David L Pritchard

US Patent:

20150287604, Oct 8, 2015

Filed:

Apr 7, 2014

Appl. No.:

14/246197

Inventors:

- Grand Cayman, KY
Lei YUAN - Cupertino CA, US
Lixia LEI - Clifton Park NY, US
David PRITCHARD - Glenville NY, US
Tuhin Guha NEOGI - Clifton Park NY, US

Assignee:

GLOBALFOUNDRIES INC. - Grand Cayman

International Classification:

H01L 21/28

Abstract:

A method is provided for fabricating cross-coupled line segments on a wafer for use, for instance, in fabricating cross-coupled gates of two or more transistors. The fabricating includes: patterning a first line segment with a first side projection using a first mask; and patterning a second line segment with a second side projection using a second mask. The second line segment is offset from the first line segment, and the patterned second side projection overlies the patterned first side projection, and facilitates defining a cross-stitch segment connecting the first and second line segments. The method further includes selectively cutting the first and second line segments in defining the cross-coupled line segments from the first and second line segments and the cross-stitch segment.