David J Randolph

US Patent:

20220190179, Jun 16, 2022

Filed:

Dec 6, 2021

Appl. No.:

17/543438

Inventors:

- San Jose CA, US
David Aaron Randolph Barkhouse - Oakland CA, US
Douglas Rose - Vista CA, US
Lewis Abra - San Francisco CA, US

International Classification:

H01L 31/05
H01L 31/02
H01L 31/18

Abstract:

Wire-based metallization and stringing techniques for solar cells, and the resulting solar cells, modules, and equipment, are described. In an example, a substrate has a surface. A plurality of N-type and P-type semiconductor regions is disposed in or above the surface of the substrate. A conductive contact structure is disposed on the plurality of N-type and P-type semiconductor regions. The conductive contact structure includes a plurality of conductive wires, each conductive wire of the plurality of conductive wires essentially continuously bonded directly to a corresponding one of the N-type and P-type semiconductor regions.

US Patent:

20190305167, Oct 3, 2019

Filed:

Mar 29, 2019

Appl. No.:

16/370422

Inventors:

- San Jose CA, US
David Aaron Randolph Barkhouse - Oakland CA, US
Douglas Rose - Vista CA, US
Lewis Abra - San Francisco CA, US

International Classification:

H01L 31/05
H01L 31/18
H01L 31/02

Abstract:

Wire-based metallization and stringing techniques for solar cells, and the resulting solar cells, modules, and equipment, are described. In an example, a substrate has a surface. A plurality of N-type and P-type semiconductor regions is disposed in or above the surface of the substrate. A conductive contact structure is disposed on the plurality of N-type and P-type semiconductor regions. The conductive contact structure includes a plurality of conductive wires, each conductive wire of the plurality of conductive wires essentially continuously bonded directly to a corresponding one of the N-type and P-type semiconductor regions.

US Patent:

20160276505, Sep 22, 2016

Filed:

May 26, 2016

Appl. No.:

15/166004

Inventors:

- Armonk NY, US
David Aaron Randolph Barkhouse - Oakland CA, US
David Brian Mitzi - Hillsborough NC, US
Teodor Krassimirov Todorov - Yorktown Heights NY, US

International Classification:

H01L 31/032
H01L 31/073
H01L 31/0224

Abstract:

Techniques for fabrication of kesterite Cu—Zn—Sn—(Se,S) films and improved photovoltaic devices based on these films are provided. In one aspect, a method of fabricating a kesterite film having a formula CuZnSn(SSe), wherein 0≦x≦1; 0≦y≦1; 0≦z≦1; and −1≦q≦1 is provided. The method includes the following steps. A substrate is provided. A bulk precursor layer is formed on the substrate, the bulk precursor layer comprising Cu, Zn, Sn and at least one of S and Se. A capping layer is formed on the bulk precursor layer, the capping layer comprising at least one of Sn, S and Se. The bulk precursor layer and the capping layer are annealed under conditions sufficient to produce the kesterite film having values of x, y, z and q for any given part of the film that deviate from average values of x, y, z and q throughout the film by less than 20 percent.