Steven D. Theiss - Woodbury MN, US David H. Redinger - Oakdale MN, US
Assignee:
3M Innovative Properties Company - St. Paul MN
International Classification:
H01L 29/22 H01L 21/44 H01L 21/36
US Classification:
257 43, 257E21476, 257E21461, 257E29095, 438104
Abstract:
A plasma hydrogenated region in the dielectric layer of a semiconductor thin film transistor (TFT) structure improves the stability of the TFT. The TFT is a multilayer structure including an electrode, a dielectric layer disposed on the electrode, and a metal oxide semiconductor on the dielectric. Exposure of the dielectric layer to a hydrogen containing plasma prior to deposition of the semiconductor produces a plasma hydrogenated region at the semiconductor-dielectric interface. The plasma hydrogenated region incorporates hydrogen which decreases in concentration from semiconductor/dielectric interface into the bulk of one or both of the dielectric layer and the semiconductor layer.
Silylethynyl Pentacene Compounds And Compositions And Methods Of Making And Using The Same
Gregg Alexander Caldwell - Cottage Grove MN, US Robert Steven Clough - Saint Paul MN, US James Craig Novack - Hudson WI, US David Howard Redinger - Oakdale MN, US Dennis Edward Vogel - Lake Elmo MN, US John E. Anthony - Lexington KY, US Marcia M. Payne - Lexington KY, US
International Classification:
H01B 1/12 C07F 7/08 C07D 493/04
US Classification:
252500, 556431, 549456
Abstract:
Silylethynyl pentacenes and compositions containing silylethynyl pentacenes are disclosed. Exemplary pentacene compounds have 6,13-silylethynyl substitution with one or more groups (e.g., R, R′ and R″) covalently bonded to each Si atom of the silylethynyl groups. Methods of making and using silylethynyl pentacenes and compositions containing silylethynyl pentacenes are also disclosed. Substrates and devices comprising the silylethynyl pentacenes and compositions are also disclosed.
Mixed Solvent Systems For Deposition Of Organic Semiconductors
Robert S. Clough - St. Paul MN, US David H. Redinger - Oakdale MN, US James C. Novack - Hudson WI, US
International Classification:
H01L 51/30 H01B 1/12
US Classification:
438 99, 252500, 257E51027
Abstract:
Compositions that contain an organic semiconductor dissolved in a solvent mixture are described. More specifically, the solvent mixture includes an alkane having 9 to 16 carbon atoms in an amount equal to 1 to 20 weight percent and an aromatic compound in an amount equal to 80 to 99 weight percent. The semiconductor material is dissolved in the solvent mixture in an amount equal to at least 0.1 weight percent based on a total weight of the composition. Methods of making a semiconductor device using the compositions to form a semiconductor layer are also described.
David H. Redinger - Afton MN, US Robert J. DeVoe - Mahtomedi MN, US
Assignee:
3M Innovative Properties Company - St. Paul MN
International Classification:
G03F 7/004 G03F 7/20
US Classification:
4302851, 430325
Abstract:
Compositions such as photoresists and microfabrication processes are provided that can produce high-fidelity microfabricated structures. The provided photoresists can have reduced swelling during the development phase and can give tight tolerances for products, such as microneedles, that can be used, for example, in the medical field. The provided compositions include a photoresist, a photoinitiator system dispersed in the photoresist, and a polymer-tethered nanoparticle dispersed in the photoresist. The photoresist can be a negative photoresist and the photoinitiator system can include a two-photoinitiator system. The polymer-tethered nanoparticle can include an acrylic polymer and, in some embodiments, can include poly(methyl methacrylate). The nanoparticles can include silica.
Temperature-Corrected Control Data For Verifying Of Structural Integrity Of Materials
- St. Paul MN, US Vaughn G. Amann - Austin TX, US Lars Schrix - Duisburg, DE Jens Weichold - Erkelenz, DE Anne-Maud B. Laprais - Paris, FR David H. Redinger - Afton MN, US Ronald D. Jesme - Plymouth MN, US David J. Badzinski - Blaine MN, US
International Classification:
H04Q 9/00 H04L 29/06 G05B 15/02 H04B 1/40
Abstract:
A data communication apparatus, system, and method are described. The data communication system comprises a transceiver disposed on an entrance port to an enclosure, such as an underground enclosure. The transceiver includes a housing, the housing mountable to the entrance port, wherein the transceiver is configured to communicate with a network outside of the underground enclosure. The data communication system also includes a monitoring device disposed in the underground enclosure that provides data related to a real-time condition within the underground enclosure. The data communication system also includes a sensor analytics unit to process the data from the monitoring device/sensor and generate a processed data signal and to communicate the processed data signal to the transceiver.
- St. Paul MN, US Subhalakshmi M. Falknor - Woodbury MN, US David H. Redinger - Afton MN, US
International Classification:
G01N 27/20 F41H 5/02 G06F 11/10 G11C 7/10
Abstract:
An armor piece may include a tested material. The armor piece also may include a plurality of electrical contacts distributed about and electrically connected to the tested material. The armor piece further may include a non-volatile memory (NVM) device. The NVM device may be hardened against exposure to x-ray radiation. The NVM device may be configured to store control voltages associated with respective electrical contacts of the plurality of electrical contacts.
Temperature-Corrected Control Data For Verifying Of Structural Integrity Of Materials
- St. Paul MN, US David H. Redinger - Afton MN, US
International Classification:
G01N 27/20
Abstract:
The disclosure describes techniques for detecting a crack or defect in a material. A computing device may determine whether a tested material includes a crack or other defect based on a temperature-scaled control data set and a measurement data set.