Dawei Zheng from Los Angeles, CA

At Sifotonics Technologies, Inc

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Location:

Greater Los Angeles Area

Industry:

Semiconductors

Vice President Of Silicon Photonics

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Location:

116 Cutlass, Irvine, CA

Industry:

Semiconductors

Work:

Litecrown Consulting - Greater Los Angeles Area since Jun 2011
Owner
SiFotonics Technologies, Inc Oct 2009 - Jun 2011
Director of product development
Kotura, Inc. Jan 2001 - Jan 2010
Group leader and Principal device engineer
lightcross 2001 - 2004
senior process integration engineer
Intel Jan 2000 - Jan 2001
Senior process engineer

Education:

University of California, Los Angeles 1995 - 1999
Ph.D, Electronic materials Fudan University 1986 - 1990
Bachelor of Science, Microelectronics Engineering

Skills:

Research Project Management
Supervisory Skills
Device Physics
Afm
Sem
Auger
Sims
Semiconductors
Cmos
Characterization
Electronics
Failure Analysis
Manufacturing
Photonics

Interests:

Qigong and Internal Medicine
Chinese Kungfu

Languages:

English
Mandarin

Software Development Engineer

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Location:

Los Angeles, CA

Work:

Software Development Engineer

Principal Device Engineer At Kotura, Inc.

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Location:

Greater Los Angeles Area

Industry:

Telecommunications

Dawei Zheng

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Specialties:

Family Medicine, Acupuncturist

Work:

Dawei Zheng MD
4635 Freeport Blvd STE D, Sacramento, CA 95822
(916)4579879 (phone), (916)4574945 (fax)

Dawei Zheng MD
8701 Ctr Pkwy STE 170, Sacramento, CA 95823
(916)8961682 (phone), (916)4574945 (fax)

Education:

Medical School
Shandong Med Univ, Jinan, Shandong, China (242 46 Prior 1 1 71)
Graduated: 1983

Procedures:

Acupuncture
Allergen Immunotherapy
Arthrocentesis
Continuous EKG
Destruction of Benign/Premalignant Skin Lesions
Electrocardiogram (EKG or ECG)
Hearing Evaluation
Inner Ear Tests
Nutrition Therapy
Pulmonary Function Tests
Skin Tags Removal
Vaccine Administration

Conditions:

Abdominal Hernia
Abnormal Vaginal Bleeding
Acne
Acute Bronchitis
Acute Conjunctivitis

Languages:

Chinese
English
Russian
Spanish

Description:

Dr. Zheng graduated from the Shandong Med Univ, Jinan, Shandong, China (242 46 Prior 1 1 71) in 1983. He works in Sacramento, CA and 1 other location and specializes in Family Medicine and Acupuncturist. Dr. Zheng is affiliated with Sutter Auburn Faith Hospital and Sutter Medical Center Sacramento.

Us Patents

Optical Component Having Waveguides Extending From A Common Region
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US Patent:

6921490, Jul 26, 2005
Filed:

Sep 6, 2002
Appl. No.:

10/236505
Inventors:

Wei Qian - Torrance CA, US
Dazeng Feng - Arcadia CA, US
Dawei Zheng - Los Angeles CA, US
Joan Yiqiong Fong - San Marino CA, US
Zhian Shao - Torrance CA, US
Xiaoming Yin - Pasadena CA, US
Assignee:

Kotura, Inc. - Monterey Park CA
International Classification:

B29D011/00
US Classification:

216 24
Abstract:

A method of forming an optical component includes forming a first mask on an optical component precursor. The first mask is formed with a plurality of waveguide portions extending from a common portion. Each waveguide portion is positioned so as to protect a waveguide region of the optical component precursor where a waveguide is to be formed. The method also includes forming a second mask between waveguide portions of the first mask. The resistance of the second mask to etching varies along at least one dimension of the second mask.

Controlled Selectivity Etch For Use With Optical Component Fabrication
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US Patent:

7005247, Feb 28, 2006
Filed:

Jan 15, 2003
Appl. No.:

10/345709
Inventors:

Joan Fong - San Marino CA, US
Wei Qian - Torrance CA, US
Dawei Zheng - San Gabriel CA, US
Zhian Shao - Torrance CA, US
Xiaoming Yin - Irvine CA, US
Assignee:

Kotusa, Inc. - Monterey Park CA
International Classification:

G03F 7/26
US Classification:

430321, 430323, 216 24, 216 72
Abstract:

A method of fabricating an optical component includes forming a mask on an optical component precursor. The method also includes etching through at least a portion of the mask so as to etch an underlying medium concurrently with remaining mask and transfer a feature of an upper surface of the mask onto an upper surface of the underlying medium. The etch can be configured such that a ratio of the underlying medium etch rate to the mask etch rate is less than about 1. 5:1. In some instances, the underlying medium is silicon and the mask is a photoresist.

High Speed Optical Phase Modulator
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US Patent:

7394948, Jul 1, 2008
Filed:

Jun 7, 2005
Appl. No.:

11/146898
Inventors:

Dawei Zheng - Alhambra CA, US
Dazeng Feng - Arcadia CA, US
Anthony Kewitsch - Santa Monica CA, US
George Rakuljic - Santa Monica CA, US
Assignee:

Kotura, Inc. - Monterey Park CA
International Classification:

G02F 1/035
G02B 6/26
G02B 6/42
US Classification:

385 3, 385 2, 385 40
Abstract:

An optical device includes a phase modulator having a waveguide on a substrate. The phase modulator also includes an n-type region having a proximity to a p-type region that causes formation of a depletion region when a bias is not applied to the modulator. The depletion region is at least partially positioned in the light signal carrying region of the waveguide. The phase modulator is tuned by applying a reverse bias to the phase modulator. The reverse bias changes the size of the depletion region.

High Speed Optical Intensity Modulator
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US Patent:

7394949, Jul 1, 2008
Filed:

Jun 7, 2005
Appl. No.:

11/147403
Inventors:

Dazeng Feng - Arcadia CA, US
Dawei Zheng - Alhambra CA, US
Anthony Kewitsch - Santa Monica CA, US
George Rakuljic - Santa Monica CA, US
Assignee:

Kotura, Inc. - Monterey Park CA
International Classification:

G02F 1/035
G02B 6/26
G02B 6/42
US Classification:

385 3, 385 2, 385 40
Abstract:

An optical device includes a phase modulator positioned along a branch waveguide of a mach-zehnder interferometer. The phase modulator includes an n-type region having a proximity to a p-type region that causes a depletion region to form when a bias is not applied to the modulator. The depletion region is at least partially positioned in a light signal carrying region of the waveguide.

High Speed Optical Phase Modulator
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US Patent:

7542630, Jun 2, 2009
Filed:

May 21, 2008
Appl. No.:

12/154435
Inventors:

Dawei Zheng - Alhambra CA, US
Dazeng Feng - Arcadia CA, US
Anthony Kewitsch - Santa Monica CA, US
George Rakuljic - Santa Monica CA, US
Assignee:

Kotura, Inc. - Monterey Park CA
International Classification:

G02F 1/35
G02B 6/26
G02B 6/42
US Classification:

385 3, 385 2, 385 40
Abstract:

An optical device includes a phase modulator having a waveguide on a substrate. The phase modulator also includes an n-type region having a proximity to a p-type region that causes formation of a depletion region when a bias is not applied to the modulator. The depletion region is at least partially positioned in the light signal carrying region of the waveguide. The phase modulator is tuned by applying a reverse bias to the phase modulator. The reverse bias changes the size of the depletion region.

System Having Reduced Distance Between Scintillator And Light Sensor Array
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US Patent:

7659519, Feb 9, 2010
Filed:

Jun 4, 2008
Appl. No.:

12/156784
Inventors:

Dawei Zheng - Arcadia CA, US
Xavier Clairardin - Naperville IL, US
Arlon Martin - Santa Barbara CA, US
Assignee:

Kotura, Inc. - Monterey Park CA
International Classification:

G01T 1/20
US Classification:

25037011
Abstract:

A sensor includes a carrier carrying a light sensor array. The light sensor array has pixels that are each configured to generate an electrical output in response to receiving a light photon. The light sensor array can be included in or on a wafer or can be built in or on a wafer. The sensor also includes electrical conductors through which the pixels electrically communicate with electronics on the carrier. Each of the electrical conductors is at least partially positioned in a recess that extends into the wafer.

Detector Having Tuned Resistors
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US Patent:

8053722, Nov 8, 2011
Filed:

Sep 5, 2007
Appl. No.:

11/899402
Inventors:

Mehdi Asghari - San Marino CA, US
Dawei Zheng - Arcadia CA, US
Assignee:

Kotura, Inc. - Monterey Park CA
International Classification:

G01T 1/17
US Classification:

2502521
Abstract:

A method of forming a light sensor array includes tuning a resistance level of a plurality of resistors. The resistors are included in a light sensor array for use with a positron emissision tomography (PET) scanner system. The light sensor array includes detection circuits that each includes one of the resistors connected in series with an avalanche photodiode.

Optical Device Having Partially Butt-Coupled Light Sensor
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US Patent:

8476576, Jul 2, 2013
Filed:

Apr 28, 2010
Appl. No.:

12/799633
Inventors:

Po Dong - Arcadia CA, US
Dazeng Feng - Arcadia CA, US
Ning-Ning Feng - Arcadia CA, US
Dawei Zheng - Arcadia CA, US
Mehdi Asghari - San Marino CA, US
Assignee:

Kotura, Inc. - Monterey Park CA
International Classification:

G02B 6/26
US Classification:

25022724, 25022711, 250216, 385 8, 385 15
Abstract:

An optical device includes a light-transmitting medium positioned on a base. The light-transmitting medium defines a waveguide. The optical device also includes a light sensor. The light sensor includes a light-absorbing medium positioned on the base. A portion of the waveguide ends at a facet such that a first portion of a light signal being guided by the wavegide passes through the facet and a second portion of the light signal bypasses the facet and remains in the light-transmitting medium. The light-absorbing medium is positioned on the light-transmitting medium such that the light-transmitting medium is between the light-absorbing medium and the base. Additionally, the light-absorbing medium is positioned on the light-transmitting medium such that the light-absorbing medium receives the first portion of the light signal that passes through the facet. Further, the light-absorbing medium is configured such that the second portion of the light signal is coupled into the light-absorbing medium from the light-transmitting medium.