Diane L Freeman

US Patent:

6428135, Aug 6, 2002

Filed:

Oct 5, 2000

Appl. No.:

09/679761

Inventors:

Anthony R. Lubinsky - Webster NY
Diane C. Freeman - Pittsford NY
Simon D. Yandila - Rochester NY

Assignee:

Eastman Kodak Company - Rochester NY

International Classification:

B41J 2938

US Classification:

347 11, 347 8

Abstract:

An inkjet printing apparatus and method of operating an inkjet printhead provides an inkjet orifice of the printhead that is located within a predetermined spacing of less than 1000 micrometers, and more preferably in a range of 50 to less than 500 micrometers for printing high resolution images. Electrical drive signals are provided to the printhead, the drive signals being adapted to enable the printhead to generate a droplet. In response to the drive signals, a free droplet is formed between the orifice and a receiver member and deposits a droplet upon the receiver member substantially without presence of any satellites.

US Patent:

6450602, Sep 17, 2002

Filed:

Oct 5, 2000

Appl. No.:

09/679931

Inventors:

Anthony R. Lubinsky - Webster NY
Diane C. Freeman - Pittsford NY
Simon D. Yandila - Rochester NY

Assignee:

Eastman Kodak Company - Rochester NY

International Classification:

B41J 2938

US Classification:

347 9, 347 8, 347 10

Abstract:

An inkjet printing apparatus and method of operating an inkjet printhead provides an inkjet orifice of the printhead that is located within a predetermined spacing of less than 1000 micrometers, and more preferably in a range of 50-500 micrometers for printing high resolution images. Electrical drive signals are provided to the printhead, the drive signals being adapted to enable the printhead to generate a droplet. In response to the drive signals, a free spherical droplet is formed between the orifice and a receiver member and deposits a droplet upon the receiver member substantially without presence of an attached or detached ligament of printing liquid that would otherwise provide an artifact mark on the receiver member.

US Patent:

7198977, Apr 3, 2007

Filed:

Dec 21, 2004

Appl. No.:

11/021739

Inventors:

Deepak Shukla - Webster NY, US
Diane C. Freeman - Pittsford NY, US
Shelby F. Nelson - Pittsford NY, US

Assignee:

Eastman Kodak Company - Rochester NY

International Classification:

H01L 51/40

US Classification:

438 99, 257E51005

Abstract:

A thin film transistor comprises a layer of organic semiconductor material comprising a tetracarboxylic diimide 3,4,9,10-perylene-based compound having, attached to each of the imide nitrogen atoms a substituted or unsubsitituted phenylalkyl group. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating an organic thin-film transistor device, preferably by sublimation or solution-phase deposition onto a substrate, wherein the substrate temperature is no more than 100 C.

US Patent:

7326956, Feb 5, 2008

Filed:

Dec 17, 2004

Appl. No.:

11/015897

Inventors:

Deepak Shukla - Webster NY, US
Diane C. Freeman - Pittsford NY, US
Shelby F. Nelson - Pittsford NY, US

Assignee:

Eastman Kodak Company - Rochester NY

International Classification:

H01L 29/08
H01L 35/24
H01L 51/00

US Classification:

257 40, 257E51005

Abstract:

A thin film transistor comprises a layer of organic semiconductor material comprising a tetracarboxylic diimide 3,4,9,10-perylene-based compound having, attached to each of the imide nitrogen atoms a carbocyclic or heterocyclic aromatic ring system substituted with one or more fluorine-containing groups. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating ac thin film transistor device, preferably by sublimation or solution-phase deposition onto a substrate, wherein the substrate temperature is no more than 100 C.

US Patent:

7422777, Sep 9, 2008

Filed:

Nov 22, 2005

Appl. No.:

11/285238

Inventors:

Deepak Shukla - Webster NY, US
Diane C. Freeman - Pittsford NY, US
Shelby F. Nelson - Pittsford NY, US
Jeffrey T. Carey - Victor NY, US
Wendy G. Ahearn - Rochester NY, US

Assignee:

Eastman Kodak Company - Rochester NY

International Classification:

C09K 19/00
G03C 5/00
B32B 27/00
H01L 29/08
H01L 21/322

US Classification:

428 11, 4284735, 438 99, 257 40, 257E51, 430311, 430 20, 430321

Abstract:

A thin film transistor comprises a layer of organic semiconductor material comprising a tetracarboxylic diimide naphthalene-based compound having, attached to each of the imide nitrogen atoms, a substituted or unsubstituted alicyclic ring system, optionally substituted with electron donating groups. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating an organic thin-film transistor device, preferably by sublimation deposition onto a substrate, wherein the substrate temperature is no more than 100 C.

US Patent:

7579619, Aug 25, 2009

Filed:

Apr 20, 2005

Appl. No.:

11/110076

Inventors:

Deepak Shukla - Webster NY, US
Shelby F. Nelson - Pittsford NY, US
Diane C. Freeman - Pittsford NY, US

Assignee:

Eastman Kodak Company - Rochester NY

International Classification:

H01L 35/24

US Classification:

257 40, 257E51005, 257E51006, 257E5105

Abstract:

A thin film transistor comprises a layer of organic semiconductor material comprising a tetracarboxylic diimide naphthalene-based compound having, attached to each of the imide nitrogen atoms, a substituted or unsubstituted arylalkyl moiety. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating an organic thin-film transistor device, preferably by sublimation deposition onto a substrate, wherein the substrate temperature is no more than 100 C.

US Patent:

7629605, Dec 8, 2009

Filed:

Oct 31, 2005

Appl. No.:

11/263111

Inventors:

Deepak Shukla - Webster NY, US
Diane C. Freeman - Pittsford NY, US
Shelby F. Nelson - Pittsford NY, US
Jeffrey T. Carey - Victor NY, US
Wendy G. Ahearn - Rochester NY, US

Assignee:

Eastman Kodak Company - Rochester NY

International Classification:

H01L 51/00
C07D 471/02

US Classification:

257 40, 546 66, 438 17, 438 99

Abstract:

A thin film transistor comprises a layer of organic semiconductor material comprising a tetracarboxylic diimide naphthalene-based compound having, attached to each of the imide nitrogen atoms, an aromatic moiety, at least one of which moieties is substituted with at least one electron donating group. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating an organic thin-film transistor device, preferably by sublimation deposition onto a substrate, wherein the substrate temperature is no more than 100 C.

US Patent:

7745821, Jun 29, 2010

Filed:

May 15, 2007

Appl. No.:

11/748622

Inventors:

Shiying Zheng - Webster NY, US
Deepak Shukla - Webster NY, US
Diane C. Freeman - Pittsford NY, US

Assignee:

Eastman Kodak Company - Rochester NY

International Classification:

H01L 35/24
H01L 51/00

US Classification:

257 40, 257E51001, 257E51051

Abstract:

A thin film transistor comprises a layer of organic semiconductor material comprising an organic semiconductor material that comprises an aryl dicarboxylic acid diimidazole-based compound. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating ac thin film transistor device, preferably by sublimation or solution-phase deposition onto a substrate, wherein the substrate temperature is no more than 150 C.