Dianne M Meyer

US Patent:

8309394, Nov 13, 2012

Filed:

Jan 22, 2010

Appl. No.:

12/691802

Inventors:

Deepak Shukla - Webster NY, US
Dianne M. Meyer - Hilton NY, US

Assignee:

Eastman Kodak Company - Rochester NY

International Classification:

H01L 51/40

US Classification:

438 99, 546 66, 257E51027

Abstract:

An organic semiconducting composition consists essentially of an N,N-dicycloalkyl-substituted naphthalene diimide and a polymer additive comprising an insulating or semiconducting polymer having a permittivity at 1000 Hz of at least 1. 5 and up to and including 5. This composition can be used to provide a semiconducting layer in a thin-film transistor that can be incorporated into a variety of electronic devices.

US Patent:

8314265, Nov 20, 2012

Filed:

Apr 30, 2010

Appl. No.:

12/770803

Inventors:

Deepak Shukla - Webster NY, US
Dianne M. Meyer - Hilton NY, US
Wendy G. Ahearn - Rochester NY, US

Assignee:

Eastman Kodak Company - Rochester NY

International Classification:

C07C 229/34

US Classification:

560 37, 562442

Abstract:

Novel amic acids and amic esters can be thermally converted into corresponding arylene diimides. These amic acids and amic ester can be used as precursors to prepare semiconducting thin films that can be used in various articles including thin-film transistor devices that can be incorporated into a variety of electronic devices. In this manner, the arylene diimides need not be coated out of solvent in which they may be insoluble, but they can be generated in situ from a solvent-soluble, easily coated amic acid or amic ester.

US Patent:

8404892, Mar 26, 2013

Filed:

May 27, 2010

Appl. No.:

12/788347

Inventors:

Deepak Shukla - Webster NY, US
Dianne M. Meyer - Hilton NY, US
Wendy G. Ahearn - Rochester NY, US

Assignee:

Eastman Kodak Company - Rochester NY

International Classification:

C07C 233/00
C07C 235/02

US Classification:

564156

Abstract:

Aromatic non-polymeric amic acid salts are designed to be thermally converted into corresponding arylene diimides. These aromatic, non-polymeric amic acid salts can be used to prepare semiconducting thin films that can be used in various articles including thin-film transistor devices that can be incorporated into a variety of electronic devices. In this manner, the arylene diimide need not be coated but is generated in situ from a solvent-soluble, easily coated aromatic, non-polymeric amic acid salt at relatively lower temperature because the cation portion of the amic acid salt acts as an internal catalyst.

US Patent:

8411489, Apr 2, 2013

Filed:

Apr 30, 2010

Appl. No.:

12/770795

Inventors:

Deepak Shukla - Webster NY, US
Dianne M. Meyer - Hilton NY, US
Wendy G. Ahearn - Rochester NY, US

Assignee:

Eastman Kodak Company - Rochester NY

International Classification:

G11C 11/00

US Classification:

365151, 365148, 257 40

Abstract:

An amic acid or amic ester precursor can be applied to a substrate to form a thin film, and is then thermally converted into a semiconducting layer of the corresponding arylene diimide. This semiconducting thin film can be used in various articles including thin-film transistor devices that can be incorporated into a variety of electronic devices. In this manner, the arylene diimide need not be coated onto the substrate but is generated in situ from a solvent-soluble, easily coated precursor compound.

US Patent:

8431433, Apr 30, 2013

Filed:

May 27, 2010

Appl. No.:

12/788349

Inventors:

Deepak Shukla - Webster NY, US
Dianne M. Meyer - Hilton NY, US
Wendy G. Ahearn - Rochester NY, US

Assignee:

Eastman Kodak Company - Rochester NY

International Classification:

H01L 51/40

US Classification:

438 99, 257E21242

Abstract:

A semiconductor layer and device can be provided using a method including thermally converting an aromatic, non-polymeric amic acid salt to a corresponding arylene diimide. The semiconducting thin films can be used in various articles including thin-film transistor devices that can be incorporated into a variety of electronic devices. In this manner, the arylene diimide need not be coated but is generated in situ from a solvent-soluble, easily coated aromatic, non-polymeric amic acid salt at relatively lower temperature because the cation portion of the salt acts as an internal catalyst.

US Patent:

8450726, May 28, 2013

Filed:

May 27, 2010

Appl. No.:

12/788355

Inventors:

Deepak Shukla - Webster NY, US
Dianne M. Meyer - Hilton NY, US
Wendy G. Ahearn - Rochester NY, US

Assignee:

Eastman Kodak Company - Rochester NY

International Classification:

H01L 35/24

US Classification:

257 40, 257E51001

Abstract:

An article includes a flexible or rigid substrate and dry layer comprising an aromatic, non-polymeric amic acid salt that can be thermally converted to a corresponding arylene diimide. Upon conversion of the aromatic, non-polymeric amic acid salt, the dry layer has semiconductive properties and can be used in various devices including thin-film transistor devices.

US Patent:

8530270, Sep 10, 2013

Filed:

Apr 30, 2010

Appl. No.:

12/770798

Inventors:

Deepak Shukla - Webster NY, US
Dianne M. Meyer - Hilton NY, US
Wendy G. Ahearn - Rochester NY, US

Assignee:

Eastman Kodak Company - Rochester NY

International Classification:

H01L 51/40
H01L 21/00
C07C 229/00

US Classification:

438 99, 438149, 438161, 438151, 560 37

Abstract:

An amic acid or amic ester precursor can be applied to a substrate and thermally converted into a semiconducting layer of the corresponding arylene diimide. This semiconducting thin film can be used in various articles including thin-film transistor devices that can be incorporated into a variety of electronic devices. In this manner, the arylene diimide need not be coated but is generated in situ from a solvent-soluble, easily coated precursor compound.

US Patent:

20110180784, Jul 28, 2011

Filed:

Jan 22, 2010

Appl. No.:

12/691793

Inventors:

Deepak Shukla - Webster NY, US
Dianne M. Meyer - Hilton NY, US

International Classification:

H01L 51/00
H01B 1/12

US Classification:

257 40, 252500, 257E51005, 257E51024, 257E51002

Abstract:

An organic semiconducting composition consists essentially of an N,N-dicycloalkyl-substituted naphthalene diimide and a polymer additive comprising an insulating or semiconducting polymer having a permittivity at 1000 Hz of at least 1.5 and up to and including 5. This composition can be used to provide a semiconducting layer in a thin-film transistor that can be incorporated into a variety of electronic devices.