Dianne L Sundling

US Patent:

6917901, Jul 12, 2005

Filed:

Feb 20, 2002

Appl. No.:

10/079389

Inventors:

Vincent J. Carlos - Essex Junction VT, US
James E. Doran - Essex Junction VT, US
Stephen E. Knight - Essex Junction VT, US
Robert K. Leidy - Burlington VT, US
Keith J. Machia - Swanton VT, US
Joseph E. Shaver - South Burlington VT, US
Dianne L. Sundling - Huntington VT, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

G03C005/00

US Classification:

702189, 702155, 702170, 430 30

Abstract:

A method uses three dimensional feature metrology for implementation of critical image control and feedback of lithographic focus and x/y tilt. The method is for measuring 3 dimensional profile changes in a photo sensitive film and feeding back compensatory exposure tool focus corrections to maintain a stable lithographic process. The measured focus change from the optimal tool focus offset is monitored directly on the critical product images for both contact hole and line images. Z Focus corrections and x/y tilt corrections are fed back independently of dose to maintain critical dimension (CD) control thereby achieving improved semiconductor wafer printing. Additionally, the method can be used to diagnose problems with the focusing system by measuring the relationship between line edge width and barometric pressure.

US Patent:

6944578, Sep 13, 2005

Filed:

Jun 15, 2004

Appl. No.:

10/868411

Inventors:

Vincent J. Carlos - Essex Junction VT, US
James E. Doran - Essex Junction VT, US
Stephen E. Knight - Essex Junction VT, US
Robert K. Leidy - Burlington VT, US
Keith J. Machia - Swanton VT, US
Joseph E. Shaver - South Burlington VT, US
Dianne L. Sundling - Huntington VT, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

G03C005/00

US Classification:

702189, 702155, 702170, 430 30

Abstract:

A method uses three dimensional feature metrology for implementation of critical image control and feedback of lithographic focus and x/y tilt. The method is for measuring 3 dimensional profile changes in a photo sensitive film and feeding back compensatory exposure tool focus corrections to maintain a stable lithographic process. The measured focus change from the optimal tool focus offset is monitored directly on the critical product images for both contact hole and line images. Z Focus corrections and x/y tilt corrections are fed back independently of dose to maintain critical dimension (CD) control. Additionally, the method can be used to diagnose problems with the focusing system by measuring the relationship between line edge width and barometric pressure.

US Patent:

63034166, Oct 16, 2001

Filed:

Oct 7, 1999

Appl. No.:

9/414457

Inventors:

James A. Bruce - Williston VT
Mary C. Bushey - South Burlington VT
Premlatha J. Jagannathan - Essex Junction VT
Dianne L. Sundling - Huntington VT

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 2184

US Classification:

438166

Abstract:

The present invention is directed to a method and process to reduce plasma etch fluting during etching of a pattern on a semiconductor substrate by modifying the resist profile. The present invention forms a resist structure profile having an overhang or undercut, which is not in contact with the surface of the substrate. The overhang results in a shadowed region on the substrate from the primary etch direction adjacent to the base of the resist structure. Since the overhang is not in direct contact with the substrate surface, the resist pattern does not transfer into the surface of the substrate during etching and fluting is reduced or eliminated.