Don F Kendall

US Patent:

40657426, Dec 27, 1977

Filed:

Jun 23, 1975

Appl. No.:

5/589731

Inventors:

Don Leslie Kendall - Richardson TX
Millard Monroe Judy - Dallas TX

Assignee:

Texas Instruments Incorporated - Dallas TX

International Classification:

H01C 706
H01L 2702
H01L 2906

US Classification:

338 9

Abstract:

Disclosed is a method for providing electronic semiconductor devices and the devices produced thereby utilizing an orientation dependent etch to selectively provide grooves in a monocrystalline silicon substrate having a crystal orientation of (110). By selectively etching with an orientation dependent etch to provide deep grooves having substantially parallel sidewalls and thereafter refilling with an appropriate material of the appropriate conductivity, a plurality of semiconductor electronic devices are provided.

US Patent:

39367894, Feb 3, 1976

Filed:

Jun 3, 1974

Appl. No.:

5/475712

Inventors:

Walter T. Matzen - Richardson TX
Don L. Kendall - Richardson TX

Assignee:

Texas Instruments Incorporated - Dallas TX

International Classification:

H01C 704

US Classification:

338 22SD

Abstract:

A spreading-resistance silicon thermistor having high-precision values of resistance and temperature coefficient of resistance (TCR) is produced by a high-volume, low-cost, photolithographic technique, wherein multiple thin-film contacts are tested and selectively trimmed to permit computerized control of precision resistance values in a production-line operation.

US Patent:

39627136, Jun 8, 1976

Filed:

Oct 25, 1973

Appl. No.:

5/409509

Inventors:

Don L. Kendall - Richardson TX
Walter T. Matzen - Richardson TX

Assignee:

Texas Instruments Incorporated - Dallas TX

International Classification:

H01L 2993

US Classification:

357 14

Abstract:

Disclosed is a semiconductor capacitor which utilizes the volume of the semiconductor substrate in which it is formed to create increased surface area and thereby to provide increased capacitance. The surface area is increased by forming selectively spaced grooves in the surface of the semiconductor substrate and utilizing the sidewalls of the grooves as surface. A thin layer of dielectric is formed over the increased surface area, and thereafter a metal layer is formed over the dielectric layer to provide a dielectric capacitor. An active junction P-N capacitor may be formed instead of a dielectric capacitor by forming a P-N junction comprising the increased surface area, and thereover forming the metallized contact.

US Patent:

40178854, Apr 12, 1977

Filed:

Dec 13, 1974

Appl. No.:

5/532334

Inventors:

Don L. Kendall - Richardson TX
Walter T. Matzen - Richardson TX

Assignee:

Texas Instruments Incorporated - Dallas TX

International Classification:

H01L 2704
H01L 2904
H01L 2992

US Classification:

357 51

Abstract:

Disclosed is a semiconductor capacitor which utilizes the volume of the semiconductor substrate in which it is formed to create increased surface area and thereby to provide increased capacitance. The surface area is increased by forming selectively spaced grooves in the surface of the semiconductor substrate by orientation dependent etches and utilizing the sidewalls of the grooves as surface. Groove depth is limited to a predetermined value by etching time, geometrical constraints, or by etch stops. This provides for precise control of capacitance values on a batch or commercial basis. Increases up to at least 100-fold in capacitance as compared to a flat capacitor structure as possible. A thin layer of dielectric is formed over the increased surface area, and thereafter a conducting layer is formed over the dielectric layer to provide a dielectric capacitor. An active junction P-N capacitor may also be formed.

US Patent:

39697460, Jul 13, 1976

Filed:

Dec 10, 1973

Appl. No.:

5/423630

Inventors:

Don Leslie Kendall - Richardson TX
Francois Antoine Padovani - Dallas TX
Kenneth Elwood Bean - Richardson TX
Walter Theodore Matzen - Richardson TX

Assignee:

Texas Instruments Incorporated - Dallas TX

International Classification:

H01L 2904
H01L 3106
H01L 2120
H01L 21308

US Classification:

357 30

Abstract:

Disclosed is a method of fabricating a vertical multi-junction cell and the solar cell produced thereby, utilizing an orientation dependent etch to selectively provide parallel grooves in monocrystalline silicon body, followed by the introduction of doping impurities of the opposite conductivity type from the silicon body to provide PN junctions. In some instances the grooves are filled with silicon of the same conductivity type as the silicon body.

US Patent:

39363295, Feb 3, 1976

Filed:

Feb 3, 1975

Appl. No.:

5/546378

Inventors:

Don Leslie Kendall - Richardson TX
John C. Knowles - Dallas TX

Assignee:

Texas Instruments Incorporated - Dallas TX

International Classification:

H01L 2120

US Classification:

148187

Abstract:

The disclosure relates to the formation of very thin silicon slices, 1/10 of a mil, and the mechanical strengthening of such thin silicon slices and to the formation of electronic circuitry in such slices and the use thereof. These slices are formed, in accordance with one embodiment of the invention, by etching grooves in an n+ wafer using an orientation dependent etch and etching along the {111} plane in {110} n+ wafers. After oxide removal, the surface of the wafer opposite the grooves is epitaxially coated with n-type silicon and the original grooves are then further etched by an electrolytic etch or by a concentration dependent etch which will remove only the n+ material, thereby leaving the thin wafer with a honeycomb-like supporting structure with struts in the shapes of parallelograms, diamonds and the like. The thin slice can be used to purify electron beams since, for given energies, only ions passing in the direction of the lattice structure or along the channel will completely pass through the slice, the other ions being stopped by collisions with the atoms of the silicon slice. The slice can also be used as a channel multiplier since light impinging on the slice will generate electrons which will pass between struts or honeycomb-like members and gradually pick up additional electrons by secondary emission.