Don Leslie Kendall

age ~94

from Albuquerque, NM

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Strongly Textured Atomic Ridge And Dot Fabrication
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US Patent:

6413880, Jul 2, 2002
Filed:

Sep 8, 2000
Appl. No.:

09/657533
Inventors:

Alison Baski - Midlothian VA
Don Kendall - Albuquerque NM
Assignee:

StarMega Corporation - Alburquerque NM
Virginia Commonwealth University - Richmond VA
International Classification:

H01L 2131
US Classification:

438759, 438650, 438666, 438 2, 438800, 257 9, 257 23
Abstract:

The present invention provides a method for producing atomic ridges on a substrate comprising: depositing a first metal on a substrate; heating the substrate to form initial nanowires of the first metal on the substrate; depositing a second metal on the initial nanowires of the first metal to form thickened nanowires that are more resistant to etching than the initial nanowires; and etching the substrate to form atomic ridges separated by grooves having a pitch of 0. 94 to 5. 35 nm. The present invention also provides a method for forming Au and other metal nanowires that may be used for electrical conductors and both positive and negative etch masks to form a plurality of ridges at a pitch of 0. 94 to 5. 35 nm containing at least two adjacent grooves with widths of 0. 63 to 5. 04 nm.

Strongly Textured Atomic Ridges And Tip Arrays
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US Patent:

6465782, Oct 15, 2002
Filed:

Sep 8, 2000
Appl. No.:

09/658878
Inventors:

Don L. Kendall - Albuquerque NM
Assignee:

StarMega Corporation - Albuquerque NM
International Classification:

G01N 2300
US Classification:

250306
Abstract:

The present invention provides a multi-tip array device comprising: a substrate; a multi-tip array of atomic tips on the substrate, the multi-tip array having a pitch of 0. 94 to 5. 4 nm between adjacent tips in at least one direction; and means for moving the substrate. The present invention also provides an atomic claw comprising: a mounting block; a paddle having a multi-tip array thereon, the multi-tip array having a pitch of 0. 94 to 5. 4 nm between adjacent tips in at least one direction; and a cantilever connected to the paddle and the mounting block, wherein the cantilever allows the paddle to be moved in at least one arcuate direction.

Strongly Textured Atomic Ridge And Dot Mosfets, Sensors And Filters
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US Patent:

6509619, Jan 21, 2003
Filed:

Sep 8, 2000
Appl. No.:

09/658599
Inventors:

Don Kendall - Albuquerque NM
Mark J. Guttag - Alexandria VA
Assignee:

StarMega Corporation - Albuquerque NM
International Classification:

H01L 2714
US Classification:

257414, 428613
Abstract:

The present invention provides a MOSFET device comprising: a substrate including a plurality of atomic ridges, each of the atomic ridges including a semiconductor layer comprising Si and an dielectric layer comprising a Si compound; a plurality nanogrooves between the atomic ridges; at least one elongated molecule located in at least one of the nanogrooves; a porous gate layer located on top of the plurality of atomic ridges. The present invention also provides a membrane comprising: a substrate; and a plurality of nanowindows in the substrate and a method for forming nanowindows in a substrate.

Quantum Ridges And Tips
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US Patent:

6667492, Dec 23, 2003
Filed:

Nov 9, 1998
Appl. No.:

09/187730
Inventors:

Don L. Kendall - Albuquerque NM 87123
Assignee:

Don L. Kendall - Albuquerque NM
International Classification:

H01L 2915
US Classification:

257 30, 257 12, 257622, 257628, 438962
Abstract:

The present invention provides a quantum structure product comprising a substrate having quantum ridges and quantum tips on at least one surface thereof. In some embodiments of the invention quantum ridges may support quantum wires and the quantum tips may support quantum dots. Grooves which separate the quantum ridges and quantum tips from each other may be shallow or deep, and may contain organic molecules, fullerene tubes, and fullerene balls.

Strongly Textured Atomic Ridge And Dot Mosfets, Sensors And Filters
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US Patent:

7019324, Mar 28, 2006
Filed:

Oct 10, 2002
Appl. No.:

10/267665
Inventors:

Don Kendall - Albuquerque NM, US
Assignee:

Starmega Corporation - Albuquerque NM
International Classification:

H01L 29/06
US Classification:

257 14, 257 24
Abstract:

The present invention provides a MOSFET device comprising: a substrate including a plurality of atomic ridges, each of the atomic ridges including a semiconductor layer comprising Si and an dielectric layer comprising a Si compound; a plurality nanogrooves between the atomic ridges; at least one elongated molecule located in at least one of the nanogrooves; a porous gate layer located on top of the plurality of atomic ridges. The present invention also provides a membrane comprising: a substrate; and a plurality of nanowindows in the substrate and a method for forming nanowindows in a substrate.

Strongly Textured Atomic Ridge Nanowindows
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US Patent:

7259099, Aug 21, 2007
Filed:

Sep 15, 2005
Appl. No.:

11/226382
Inventors:

Don L. Kendall - Albuquerque NM, US
Mark J. Guttag - Alexandria VA, US
Assignee:

Starmega Corporation - Albuquerque NM
International Classification:

H01L 21/311
US Classification:

438700, 977882, 977888, 438690
Abstract:

The present invention provides a MOSFET device comprising: a substrate including a plurality of atomic ridges, each of the atomic ridges including a semiconductor layer comprising Si and an dielectric layer comprising a Si compound; a plurality nanogrooves between the atomic ridges; at least one elongated molecule located in at least one of the nanogrooves; a porous gate layer located on top of the plurality of atomic ridges. The present invention also provides a membrane comprising: a substrate; and a plurality of nanowindows in the substrate and a method for forming nanowindows in a substrate.

Quantum Ridges And Tips
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US Patent:

20040061103, Apr 1, 2004
Filed:

Sep 30, 2003
Appl. No.:

10/673378
Inventors:

Don Kendall - Albuquerque NM, US
International Classification:

H01L029/06
H01L039/00
US Classification:

257/030000
Abstract:

The present invention provides a quantum structure product comprising a substrate having quantum ridges and quantum tips on at least one surface thereof. In some embodiments of the invention quantum ridges may support quantum wires and the quantum tips may support quantum dots. Grooves which separate the quantum ridges and quantum tips from each other may be shallow or deep, and may contain organic molecules, fullerene tubes, and fullerene balls.

Composite Semiconductor Structures
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US Patent:

40657426, Dec 27, 1977
Filed:

Jun 23, 1975
Appl. No.:

5/589731
Inventors:

Don Leslie Kendall - Richardson TX
Millard Monroe Judy - Dallas TX
Assignee:

Texas Instruments Incorporated - Dallas TX
International Classification:

H01C 706
H01L 2702
H01L 2906
US Classification:

338 9
Abstract:

Disclosed is a method for providing electronic semiconductor devices and the devices produced thereby utilizing an orientation dependent etch to selectively provide grooves in a monocrystalline silicon substrate having a crystal orientation of (110). By selectively etching with an orientation dependent etch to provide deep grooves having substantially parallel sidewalls and thereafter refilling with an appropriate material of the appropriate conductivity, a plurality of semiconductor electronic devices are provided.