Donald R Getchell

US Patent:

20120034756, Feb 9, 2012

Filed:

Aug 6, 2010

Appl. No.:

12/851996

Inventors:

Taehun Kwon - Scarborough ME, US
Akshey Sehgal - Scarborough ME, US
Donald Robertson Getchell - York ME, US
Patrick McCarthy - Hollis Center ME, US
Rodney L. Hill - Buxton ME, US
Yaojian Leng - Scarborough ME, US

International Classification:

H01L 21/762

US Classification:

438424, 257E21546

Abstract:

A number of deep trench openings are formed in a semiconductor wafer to have substantially equal depths and no oxide undercut by forming a number of shallow trench openings, forming a mask structure in the shallow trench openings where the mask structure has a substantially planar top surface, forming a number of mask openings in the mask structure, and etching the semiconductor wafer through the mask openings to form the deep trench openings.

US Patent:

20120119262, May 17, 2012

Filed:

Nov 15, 2010

Appl. No.:

12/946305

Inventors:

Wibo Van Noort - Westbrook ME, US
Jamal Ramdani - Scarborough ME, US
Andre Labonte - Scarborough ME, US
Donald Robertson Getchell - York ME, US

International Classification:

H01L 29/73
H01L 21/331

US Classification:

257197, 438319, 257E21371, 257E29174

Abstract:

A SiGe heterojunction bipolar transistor is fabricated by etching an epitaxially-formed structure to form a mesa that has a collector region, a cap region, and a notched SiGe base region that lies in between. A protective plug is formed in the notch of the SiGe base region so that thick non-conductive regions can be formed on the sides of the collector region and the cap region. Once the non-conductive regions have been formed, the protective plug is removed. An extrinsic base is then formed to lie in the notch and touch the base region, followed by the formation of isolation regions and an emitter region.