Donald Leroy Olson

Address:

4720 Pilgrim Ln N, Minneapolis, MN 55442

VIN:

4T1FA38P67U119308

Make:

TOYOTA

Model:

CAMRY SOLARA

Year:

2007

US Patent:

52963950, Mar 22, 1994

Filed:

Mar 3, 1993

Appl. No.:

8/026528

Inventors:

Muhammad A. Khan - White Bear Lake MN
James M. VanHove - Eagan MN
Jon N. Kuznia - Fridley MN
Donald T. Olson - Circle Pines MN

Assignee:

APA Optics, Inc. - Blaine MN

International Classification:

H01L 21265

US Classification:

437 40

Abstract:

A high electron mobility transistor is disclosed, which takes advantage of the increased mobility due to a two dimensional electron gas occurring in GaN/Al. sub. x Ga. sub. 1-x N heterojunctions. These structures are deposited on basal plane sapphire using low pressure metalorganic chemical vapor deposition. The electron mobility of the heterojunction is approximately 620 cm. sup. 2 per volt second at room temperature as compared to 56 cm. sup. 2 per volt second for bulk GaN of the same thickness deposited under identical conditions. The mobility of the bulk sample peaked at 62 cm. sup. 2 per volt second at 180. degree. K. and decreased to 19 cm. sup. 2 per volt second at 77. degree. K. The mobility for the heterostructure, however, increased to a value of 1,600 cm. sup. 2 per volt second at 77. degree. K.

US Patent:

D4522931, Dec 18, 2001

Filed:

Nov 27, 2000

Appl. No.:

D/133194

Inventors:

Donald F. Olson - Andover MN

International Classification:

2205

US Classification:

D22144

US Patent:

47683112, Sep 6, 1988

Filed:

Mar 20, 1987

Appl. No.:

7/028660

Inventors:

Donald L. Olson - Minneapolis MN

Assignee:

Tennant Company - Minneapolis MN

International Classification:

B24B 718

US Classification:

51174

Abstract:

A machine and method for removing coatings and/or membranes from the surface of a floor or the like, which may be uneven, and also conditioning a floor so that it more readily acccepts a new coating. The machine takes the form of a driver member or element which may be abrasive or which may apply or work free abrasive particles against a floor with a controlled application rate that may be related to floor conditions and travel speed of the machine over the surface.

US Patent:

52784355, Jan 11, 1994

Filed:

Jun 8, 1992

Appl. No.:

7/895350

Inventors:

James M. Van Hove - Eagan MN
Jon N. Kuznia - Bloomington MN
Donald T. Olson - Roseville MN
Muhammad A. Kahn - White Bear Lake MN
Margaret C. Blasingame - Moundsview MN

Assignee:

APA Optics, Inc. - Blaine MN

International Classification:

H01L 2714

US Classification:

257184

Abstract:

The invention is an Al. sub. x Ga. sub. 1-x N ultraviolet detector with extremely high responsivity at over 200 to 365 nanometers and a very sharp long wavelength cutoff. The active layer for the sensors is a single crystal Al. sub. x Ga. sub. 1-x N preferably deposited over a basal plane sapphire substrate using a switched atomic layer epitaxy process.

US Patent:

51929872, Mar 9, 1993

Filed:

May 17, 1991

Appl. No.:

7/701792

Inventors:

Muhammed A. Khan - White Bear Lake MN
James M. VanHove - Eagan MN
Jon N. Kuznia - Fridley MN
Donald T. Olson - Circle Pines MN

Assignee:

APA Optics, Inc. - Blaine MN

International Classification:

H01L 2980

US Classification:

2571831

Abstract:

A high electron mobility transistor is disclosed, which takes advantage of the increased mobility due to a two dimensional electron gas occurring in GaN/Al. sub. x Ga. sub. 1-x N heterojunctions. These structures are deposited on basal plane sapphire using low pressure metalorganic chemical vapor deposition. The electron mobility of the heterojunction is aproximately 620 cm. sup. 2 per volt second at room temperature as compared to 56 cm. sup. 2 per volt second at 180. degree. K. and decreased to 19 cm. sup. 2 per volt second at 77. degree. K. The mobility for the heterostructure, however, increased to a value of 1,600 cm. sup. 2 per volt second at 77. degree. K. and saturated at 4. degree. K.

US Patent:

51464659, Sep 8, 1992

Filed:

Feb 1, 1991

Appl. No.:

7/649670

Inventors:

Muhammad A. Khan - White Bear Lake MN
James M. VanHove - Eagan MN
Donald T. Olson - Circle Pines MN

Assignee:

APA Optics, Inc. - Blaine MN

International Classification:

H01S 319

US Classification:

372 45

Abstract:

An improved aluminum gallium nitride material is disclosed, which permits the fabrication of improved optical devices such as laser mirrors (1, 2), as well as quantum wells and optical filters. The optical devices are constructed by depositing a buffer layer (7) of aluminum nitride onto a substrate (6), with alternating layers (10, 12, 14, etc. ) of Al. sub. x Ga. sub. 1-x N and Al. sub. y Ga. sub. 1-y N, where x and y have values of between 0 and 1. Edge emitting lasers (31), surface emitting lasers (52) and quantum wells operating in the ultraviolet region are disclosed. The method of the present invention permits the ability to deposit thin, reproducible and abrupt layers of the improved material to permit the construction of rugged, solid state devices operating at ultraviolet wavelengths.

US Patent:

53172540, May 31, 1994

Filed:

Sep 17, 1992

Appl. No.:

7/946545

Inventors:

Donald R. Olson - Shoreview MN

Assignee:

Micro Control Company - Minneapolis MN

International Classification:

G05F 324

US Classification:

323316

Abstract:

A bipolar power supply capable of selectably supplying either a positive or a negative voltage at an output terminal. The power supply comprises a first operational amplifier, a second operational amplifier, a first transistor electrically connected to a positive voltage source and a second transistor electrically connected to a negative voltage source. The first transistor is electrically connected to the first operational amplifier and the second transistor is electrically connected to the second operational amplifier so that the first and second amplifiers control the operation of the first and second transistors respectively. The inputs of the first and second operational amplifiers are electrically connected in a manner that prevents them from simultaneously providing large positive voltages at their outputs.

US Patent:

D2459949, Oct 4, 1977

Filed:

Aug 18, 1975

Appl. No.:

5/605405

Inventors:

Donald L. Olson - Minneapolis MN

Assignee:

Tennant Company - Minneapolis MN

International Classification:

D2399

US Classification:

D23162