Donald J Samuels

US Patent:

6426269, Jul 30, 2002

Filed:

Oct 21, 1999

Appl. No.:

09/422634

Inventors:

Henning Haffner - Fishkill NY
Heinz Hoenigschmid - Starnberg, DE
Donald J. Samuels - Silverthorne CO

Assignee:

International Business Machines Corporation - Armonk NY
Infineon Technologies North America Corp. - San Jose CA

International Classification:

H01L 2176

US Classification:

438401, 430403

Abstract:

A method, and a system for employing the method, for providing a modified optical proximity correction (OPC) for correcting distortions of pattern lines on a semiconductor circuit wafer. The method comprises producing a mask having one or more pattern regions, and producing the semiconductor circuit wafer from the mask. The pattern regions include one or more non-edge pattern regions located adjacent to other of the non-edge pattern regions on the mask. The pattern regions further include one or more edge pattern regions located at or near an area on the mask not having the other non-edge pattern regions. The edge pattern regions have widths calculated to minimize the variance in dimensions between one or more pattern lines on the semiconductor circuit wafer formed from them and one or more pattern lines on the semiconductor circuit wafer formed from the non-edge pattern regions. The distances between any two of the pattern regions are calculated to minimize the variance in dimensions between the one or more pattern lines formed from the edge pattern regions and the one or more pattern lines formed from the non-edge pattern regions. The above producing step includes producing the semiconductor circuit wafer from the mask having the pattern lines formed from the non-edge pattern regions and having the pattern lines formed from the edge pattern regions, where the pattern lines formed from the non-edge regions are permitted to differ in distances between them.

US Patent:

6451490, Sep 17, 2002

Filed:

Nov 8, 2000

Appl. No.:

09/709091

Inventors:

William H. Advocate - Staatsburg NY
Scott J. Bukofsky - Hopewell Junction NY
Christopher Adam Feild - Yorktown Heights NY
Donald J. Samuels - Silverthorne CO

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

G03F 900

US Classification:

430 5

Abstract:

Image shortening in a photolithographic process is substantially reduced by using sub-resolution reticle features to alter the aerial image in the shortened regions. The use of such sub-resolution reticle features is simple to implement in a design system, and allows for increased feature aspect ratio as well as overlap to other critical features.

US Patent:

6483937, Nov 19, 2002

Filed:

Jun 17, 1999

Appl. No.:

09/335093

Inventors:

Donald J. Samuels - Silverthorne CO

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

G06K 900

US Classification:

382144, 382145, 348 87

Abstract:

A computer operated process ( ) for inspecting patterns ( ) on an object ( ) includes establishing different mismatch margins for different patterns ( ). A strict margin is associated with the pattern ( ) in a critical area ( ), and a relaxed margin is associated with the pattern ( ) in a non-critical area ( ). The inspection process ( ) rejects the object ( ) as being defective if a mismatch between a pattern ( ) and its respective master pattern ( ) exceeds a corresponding mismatch margin. Therefore, the inspection process ( ) maintains a high standard for the pattern ( ) in the critical area ( ) and eases the standard for the pattern ( ) in the non-critical area ( ).

US Patent:

6777146, Aug 17, 2004

Filed:

Feb 21, 2003

Appl. No.:

10/248815

Inventors:

Donald J. Samuels - Silverthorne CO

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

G03F 900

US Classification:

430 30, 430 5, 716 19, 716 21

Abstract:

A first aspect of the present invention is a method of determining an optical proximity correction for a primary feature having sub-resolution assist features for increasing the depth of focus of the primary features, comprising: generating a line/space pair; placing sub-resolution assist features on opposite sides of the line of the line/space pair; generating a set of linewidth biases; applying the set of linewidth biases to the line of the line/space pair to generate a set of biased-line/space pairs; determining for each biased-line/space pair, a deviation from a design linewidth of the line/space pair when the set of biased-line/space pairs are printed or simulated; and determining from the deviation a correction bias to apply to the line of the line/space pair. The invention also encompasses apparatus and computer programs for carrying out the methods.

US Patent:

7043712, May 9, 2006

Filed:

Sep 9, 2003

Appl. No.:

10/605102

Inventors:

Maharaj Mukherjee - Wappingers Falls NY, US
Zachary Baum - Gardiner NY, US
Mark A. Lavin - Katonah NY, US
Donald J. Samuels - Silverthorne CO, US
Rama N. Singh - Bethel CT, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

G06F 17/50

US Classification:

716 19

Abstract:

A method of designing lithographic masks is provided where mask segments used in a model-based optical proximity correction (MBOPC) scheme are adaptively refined based on local image information, such as image intensity, gradient and curvature. The values of intensity, gradient and curvature are evaluated locally at predetermined evaluation points associated with each segment. An estimate of the image intensity between the local evaluation points is preferably obtained by curve fitting based only on values at the evaluation points. The decision to refine a segment is based on the deviation of the simulated image threshold contour from the target image threshold contour. The output mask layout will provide an image having improved fit to the target image, without a significant increase in computation cost.

US Patent:

7465615, Dec 16, 2008

Filed:

Nov 6, 2007

Appl. No.:

11/935714

Inventors:

Shahid A. Butt - Ossining NY, US
Allen H. Gabor - Katonah NY, US
Donald J. Samuels - Silverthorne CO, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H04L 21/00

US Classification:

438157, 438592, 257E21039

Abstract:

Methods of forming adjacent polyconductor line ends and a mask therefor are disclosed. In one embodiment, the method includes forming a polyconductor layer over an isolation region; forming a mask over the polyconductor layer, the mask including shapes to create the polyconductor line ends and a correction element to ensure a designed proximity of the polyconductor line ends; and etching the polyconductor layer using the patterned photoresist mask to create the adjacent polyconductor line ends, wherein the correction element is removed during the etching.

US Patent:

7715059, May 11, 2010

Filed:

Oct 22, 2003

Appl. No.:

10/690759

Inventors:

William H. Advocate - Staatsburg NY, US
Donald J. Samuels - Silverthorne CO, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H04N 1/00
H04N 1/40
H04N 1/387
G06F 3/12
G06F 15/16
G06K 9/20

US Classification:

358405, 358 115, 358448, 358453, 358462, 358465, 709206, 709207, 382283

Abstract:

A method, system and program product for comparing a junk fax image stored in a database to an incoming facsimile image to determine whether the incoming facsimile image is a junk fax. If the facsimile image is a junk fax, the image is either deleted or the communication terminated. The invention also provides a junk fax determinator by which an incoming facsimile image can be designated as a junk fax. In one embodiment, a recipient (user) can make the determination as to whether the incoming facsimile image is a junk fax and generate a personal junk fax database. In another embodiment, the recipient (user) can scan a hard copy document to form an incoming facsimile image, which can be saved as a junk fax in a personal junk fax database.

US Patent:

7727825, Jun 1, 2010

Filed:

Jul 23, 2008

Appl. No.:

12/178072

Inventors:

Shahid A. Butt - Ossining NY, US
Allen H. Gabor - Katonah NY, US
Donald J. Samuels - Silverthorne CO, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 21/00

US Classification:

438157, 438592, 430 5, 257E21039

Abstract:

Methods of forming adjacent polyconductor line ends and a mask therefor are disclosed. In one embodiment, the method includes forming a polyconductor layer over an isolation region; forming a mask over the polyconductor layer, the mask including shapes to create the polyconductor line ends and a correction element to ensure a designed proximity of the polyconductor line ends; and etching the polyconductor layer using the patterned photoresist mask to create the adjacent polyconductor line ends, wherein the correction element is removed during the etching.