Donald R Samuels

US Patent:

7465615, Dec 16, 2008

Filed:

Nov 6, 2007

Appl. No.:

11/935714

Inventors:

Shahid A. Butt - Ossining NY, US
Allen H. Gabor - Katonah NY, US
Donald J. Samuels - Silverthorne CO, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H04L 21/00

US Classification:

438157, 438592, 257E21039

Abstract:

Methods of forming adjacent polyconductor line ends and a mask therefor are disclosed. In one embodiment, the method includes forming a polyconductor layer over an isolation region; forming a mask over the polyconductor layer, the mask including shapes to create the polyconductor line ends and a correction element to ensure a designed proximity of the polyconductor line ends; and etching the polyconductor layer using the patterned photoresist mask to create the adjacent polyconductor line ends, wherein the correction element is removed during the etching.

US Patent:

7727825, Jun 1, 2010

Filed:

Jul 23, 2008

Appl. No.:

12/178072

Inventors:

Shahid A. Butt - Ossining NY, US
Allen H. Gabor - Katonah NY, US
Donald J. Samuels - Silverthorne CO, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 21/00

US Classification:

438157, 438592, 430 5, 257E21039

Abstract:

Methods of forming adjacent polyconductor line ends and a mask therefor are disclosed. In one embodiment, the method includes forming a polyconductor layer over an isolation region; forming a mask over the polyconductor layer, the mask including shapes to create the polyconductor line ends and a correction element to ensure a designed proximity of the polyconductor line ends; and etching the polyconductor layer using the patterned photoresist mask to create the adjacent polyconductor line ends, wherein the correction element is removed during the etching.