Dong S Kim

US Patent:

6787409, Sep 7, 2004

Filed:

Nov 26, 2002

Appl. No.:

10/305464

Inventors:

Hua Ji - San Jose CA
Dong Jun Kim - San Jose CA
Jin-Ho Kim - San Jose CA
Chuck Jang - Fremont CA

Assignee:

Mosel Vitelic, Inc. - Hsin Chu

International Classification:

H01L 218238

US Classification:

438221, 438296, 438424, 438426, 438431, 438435

Abstract:

A method and structure to form shallow trench isolation regions without trench oxide grooving is provided. In particular, a method includes a two-step oxide process in which an oxide liner lines the inside surface of a trench and the trench is filled with a bulk oxide layer, preferably using a high density plasma chemical vapor deposition (HDP-CVD) process. The oxide liner and the bulk oxide layer are formed to have similar etch rates. Thus, when etching the oxide liner and the bulk oxide layer between stack structures, a common dielectric top surface is formed that is substantially planar and without grooves.

US Patent:

6864148, Mar 8, 2005

Filed:

Sep 5, 2003

Appl. No.:

10/655705

Inventors:

Chia-Shun Hsiao - Cupertino CA, US
Dong Jun Kim - San Jose CA, US

Assignee:

Mosel Vitelic, Inc. - Hsin Chu

International Classification:

H01L021/76
H01L021/3205
H01L021/31

US Classification:

438400, 438424, 438595, 438780

Abstract:

A method and structure are provided with reduced gate wrap around to advantageously control for threshold voltage and increase stability in semiconductor devices. A spacer is provided aligned to field dielectric layers to protect the dielectric layers during subsequent etch processes. The spacer is then removed prior to subsequently forming a part of a gate oxide layer and a gate conductor layer. Advantageously, the spacer protects the corner area o the field dielectric and also allows for enhanced thickness of the gate oxide near the corners.

US Patent:

6924542, Aug 2, 2005

Filed:

Jul 29, 2004

Appl. No.:

10/901948

Inventors:

Hua Ji - San Jose CA, US
Dong Jun Kim - San Jose CA, US
Jin-Ho Kim - San Jose CA, US
Chuck Jang - Fremont CA, US

Assignee:

ProMos Technologies, Inc. - Hsin Chu

International Classification:

H01L029/00
H01L021/8238

US Classification:

257501, 257506, 257510, 257513, 438221, 438296, 438426, 438435

Abstract:

A method and structure to form shallow trench isolation regions without trench oxide grooving is provided. In particular, a method includes a two-step oxide process in which an oxide liner lines the inside surface of a trench and the trench is filled with a bulk oxide layer, preferably using a high density plasma chemical vapor deposition (HDP-CVD) process. The oxide liner and the bulk oxide layer are formed to have similar etch rates. Thus, when etching the oxide liner and the bulk oxide layer between stack structures, a common dielectric top surface is formed that is substantially planar and without grooves.

US Patent:

7196381, Mar 27, 2007

Filed:

Jan 31, 2005

Appl. No.:

11/048668

Inventors:

Chia-Shun Hsiao - Cupertino CA, US
Dong Jun Kim - San Jose CA, US

Assignee:

Promos Technologies Pte. Ltd. - Districentre

International Classification:

H01L 29/76
H01L 29/94
H01L 31/062
H01L 31/113
H01L 31/119

US Classification:

257374, 257397, 257510

Abstract:

A method and structure are provided with reduced gate wrap around to advantageously control for threshold voltage and increase stability in semiconductor devices. A spacer is provided aligned to field dielectric layers to protect the dielectric layers during subsequent etch processes. The spacer is then removed prior to subsequently forming a part of a gate oxide layer and a gate conductor layer. Advantageously, the spacer protects the corner area o the field dielectric and also allows for enhanced thickness of the gate oxide near the corners.

US Patent:

7358149, Apr 15, 2008

Filed:

Jul 29, 2005

Appl. No.:

11/193150

Inventors:

Daniel Wang - San Jose CA, US
Chunchieh Huang - Fremont CA, US
Dong Jun Kim - San Jose CA, US

Assignee:

ProMOS Technologies, Inc. - Hsin-Chu

International Classification:

H01L 21/425

US Classification:

438433, 438525, 257E21551

Abstract:

Substrate isolation trench () are formed in a semiconductor substrate (). Dopant (e. g. boron) is implanted into the trench sidewalls by ion implantation to suppress the current leakage along the sidewalls. During the ion implantation, the transistor gate dielectric () faces the ion stream, but damage to the gate dielectric is annealed in subsequent thermal steps. In some embodiments, the dopant implantation is an angled implant. The implant is performed from the opposite sides of the wafer, and thus from the opposite sides of each active area. Each active area includes a region implanted from one side and a region implanted from the opposite side. The two regions overlap to facilitate threshold voltage adjustment.

US Patent:

7387942, Jun 17, 2008

Filed:

Dec 9, 2003

Appl. No.:

10/732616

Inventors:

Daniel Wang - San Jose CA, US
Chunchieh Huang - Fremont CA, US
Dong Jun Kim - San Jose CA, US

Assignee:

ProMOS Technologies Inc. - Hsin-Chu

International Classification:

H01L 21/425
H01L 21/762

US Classification:

438433, 438524, 438525, 257E21345

Abstract:

Substrate isolation trench () are formed in a semiconductor substrate (). Dopant (e. g. boron) is implanted into the trench sidewalls by ion implantation to suppress the current leakage along the sidewalls. During the ion implantation, the transistor gate dielectric () faces the ion stream, but damage to the gate dielectric is annealed in subsequent thermal steps. In some embodiments, the dopant implantation is an angled implant. The implant is performed from the opposite sides of the wafer, and thus from the opposite sides of each active area. Each active area includes a region implanted from one side and a region implanted from the opposite side. The two regions overlap to facilitate threshold voltage adjustment.

US Patent:

7785427, Aug 31, 2010

Filed:

Apr 20, 2007

Appl. No.:

11/788858

Inventors:

Phillip James Maziasz - Oak Ridge TN, US
John Paul Shingledecker - Knoxville TN, US
Michael Leonard Santella - Knoxville TN, US
Joachim Hugo Schneibel - Knoxville TN, US
Vinod Kumar Sikka - Oak Ridge TN, US
Harold J. Vinegar - Bellaire TX, US
Randy Carl John - Houston TX, US
Dong Sub Kim - Sugar Land TX, US

Assignee:

Shell Oil Company - Houston TX

International Classification:

C22C 38/42
C22C 38/58
E21B 36/00

US Classification:

148327, 148326, 148442, 148419, 420 45, 420 58, 420 59, 420582, 4205841, 166 60, 166 66, 166248, 166302

Abstract:

High strength metal alloys are described herein. At least one composition of a metal alloy includes chromium, nickel, copper, manganese, silicon, niobium, tungsten and iron. System, methods, and heaters that include the high strength metal alloys are described herein. At least one heater system may include a canister at least partially made from material containing at least one of the metal alloys. At least one system for heating a subterranean formation may include a tubular that is at least partially made from a material containing at least one of the metal alloys.

US Patent:

8192682, Jun 5, 2012

Filed:

Apr 26, 2010

Appl. No.:

12/767565

Inventors:

Phillip James Maziasz - Oak Ridge TN, US
John Paul Shingledecker - Knoxville TN, US
Michael Leonard Santella - Knoxville TN, US
Joachim Hugo Schneibel - Knoxville TN, US
Vinod Kumar Sikka - Oak Ridge TN, US
Harold J. Vinegar - Bellaire TX, US
Randy Carl John - Houston TX, US
Dong Sub Kim - Sugar Land TX, US

Assignee:

Shell Oil Company - Houston TX

International Classification:

C22C 38/42
C22C 38/48
C22C 38/58

US Classification:

420 46, 420 47, 420 48, 420 56, 420 57, 420 58, 420 59, 148326, 148327

Abstract:

High strength metal alloys are described herein. At least one composition of a metal alloy includes chromium, nickel, copper, manganese, silicon, niobium, tungsten and iron. System, methods, and heaters that include the high strength metal alloys are described herein. At least one heater system may include a canister at least partially made from material containing at least one of the metal alloys. At least one system for heating a subterranean formation may include a tublar that is at least partially made from a material containing at least one of the metal alloys.