Douglas Robert Gordon

US Patent:

8299286, Oct 30, 2012

Filed:

Dec 4, 2007

Appl. No.:

11/949871

Inventors:

Robin A. Gardiner - Strasslach, DE
Thomas H. Baum - New Fairfield CT, US
Douglas Cameron Gordon - Durango CO, US
Timothy E. Glassman - Portland OR, US
Sofia Pombrik - Bethel CT, US
Brian A. Vaartstra - Nampa ID, US
Peter S. Kirlin - Austin TX, US

Assignee:

Advanced Technology Materials, Inc. - Danbury CT

International Classification:

C07F 7/00
C23C 18/00

US Classification:

556 40, 106 125

Abstract:

A β-diketonate alkoxide metal compound and a source reagent composition are provided. The β-diketonate alkoxide metal compound may include a metal M selected from Mg, Ca, Sr, Ba, Sc, Y, La, Ce, Ti, Zr, Hf, Pr, V, Nb, Ta, Nd, Cr, W, Pm, Mn, Re, Sm, Fe, Ru, Eu, Co, Rh, Ir, Gd, Ni, Tb, Cu, Dy, Ho, Al, Tl, Er, Sn, Pb, Tm, Bi, Lu, Th, Pd, Pt, Ga, In, Au, Ag, Li, Na, K, Rb, Cs, Mo, and Yb. The metal may be complexed to at least one alkoxide ligand and one β-diketonate ligand.

US Patent:

58206647, Oct 13, 1998

Filed:

Mar 31, 1995

Appl. No.:

8/414504

Inventors:

Robin A. Gardiner - Bethel CT
Peter S. Kirlin - Bethel CT
Thomas H. Baum - New Fairfield CT
Douglas Gordon - Salt Lake City UT
Timothy E. Glassman - Danbury CT
Sofia Pombrik - Bethel CT
Brian A. Vaartstra - Brookfield CT

Assignee:

Advanced Technology Materials, Inc. - Danbury CT

International Classification:

C09K 300
C23C 1640

US Classification:

10628717

Abstract:

A metal source reagent liquid solution, comprising: (i) at least one metal coordination complex including a metal to which is coordinatively bound at least one ligand in a stable complex, wherein the ligand is selected from the group consisting of:. beta. -diketonates,. beta. -ketoiminates,. beta. -diiminates, C. sub. 1 -C. sub. 8 alkyl, C. sub. 2 -C. sub. 10 alkenyl, C. sub. 2 -C. sub. 15 cycloalkenyl, C. sub. 6 -C. sub. 10 aryl, C. sub. 1 -C. sub. 8 alkoxy, and fluorinated derivatives thereof; and (ii) a solvent for the metal coordination complex. The solutions are usefully employed for chemical vapor deposition of metals from the metal coordination complexes, such as Mg, Ca, Sr, Ba, Sc, Y, La, Ce, Ti, Zr, Hf, Pr, V, Nb, Ta, Nd, Cr, W, Pm, Mn, Re, Sm, Fe, Ru, Eu, Co, Rh, Ir, Gd, Ni, Tb, Cu, Dy, Ho, Al, Tl, Er, Sn, Pb, Tm, Bi, and/or Yb. The solvent may comprise glyme solvents, alkanols, organic ethers, aliphatic hydrocarbons, and/or aromatic hydrocarbons. Solutions of the invention having two or more metal coordination complexes are resistant to detrimental ligand exchange reactions which adversely affect the stability and/or volatilizability of the metal complex for CVD applications.

US Patent:

50517856, Sep 24, 1991

Filed:

Jun 22, 1989

Appl. No.:

7/369763

Inventors:

Charles P. Beetz - New Milford CT
Douglas C. Gordon - Cornwall CT
Duncan W. Brown - Wilton CT

Assignee:

Advanced Technology Materials, Inc. - Danbury CT

International Classification:

H01L 29280
H01L 29720
H01L 49020
H01L 21205

US Classification:

357 4

Abstract:

N-type semiconducting diamond is disclosed, which is intrinsically, i. e. , at the time of diamond formation, doped with n-type dopant atoms. Such diamond is advantageously formed by chemical vapor deposition from a source gas mixture comprising a carbon source compound for the diamond, and a volatile precursor compound for the n-type impurity species, so that the n-type impurity atoms are doped in the diamond film in situ during its formation. By such in situ formation technique, shallow n-type impurity atoms, e. g. , lithium, arsenic, phosphorous, scandium, antimony, bismuth, and the like, may be incorporated into the crystal lattice in a uniform manner, and without the occurrence of gross lattice asperities and other lattice damage artifacts which result from ion implanation techniques. A corresponding chemical vapor deposition method of forming the n-type semiconducting diamond is disclosed. The n-type semiconducting diamond of the invention may be usefully employed in the formation of diamond-based transistor devices comprising pn diamond junctions, and in other microelectronic device applications.

US Patent:

61105295, Aug 29, 2000

Filed:

Jun 7, 1995

Appl. No.:

8/484654

Inventors:

Robin A. Gardiner - Bethel CT
Peter S. Kirlin - Bethel CT
Thomas H. Baum - New Fairfield CT
Douglas Gordon - Salt Lake City UT
Timothy E. Glassman - Danbury CT
Sofia Pombrik - Bethel CT
Brian A. Vaartstra - Boise ID

International Classification:

C23C 1600

US Classification:

427250

Abstract:

A method of forming on a substrate a metal film, comprising depositing said metal film on said substrate via chemical vapor deposition from a metalorganic complex of the formula: MA. sub. Y X wherein: M is a y-valent metal; A is a monodentate or multidentate organic ligand coordinated to M which allows complexing of MA. sub. y with X; y is an integer having a value of 2, 3 or 4; each of the A ligands may be the same or different; and X is a monodentate or multidentate ligand coordinated to M and containing one or more atoms independently selected from the group consisting of atoms of the elements C, N, H, S, O and F. The metal M may be selected from the group consisting of Cu, Ba, Sr, La, Nd, Ce, Pr, Sm, Eu, Th, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Bi, Tl, Y, Pb, Ni, Pd, Pt, Al, Ga, In, Ag, Au, Co, Rh, Ir, Fe, Ru, Sn, Li, Na, K, Rb, Cs, Ca, Mg, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, and W. A may be selected from the group consisting of. beta. -diketonates,. beta.

US Patent:

56770022, Oct 14, 1997

Filed:

May 30, 1995

Appl. No.:

8/453380

Inventors:

Peter S. Kirlin - Bethel CT
Brian A. Vaartstra - Bethel CT
Douglas Gordon - Salt Lake City UT
Timothy E. Glassman - Danbury CT

Assignee:

Advanced Technology Materials - Danbury CT

International Classification:

C23C 1600

US Classification:

4272481

Abstract:

Niobium and tantalum compounds suitable for use as chemical vapor deposition source reagents, and a process for depositing niobium- or tantalum-containing coatings using the compounds. The compounds have formula M(OR. sup. 1). sub. x (R. sup. 2 --C(GH)--C--C(G)--R. sup. 3). sub. y wherein M is tantalum or niobium; G is oxygen or sulfur; and R. sup. 1, R. sup. 2, and R. sup. 3 are independently selected hydrocarbyl, fluoroalkyl or alkoxy groups,.

US Patent:

56798156, Oct 21, 1997

Filed:

Sep 16, 1994

Appl. No.:

8/307316

Inventors:

Peter S. Kirlin - Bethel CT
Brian A. Vaartstra - Bethel CT
Douglas Gordon - Salt Lake City UT
Timothy E. Glassman - Danbury CT

Assignee:

Advanced Technology Materials, Inc. - Danbury CT

International Classification:

C07F 900
C04B 3500

US Classification:

556 42

Abstract:

Niobium and tantalum compounds suitable for use as chemical vapor deposition source reagents, and a process for depositing niobium- or tantalum-containing coatings using the compounds. The compounds have formula M(OR. sup. 1). sub. x (R. sup. 2 --C(GH)--C--C(G)--R. sup. 3). sub. y wherein M is tantalum or niobium; G is oxygen or sulfur; and R. sup. 1, R. sup. 2, and R. sup. 3 are independently selected hydrocarbyl, fluoroalkyl or alkoxy groups.

US Patent:

53129830, May 17, 1994

Filed:

Feb 15, 1991

Appl. No.:

7/656564

Inventors:

Duncan W. Brown - Wilton CT
Rein U. Kirss - Needham MA
Douglas Gordon - Cornwall Bridge CT

Assignee:

Advanced Technology Materials, Inc. - Danbury CT

International Classification:

C07F 1100

US Classification:

562899

Abstract:

Novel tellurium compounds of the present invention have the formula: TeR. sup. 1 R. sup. 2 wherein R. sup. 1 is a fluorinated alkyl having the formula C. sub. n F. sub. (2n+1)-x H. sub. x where n may range from 1 to 6 and x may range from 0 to 2n, and R. sup. 2 is selected from the group consisting of alkyls having 2 to 6 carbon atoms, cycloalkyls having 3 to 6 carbon atoms, allyl, alkyl-substituted allyl having 4 to 6 carbon atoms, cyclopentadienyl, benzyl, alpha-methylbenzyl, and bis(alpha-methyl)benzyl. The novel tellurium reagents are useful as sources for organometallic vapor deposition processes, particularly the MOCVD fabrication of II-VI semiconductor materials such as Hg. sub. x Cd. sub. 1-x Te. The compounds are synthesized by high yield ligand exchange reactions between Te(R. sup. 1). sub. 2 and Te(R. sup. 2). sub. 2.