Dubravka Jones Bilic

US Patent:

7673519, Mar 9, 2010

Filed:

Aug 29, 2008

Appl. No.:

12/201211

Inventors:

Marco Fuhrmann - Gilbert AZ, US
Dubravka Bilic - Scottsdale AZ, US
Thomas D. Ohe - Tempe AZ, US

Assignee:

Freescale Semiconductor, Inc. - Austin TX

International Classification:

G01L 9/12

US Classification:

73718, 73724

Abstract:

A pressure sensor includes a first set of electrodes, a second set of electrodes, and a common electrode. The first and second sets of electrodes overlie an insulative surface, wherein the first set of electrodes represent sense capacitor bottom electrodes and the second set of electrodes represent reference capacitor bottom electrodes. The second set of electrodes is configured in an interleaved arrangement with the first set of electrodes, wherein the geometry of individual electrodes of the first set of electrodes substantially matches the geometry of individual electrodes of the second set of electrodes. In addition, the common electrode represents a sense and reference capacitor top electrode that is (i) overlying, (ii) spaced from, and (iii) configured in connection with the first and second sets of electrodes to form a common pressure cavity, wherein the common electrode includes first portions corresponding to sense membrane portions and second portions corresponding to reference membrane portions, further wherein an area of a sense membrane portion is greater than an area of a reference membrane portion.

US Patent:

20080073760, Mar 27, 2008

Filed:

Sep 25, 2006

Appl. No.:

11/526971

Inventors:

Andrew C. McNeil - Chandler AZ, US
Dubravka Bilic - Scottsdale AZ, US
Stephen R. Hooper - Mesa AZ, US

International Classification:

H01L 23/495

US Classification:

257669

Abstract:

A capacitor assembly () is formed on a substrate (). The capacitor assembly a first conductive plate () and a second conductive plate () formed over the substrate such that the second conductive plate is separated from the first conductive plate by a distance. A conductive trace () is formed over the substrate that is connected to the first conductive plate and extends away from the capacitor assembly. A conductive shield () is formed over at least a portion of the conductive trace that is separated from the first and second conductive plates to control a fringe capacitance between the second conductive plate and the conductive trace.

US Patent:

20130219994, Aug 29, 2013

Filed:

Feb 27, 2012

Appl. No.:

13/406439

Inventors:

Dubravka Bilic - Scottsdale AZ, US
Andrew D. McNeil - Chandler AZ, US

International Classification:

G01N 19/10

US Classification:

73 2902

Abstract:

A combination sensor and corresponding method of measuring a plurality of environmental parameters uses a pressure sensor disposed on an integrated circuit die; a humidity sensor disposed on the integrated circuit die; and a circuit coupled to and shared by the pressure sensor and the humidity sensor to facilitate pressure and humidity sensing

US Patent:

20170341926, Nov 30, 2017

Filed:

Nov 10, 2014

Appl. No.:

14/537498

Inventors:

Chad S Dawson - Queen Creek AZ, US
Dubravka Bilic - Scottsdale AZ, US
Lianjun Liu - Chandler AZ, US
Andrew C McNeil - Chandler AZ, US

International Classification:

B81B 3/00
G01L 9/00

Abstract:

Methods for fabricating crack resistant Microelectromechanical (MEMS) devices are provided, as are MEMS devices produced pursuant to such methods. In one embodiment, the method includes forming a sacrificial body over a substrate, producing a multi-layer membrane structure on the substrate, and removing at least a portion of the sacrificial body to form an inner cavity within the multi-layer membrane structure. The multi-layer membrane structure is produced by first forming a base membrane layer over and around the sacrificial body such that the base membrane layer has a non-planar upper surface. A predetermined thickness of the base membrane layer is then removed to impart the base membrane layer with a planar upper surface. A cap membrane layer is formed over the planar upper surface of the base membrane layer. The cap membrane layer is composed of a material having a substantially parallel grain orientation.

US Patent:

20170074738, Mar 16, 2017

Filed:

Sep 15, 2015

Appl. No.:

14/854648

Inventors:

- Austin TX, US
Dubravka BILIC - Scottsdale AZ, US
Chad S. DAWSON - Queen Creek AZ, US
Fengyuan LI - Chandler AZ, US

International Classification:

G01L 9/00

Abstract:

A differential capacitive output pressure sensor device includes a pressure sensor diaphragm layer comprising a pressure sensing diaphragm portion, a movable electrode on the pressure sensing diaphragm portion, a fixed electrode, and a device layer electrode. The pressure sensor device further includes a device layer including a fixed element connected to the device layer electrode and a movable element connected to the movable electrode. As the pressure changes, the pressure sensing diaphragm portion including the movable electrode and the movable element move. This changes the capacitance between the movable electrode and the fixed element inversely to the change in capacitance between the fixed electrode and the moveable element. Accordingly, a differential capacitive output is provided that has improved linearity with respect to the pressure change and increased sensitivity allowing the change in pressure to be measured readily and accurately.

US Patent:

20160075553, Mar 17, 2016

Filed:

Nov 23, 2015

Appl. No.:

14/949869

Inventors:

Dubravka Bilic - Scottsdale AZ, US
Stephen R. Hooper - Mesa AZ, US

Assignee:

Freescale Semiconductor, Inc. - Austin TX

International Classification:

B81B 7/00

Abstract:

A microelectromechanical system (MEMS) sensor device includes a substrate, a support structure supported by the substrate, a membrane supported by the support structure and spaced from the substrate, and a polymer layer covering the membrane.

US Patent:

20150123222, May 7, 2015

Filed:

Nov 1, 2013

Appl. No.:

14/069633

Inventors:

Dubravka Bilic - Scottsdale AZ, US
Stephen R. Hooper - Mesa AZ, US

Assignee:

FREESCALE SEMICONDUCTOR, INC. - Austin TX

International Classification:

B81C 1/00
B81B 7/00

US Classification:

257418, 438 50

Abstract:

A method of fabricating a sensor device includes forming a plurality of sensor structures on a wafer, covering the plurality of sensor structures with a polymer layer, and dicing the wafer into a plurality of die while each sensor structure remains covered by the polymer layer.

US Patent:

20140210018, Jul 31, 2014

Filed:

Jan 29, 2013

Appl. No.:

13/753034

Inventors:

Chad S. Dawson - Queen Creek AZ, US
Dubravka Bilic - Scottsdale AZ, US
Lianjun Liu - Chandler AZ, US
Andrew C. McNeil - Chandler AZ, US

International Classification:

B81B 3/00
B81C 1/00

US Classification:

257415, 438 50

Abstract:

Methods for fabricating crack resistant Microelectromechanical (MEMS) devices are provided, as are MEMS devices produced pursuant to such methods. In one embodiment, the method includes forming a sacrificial body over a substrate, producing a multi-layer membrane structure on the substrate, and removing at least a portion of the sacrificial body to form an inner cavity within the multi-layer membrane structure. The multi-layer membrane structure is produced by first forming a base membrane layer over and around the sacrificial body such that the base membrane layer has a non-planar upper surface. A predetermined thickness of the base membrane layer is then removed to impart the base membrane layer with a planar upper surface. A cap membrane layer is formed over the planar upper surface of the base membrane layer. The cap membrane layer is composed of a material having a substantially parallel grain orientation.