Dustin T Do

age ~56

from Milpitas, CA

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Dustin Do Phones & Addresses

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Specialties:

Emergency Medicine

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Specialties:

Internal Medicine

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Specialties:

Family Medicine

N-Well/P-Well Strap Structures
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US Patent:

20120032276, Feb 9, 2012
Filed:

Aug 6, 2010
Appl. No.:

12/851805
Inventors:

Dustin Do - Morgan Hill CA, US
Andy Lee - San Jose CA, US
Giles V. Powell - Alameda CA, US
Bradley Jensen - San Jose CA, US
Swee Aun Lau - Penang, MY
Thomas H. White - Santa Clara CA, US
Assignee:

Altera Corporation - San Jose CA
International Classification:

H01L 29/06
H01L 29/78
US Classification:

257401, 257E29007, 257E29255
Abstract:

Embodiments of N-well or P-well strap structures are disclosed with lower space requirements achieved by forming the strap on both sides of one or more floating polysilicon gate fingers.

N-Well/P-Well Strap Structures
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US Patent:

20130140640, Jun 6, 2013
Filed:

Aug 4, 2011
Appl. No.:

13/814590
Inventors:

Dustin Do - Morgan Hill CA, US
Andy L. Lee - San Jose CA, US
Giles V. Powell - Alameda CA, US
Bradley Jensen - San Jose CA, US
Swee Aun Lau - Penang, MY
Assignee:

ALTERA CORPORATION - San Jose CA
International Classification:

H01L 27/04
US Classification:

257368
Abstract:

Embodiments of N-well or P-well strap structures are disclosed with lower requirements achieved by forming the strap on both sides of one or more floating polysilicon gate fingers.

Antenna Diode Circuitry And Method Of Manufacture
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US Patent:

20140159157, Jun 12, 2014
Filed:

Dec 7, 2012
Appl. No.:

13/708556
Inventors:

Altera Corporation - , US
Shue Ling Ong - Kuala Sepetang, MY
Dustin Do - Milpitas CA, US
Assignee:

Altera Corporation - San Jose CA
International Classification:

H01L 27/088
H01L 29/66
US Classification:

257368, 438294, 438299
Abstract:

An integrated circuit with an antenna diode is described. The integrated circuit includes a substrate, a transistor, first and second diffusion regions, and a dummy gate. The transistor and the first and second diffusion regions may be formed within the substrate. The transistor has its gate structure disposed on the substrate. The dummy gate structure may be disposed on a region of the substrate such that it separates the first diffusion region from the second diffusion region. The dummy gate structure may also be coupled to the transistor gate structure.