Edmund F Burke

US Patent:

8226835, Jul 24, 2012

Filed:

Mar 6, 2009

Appl. No.:

12/399449

Inventors:

John J. Hautala - Beverly MA, US
Edmund Burke - West Newbury MA, US
Noel Russell - Waterford NY, US
Gregory Herdt - Selkirk NY, US

Assignee:

TEL Epion Inc. - Billerica MA

International Classification:

H01L 21/44

US Classification:

216 18, 216 62, 216 67, 216 87, 216 88, 427523, 427527, 427533, 427535, 438631, 438634, 438689, 438692, 438902

Abstract:

A method of preparing a thin film on a substrate is described. The method comprises forming an ultra-thin hermetic film over a portion of a substrate using a gas cluster ion beam (GCIB), wherein the ultra-thin hermetic film has a thickness less than approximately 5 nm. The method further comprises providing a substrate in a reduced-pressure environment, and generating a GCIB in the reduced-pressure environment from a pressurized gas mixture. A beam acceleration potential and a beam dose are selected to achieve a thickness of the thin film less than about 5 nanometers (nm). The GCIB is accelerated according to the beam acceleration potential, and the accelerated GCIB is irradiated onto at least a portion of the substrate according to the beam dose. By doing so, the thin film is formed on the at least a portion of the substrate to achieve the thickness desired.

US Patent:

20100193898, Aug 5, 2010

Filed:

Apr 23, 2009

Appl. No.:

12/428856

Inventors:

John J. Hautala - Beverly MA, US
Edmund Burke - West Newbury MA, US
Martin D. Tabat - Nashua NH, US
Luis Fernandez - Somerville MA, US

Assignee:

Tel Epion Inc. - Billerica MA

International Classification:

H01L 29/06
H01L 21/762

US Classification:

257506, 438437, 257E21546, 257E2902

Abstract:

A method of forming shallow trench isolation on a substrate using a gas cluster ion beam (GCIB) is described. The method comprises generating a GCIB, and irradiating the substrate with the GCIB to form a shallow trench isolation structure by depositing a dielectric layer in at least one region on the substrate.

US Patent:

20100200774, Aug 12, 2010

Filed:

Feb 9, 2009

Appl. No.:

12/367757

Inventors:

Edmund Burke - West Newbury MA, US
John J. Hautala - Beverly MA, US
Michael Graf - Belmont MA, US

Assignee:

TEL Epion Inc. - Billerica MA

International Classification:

H01J 37/08

US Classification:

25049221

Abstract:

A method of forming a thin film on a substrate is described. The method comprises depositing a first material layer on a substrate using a first gas cluster ion beam (GCIB), the first material layer comprising a first atomic constituent, and growing a second material layer from at least a surface portion of the first material layer by introducing a second atomic constituent using a second GCIB, the second material layer comprising a reaction product of the first and second atomic constituents.

US Patent:

20120225532, Sep 6, 2012

Filed:

Mar 3, 2011

Appl. No.:

13/039965

Inventors:

John J. Hautala - Beverly MA, US
Edmund Burke - West Newbury MA, US

Assignee:

TEL EPION INC. - Billerica MA

International Classification:

H01L 21/02

US Classification:

438382, 257E21004

Abstract:

A method for controlling a resistive property or conductive property in a resistive element using a gas cluster ion beam (GCIB) is described. In one embodiment, the method may include controlling a resistive switching behavior in a resistive switching random-access memory device using a gas cluster ion beam (GCIB).

US Patent:

50966375, Mar 17, 1992

Filed:

Dec 5, 1990

Appl. No.:

7/623856

Inventors:

Anthony J. DiLeo - Westford MA
Anthony E. Allegrezza - Milford MA
Edmund T. Burke - Winchester MA

Assignee:

Millipore Corporation - Bedford MA

International Classification:

B01D 6114
B01D 6700

US Classification:

264 451

Abstract:

A composite membrane and process utilizing the membrane which is capable of selectively removing particles such as viral particles from a solution such as a protein solution is provided. The membrane comprises a porous membrane substrate, a surface skin having ultrafiltration separation properties and an intermediate porous zone between the substrate and the skin which intermediate zone has an average pore size smaller than that of the substrate. The intermediate zone is free of voids which break the skin and which directly fluid communicate with the substrate. The composite is capable of a log reduction value of at least 3 (99. 9% removal) of particles selectively from solution.

US Patent:

50172921, May 21, 1991

Filed:

May 10, 1990

Appl. No.:

7/521784

Inventors:

Anthony J. DiLeo - Westford MA
Anthony E. Allegrezza - Milford MA
Edmund T. Burke - Winchester MA

Assignee:

Millipore Corporation - Bedford MA

International Classification:

B01D 1614

US Classification:

210645

Abstract:

A composite membrane and process utilizing the membrane which is capable of selectively removing particles such as viral particles from a solution such as a protein solution is provided. The membrane comprises a porous membrane substrate, a surface skin having ultrafiltration separation properties and an intermediate porous zone between the substrate and the skin which intermediate zone has an average pore size smaller than that of the substrate. The intermediate zone is free of voids which break the skin and which directly fluid communicate with the substrate. The composite is capable of a log reduction value of at least 3 (99. 9% removal) of particles selectively from solution.

US Patent:

20150056815, Feb 26, 2015

Filed:

Jun 17, 2014

Appl. No.:

14/306305

Inventors:

- Billerica MA, US
Edmund BURKE - West Newbury MA, US

International Classification:

H01L 21/3065
H01L 21/3105

US Classification:

438712

Abstract:

A gas cluster ion beam (GCIB) etching method for adjusting a fin height in finFET devices is described. The method includes providing a substrate having a fin structure and a gap-fill material layer completely overlying the fin structure and filling the regions between each fin of the fin structure, wherein each fin includes a cap layer formed on a top surface thereof, and planarizing the gap-fill material layer until the cap layer is exposed on at least one fin of the fin structure. Additionally, the method includes setting a target fin height for the fin structure, wherein the fin height measured from an interface between the cap layer and the fin structure, and exposing the substrate to a GCIB and recessing the gap-fill material layer relative to the cap layer until the target fin height is substantially achieved.