Edward Lyle Fisk

US Patent:

56772300, Oct 14, 1997

Filed:

Dec 1, 1995

Appl. No.:

8/566333

Inventors:

Charles E. Weitzel - Mesa AZ
Edward L. Fisk - Mesa AZ
Sung P. Pack - Tempe AZ

Assignee:

Motorola - Schaumburg IL

International Classification:

H01L 21302
H01L 21304
H01L 21306
H01L 2176

US Classification:

437 67

Abstract:

A method of planarizing wide bandgap semiconductor devices selected from a group including SiC, GaN and diamond having a mesa defined thereon by a trench with a depth of 1 to 2 micrometers and a width of 2 to 10 micrometers. A layer of dielectric material is deposited on the substrate overlying and surrounding the mesa, to a height approximately equal to the height of the mesa and the dielectric material is etched from atop the mesa and from a surrounding area. Layers of spin on glass are deposited to fill the surrounding area and etched to achieve a planar surface including the mesa and the layer of dielectric material.

US Patent:

57961220, Aug 18, 1998

Filed:

May 9, 1997

Appl. No.:

8/853283

Inventors:

Charles E. Weitzel - Mesa AZ
Edward L. Fisk - Mesa AZ
Sung P. Pack - Tempe AZ

Assignee:

Motorola, Inc. - Schaumburg IL

International Classification:

H01L 2912

US Classification:

257 76

Abstract:

A method of planarizing wide bandgap semiconductor devices selected from a group including SiC, GaN and diamond having a mesa defined thereon by a trench with a depth of 1 to 2 micrometers and a width of 2 to 10 micrometers. A layer of dielectric material is deposited on the substrate overlying and surrounding the mesa, to a height approximately equal to the height of the mesa and the dielectric material is etched from atop the mesa and from a surrounding area. Layers of spin on glass are deposited to fill the surrounding area and etched to achieve a planar surface including the mesa and the layer of dielectric material.