Edwin A Lee

US Patent:

6344650, Feb 5, 2002

Filed:

Apr 23, 1999

Appl. No.:

09/298111

Inventors:

Edwin Y. Lee - Livermore CA
Ralph B. James - Livermore CA

Assignee:

Sandia Corporation - Livermore CA

International Classification:

G01T 124

US Classification:

25037001, 25037012, 25037013, 257 21

Abstract:

An electron gas grid semiconductor radiation detector (EGGSRAD) useful for gamma-ray and x-ray spectrometers and imaging systems is described. The radiation detector employs doping of the semiconductor and variation of the semiconductor detector material to form a two-dimensional electron gas, and to allow transistor action within the detector. This radiation detector provides superior energy resolution and radiation detection sensitivity over the conventional semiconductor radiation detector and the âelectron-onlyâ semiconductor radiation detectors which utilize a grid electrode near the anode. In a first embodiment, the EGGSRAD incorporates delta-doped layers adjacent the anode which produce an internal free electron grid well to which an external grid electrode can be attached. In a second embodiment, a quantum well is formed between two of the delta-doped layers, and the quantum well forms the internal free electron gas grid to which an external grid electrode can be attached. Two other embodiments which are similar to the first and second embodiment involve a graded bandgap formed by changing the composition of the semiconductor material near the first and last of the delta-doped layers to increase or decrease the conduction band energy adjacent to the delta-doped layers.

US Patent:

6350989, Feb 26, 2002

Filed:

Apr 23, 1999

Appl. No.:

09/298685

Inventors:

Edwin Y. Lee - Livermore CA
Ralph B. James - Livermore CA

Assignee:

Sandia National Laboratories - Livermore CA

International Classification:

H01L 310224

US Classification:

25037001, 25037013, 25037012, 257428

Abstract:

Wafer-fused semiconductor radiation detector useful for gamma-ray and x-ray spectrometers and imaging systems. The detector is fabricated using wafer fusion to insert an electrically conductive grid, typically comprising a metal, between two solid semiconductor pieces, one having a cathode (negative electrode) and the other having an anode (positive electrode). The wafer fused semiconductor radiation detector functions like the commonly used Frisch grid radiation detector, in which an electrically conductive grid is inserted in high vacuum between the cathode and the anode. The wafer-fused semiconductor radiation detector can be fabricated using the same or two different semiconductor materials of different sizes and of the same or different thicknesses; and it may utilize a wide range of metals, or other electrically conducting materials, to form the grid, to optimize the detector performance, without being constrained by structural dissimilarity of the individual parts. The wafer-fused detector is basically formed, for example, by etching spaced grooves across one end of one of two pieces of semiconductor materials, partially filling the grooves with a selected electrical conductor which forms a grid electrode, and then fusing the grooved end of the one semiconductor piece to an end of the other semiconductor piece with a cathode and an anode being formed on opposite ends of the semiconductor pieces.

US Patent:

7858762, Dec 28, 2010

Filed:

Jul 26, 2002

Appl. No.:

10/483842

Inventors:

Katherine D Collier - Redwood City CA, US
Edwin Lee - San Francisco CA, US
Nicholas Leiva - San Francisco CA, US
Thomas B Morrison - Winchester MA, US
Volker Schellenberger - Palo Alto CA, US
Olga V Selifonova - Plymouth MN, US
Adam C Kean - Palo Alto CA, US

Assignee:

Genencor International, Inc. - Palo Alto CA

International Classification:

C07H 21/02
C07H 21/04
A61K 39/38
A61K 39/07

US Classification:

536 231, 4241841, 4242461, 536 237

Abstract:

An evolvable production strain of exhibiting continuous or high level expression during protein evolution is described. An evolved pstS promoter facilitates screening and production of secreted proteins.

US Patent:

8415120, Apr 9, 2013

Filed:

Nov 19, 2010

Appl. No.:

12/950880

Inventors:

Katherine D. Collier - Redwood City CA, US
Edwin Lee - San Francisco CA, US
Nicholas Leiva - San Francisco CA, US
Thomas B. Morrison - Winchester MA, US
Volker Schellenberger - Palo Alto CA, US
Olga V. Selifonova - Plymouth MN, US
Adam C. Kean - Palo Alto CA, US

Assignee:

Danisco US Inc. - Palo Alto CA

International Classification:

C12P 21/00

US Classification:

435 711

Abstract:

An evolvable production strain of exhibiting continuous or high level expression during protein evolution is described. An evolved pstS promoter facilitates screening and production of secreted proteins.

US Patent:

20020182734, Dec 5, 2002

Filed:

Aug 10, 2001

Appl. No.:

09/927161

Inventors:

Maria Diaz-Torres - Los Gatos CA, US
Edwin Lee - San Francisco CA, US
Thomas Morrison - Palo Alto CA, US
Volker Schellenberger - Palo Alto CA, US
Olga Selifonova - Plymouth MN, US

International Classification:

C12N015/74
C12N001/21

US Classification:

435/471000, 435/485000, 435/252300, 435/252310

Abstract:

The present invention provides methods for building DNA constructs in vitro, transforming such constructs into competent Bacillus strains with good efficiency, and generating populations of mutants. Also provided is a method to assemble DNA constructs in situ.

US Patent:

20060002023, Jan 5, 2006

Filed:

Jun 30, 2004

Appl. No.:

10/883327

Inventors:

Quang Le - San Jose CA, US
Edwin Hin Lee - San Jose CA, US
Jui-Lung Li - San Jose CA, US
Yi Zheng - San Ramon CA, US

International Classification:

G11B 5/147
G11B 5/127
G11B 5/33

US Classification:

360126000, 360319000

Abstract:

The magnetic head includes a second magnetic shield that is fabricated in a deposition process. The present invention therefore does not require the deposition of the electrically conductive seed layer. In a preferred embodiment, the deposited second magnetic shield is comprised of cobalt zirconium tantalum (CZT). Because the CZT material is relatively soft, it is preferably deposited within an opening formed in a relatively hard RIEable material such as TaO, SiO, SiN, and SiON, such that a subsequent chemical mechanical polishing (CMP) step can be conducted down to the surface of the relatively hard layer.

US Patent:

20060199222, Sep 7, 2006

Filed:

Aug 30, 2005

Appl. No.:

11/215675

Inventors:

Maria Diaz-Torres - Los Gatos CA, US
Edwin Lee - San Francisco CA, US
Thomas Morrison - Palo Alto CA, US
Volker Schellenberger - Palo Alto CA, US
Olga Selifonova - Plymouth MN, US

International Classification:

C40B 40/02
C12N 1/21
C12N 15/74

US Classification:

435007100, 435471000, 435252310

Abstract:

The present invention provides methods for building DNA constructs in vitro, transforming such constructs into competent strains with good efficiency, and generating populations of mutants. Also provided is a method to assemble DNA constructs in situ.

US Patent:

20110104786, May 5, 2011

Filed:

Oct 6, 2008

Appl. No.:

12/681613

Inventors:

Anita Van Kimmenade - San Bruno CA, US
Edwin Lee - San Francisco CA, US
Andrew Shaw - San Francisco CA, US
Louise Wallace - Palo Alto CA, US

International Classification:

C12N 9/54
C12S 9/00
D06M 16/00
C12N 1/21
C12N 1/20
C11D 3/386

US Classification:

435221, 435264, 435263, 43525231, 4352525, 510392

Abstract:

The present invention provides methods and compositions comprising at least one neutral metalloprotease enzyme in the relative absence of serine protease enzyme contaminants. In some embodiments, the neutral metalloprotease finds use in cleaning and other applications. In some particularly preferred embodiments, the present invention provides methods and composi-tions comprising strains engineered to be deficient in multiple serine proteases, and their use in production of recombinant neutral metalloprotease(s).