Eric V Simms

US Patent:

20050239289, Oct 27, 2005

Filed:

Jun 23, 2005

Appl. No.:

11/159772

Inventors:

Nilesh Doke - Dallas TX, US
Chad Kaneshige - McKinney TX, US
John Campbell - Plano TX, US
Eric Simms - Rowlett TX, US
Manoj Jain - Plano TX, US

International Classification:

H01L021/302
B44C001/22

US Classification:

438692000, 216088000, 134002000

Abstract:

Post chemical mechanical polishing (CMP) cleaning methods are disclosed which reduce integrated circuit defects. A corrosion inhibitor is preferably applied during the post-CMP cleaning steps after application of a first chemistry. Subsequent to the application of the corrosion inhibitor a rinsing step using deionized water is employed. In this manner, the corrosion inhibitor applied during the post-CMP clean fills voids created in previous passivation layers by previous chemistries. Also, existing post-CMP equipment may be used to implement the preferred embodiments of the present invention. Preferably the corrosion inhibitor applied during the post-CMP clean is benzotriazole (BTA).

US Patent:

20040266185, Dec 30, 2004

Filed:

Jun 30, 2003

Appl. No.:

10/610414

Inventors:

Nilesh Doke - Dallas TX, US
Chad Kaneshige - McKinney TX, US
John Campbell - Plano TX, US
Eric Simms - Rowlett TX, US
Manoj Jain - Plano TX, US

Assignee:

Texas Instruments Incorporated - Dallas TX

International Classification:

H01L021/302
H01L021/461

US Classification:

438/689000

Abstract:

Post chemical mechanical polishing (CMP) cleaning methods are disclosed which reduce integrated circuit defects. A corrosion inhibitor is preferably applied during the post-CMP cleaning steps after application of a first chemistry. Subsequent to the application of the corrosion inhibitor a rinsing step using deionized water is employed. In this manner, the corrosion inhibitor applied during the post-CMP clean fills voids created in previous passivation layers by previous chemistries. Also, existing post-CMP equipment may be used to implement the preferred embodiments of the present invention. Preferably the corrosion inhibitor applied during the post-CMP clean is benzotriazole (BTA).