Ethan A Sieg

US Patent:

8199590, Jun 12, 2012

Filed:

Sep 24, 2010

Appl. No.:

12/889653

Inventors:

Walter Novosel - New Wilmington PA, US
Ethan Sieg - Hermitage PA, US
Timothy Fiscus - Hermitage PA, US
David Novosel - New Wilmington PA, US
Elaine Novosel, legal representative - West Middlesex PA, US

Assignee:

Novocell Semiconductor, Inc. - Hermitage PA

International Classification:

G11C 7/00

US Classification:

3651892, 36523003

Abstract:

A multiple time programmable non-volatile memory element and associated programming methods that allow for integration of non-volatile memory with other CMOS integrated circuitry utilizing standard CMOS processing. The multiple time programmable non-volatile memory element includes a capacitor, an access transistor that is electrically coupled to the capacitor at a connection node, and a plurality of one time programmable non-volatile memory cells. Each of the plurality of one time programmable non-volatile memory cells is electrically coupled to the connection node and includes a select transistor that is electrically coupled to an antifuse element. The antifuse element is configured to have changed resistivity in response to one or more voltage pulses received at the connection node, the change in resistivity representing a change in logic state.

US Patent:

8208312, Jun 26, 2012

Filed:

Sep 22, 2010

Appl. No.:

12/887956

Inventors:

Walter Novosel - New Wilmington PA, US
Ethan Sieg - Hermitage PA, US
Gary Craig - Carnegie PA, US
David Novosel - New Wilmington PA, US
Elaine Novosel, legal representative - West Middlesex PA, US

Assignee:

Novocell Semiconductor, Inc. - Hermitage PA

International Classification:

G11C 7/00

US Classification:

365189011, 3652257

Abstract:

A non-volatile memory cell and associated programming methods that allow for integration of non-volatile memory with other CMOS integrated circuitry utilizing standard CMOS processing. The non-volatile memory cell includes an antifuse element having a programming node and a capacitor element coupled to the antifuse element and configured to provide one or more voltage pulses to the programming node. The antifuse element is configured to have a changed resistivity after the programming node is subjected to the one or more voltage pulses, the change in resistivity representing a change in logic state. The antifuse element comprises a MOS transistor, its gate being coupled to one of the programming node and a control node, and its source and drain being coupled to the other one of the programming node and the control node. The MOS transistor is formed in a well and the source, drain and well are coupled to the same voltage level.

US Patent:

8134859, Mar 13, 2012

Filed:

Sep 24, 2010

Appl. No.:

12/889659

Inventors:

Walter Novosel - New Wilmington PA, US
Ethan Sieg - Hermitage PA, US
Gary Craig - Carnegie PA, US
David Novosel - New Wilmington PA, US
Elaine Novosel, legal representative - West Middlesex PA, US

Assignee:

Novocell Semiconductor, Inc. - Hermitage PA

International Classification:

G11C 11/00

US Classification:

365148, 3652257

Abstract:

A non-volatile memory cell including an antifuse element having a programming node and a control node, a capacitor element, a precharge element, an access element, and a leakage element. The antifuse element is configured to have changed resistivity (representing a change in logic state) after the programming node is subjected to one or more voltage pulses. The capacitor element, coupled to the programming node, is configured to provide the one or more voltage pulses to the programming node. The precharge element, coupled to the programming node, is configured to increase the one or more voltage pulses provided to the programming to node. The access element, coupled to the control node, is configured to allow determination of the logic state of the antifuse element based on current flow through the access element. The leakage element is coupled to the control node and configured to modify the current flowing through the access element when the resistivity of the antifuse element has not been changed.