Eugene Fuh Chow

US Patent:

6668628, Dec 30, 2003

Filed:

Mar 29, 2002

Appl. No.:

10/112215

Inventors:

Thomas Hantschel - Menlo Park CA
Eugene M. Chow - Stanford CA
David K. Fork - Los Altos CA

Assignee:

Xerox Corporation - Stamford CT

International Classification:

G01B 900

US Classification:

73105

Abstract:

Scanning probe systems, which include scanning probe microscopes (SPMs), atomic force microscope (AFMs), or profilometers, are disclosed that use cantilevered spring (e. g. , stressy metal) probes formed on transparent substrates. When released, a free end bends away from the substrate to form the cantilevered spring probe, which has an in-plane or out-of-plane tip at its free end. The spring probe is mounted in a scanning probe system and is used to scan or otherwise probe a substrate surface. A laser beam is directed through the transparent substrate onto the probe to measure tip movement during scanning or probing. Other detection schemes can also be used (e. g. , interferometry, capacitive, piezoresistive). The probes are used for topography, electrical, optical and thermal measurements. The probes also allow an SPM to operate as a depth gauge.

US Patent:

6734425, May 11, 2004

Filed:

Apr 30, 2002

Appl. No.:

10/136258

Inventors:

Thomas Hantschel - Menlo Park CA
Eugene M. Chow - Stanford CA
David K. Fork - Los Altos CA
Michel A. Rosa - Santa Clara CA
Dirk De Bruyker - Palo Alto CA

Assignee:

Xerox Corporation - Stamford CT

International Classification:

G01B 528

US Classification:

250306, 250307, 73105

Abstract:

Scanning probe systems, which include scanning probe microscopes (SPMs) are disclosed that include cantilevered spring (e. g. , stressy metal) probes and actuation/position sensing electrodes formed on a substrate. The actuation electrodes are used to position the spring probe relative to the substrate using electrostatic, magnetic, acoustic, or piezoelectric arrangements. An actuation signal source is switched between full on and off states to facilitate âON/OFFâ probe actuation in which the spring probe is either fully retracted against the substrate or deployed for scan operations. The position sensing electrodes are used to sense the deflected position of the spring probe relative to the substrate using resistive, magnetic, or piezoresistive arrangements. Spring probe arrays are disclosed that include multiple spring probes arranged on a single substrate. Each spring probe of the array includes a separate actuation electrode that is controlled using âON/OFFâ or tapping probe actuation, and may include a separate position sensing electrode.

US Patent:

6788086, Sep 7, 2004

Filed:

Nov 19, 2003

Appl. No.:

10/717803

Inventors:

Thomas Hantschel - Menlo Park CA
Eugene M. Chow - Stanford CA
David K. Fork - Los Altos CA

Assignee:

Xerox Corporation - Stamford CT

International Classification:

G01R 3102

US Classification:

324762

Abstract:

Scanning probe systems, which include scanning probe microscopes (SPMs), atomic force microscope (AFMs), or profilometers, are disclosed that use cantilevered spring (e. g. , stressy metal) probes formed on transparent substrates. When released, a free end bends away from the substrate to form the cantilevered spring probe, which has an in-plane or out-of-plane tip at its free end. The spring probe is mounted in a scanning probe system and is used to scan or otherwise probe a substrate surface. The probes are used for topography, electrical, optical and thermal measurements.

US Patent:

6912082, Jun 28, 2005

Filed:

Mar 11, 2004

Appl. No.:

10/799237

Inventors:

JengPing Lu - San Jose CA, US
Eugene M. Chow - Stanford CA, US
Jackson H. Ho - Palo Alto CA, US

Assignee:

Palo Alto Research Center Incorporated - Palo Alto CA

International Classification:

G02B026/00

US Classification:

359295, 359290, 359298, 359223

Abstract:

An apparatus integrating electrostatically actuated MEMS devices and high voltage driver (actuator) electronics on a single substrate, where the driver electronics utilize offset-gate high voltage thin-film transistors (HVTFTs) that facilitate the transmission of high actuating voltages using relatively low control voltages, thereby facilitating the formation of large arrays of electrostatically-actuated MEMS devices. The driver circuit is arranged such that the high actuating voltage is applied to an actuating electrode of the actuated MEMS device and drain electrode of the HVTFT when the HVTFT is turned off, thereby minimizing dielectric breakdown. When the HVTFT is turned on in response to the relatively low control voltage, the high actuating voltage is discharged to ground from the drain (offset) electrode to the source (not offset) electrode.

US Patent:

6966784, Nov 22, 2005

Filed:

Dec 19, 2003

Appl. No.:

10/742501

Inventors:

Koenraad F. Van Schuylenbergh - Sunnyvale CA, US
Armin R. Völkel - Mountain View CA, US
Thomas H. DiStefano - Monte Sereno CA, US
Michel A. Rosa - San Jose CA, US
David K. Fork - Los Altos CA, US
Eugene M. Chow - Stanford CA, US
Meng H. Lean - Santa Clara CA, US

Assignee:

Palo Alto Research Center Incorporated - Palo Alto CA

International Classification:

H01R012/00

US Classification:

439 67, 439 61, 439497, 439329, 361803, 361261, 361788

Abstract:

A data transmission interconnect assembly (e. g. , a router) capable of transmission speeds in excess of 40 Gbps in which a line-card is detachably coupled to a backplane using flexible flat cables that are bent to provide a continuous, smooth curve between the connected boards, and connected by a connection apparatus that employs cable-to-cable interface members that are transparent to the transmitted signal waves. Microspring contact structures are formed on the cables, or on a contact structure pressed against the cables, to provide interface arrangements that are smaller than a wavelength of the transmitted signal. A connector apparatus uses a cam mechanism to align the cables, and then to press a contact structure, having micro spring interface members formed thereon, against the cables. An alterative contact structure uses anisotropic conductive film.

US Patent:

7015584, Mar 21, 2006

Filed:

Jul 8, 2003

Appl. No.:

10/615653

Inventors:

Eugene M. Chow - Stanford CA, US
David K. Fork - Los Altos CA, US
Thomas Hantschel - Menlo Park CA, US
Koenraad F. Van Schuylenbergh - Sunnyvale CA, US
Christopher L. Chua - San Jose CA, US

Assignee:

Xerox Corporation - Stamford CT

International Classification:

H01L 23/48

US Classification:

257773, 257750, 257735, 438666

Abstract:

Lithographically defined and etched spring structures are produced by various methods such that they avoid the formation of a plated metal wedge on an underside of the spring structure after release. A post is utilized to offset the spring from an underlying substrate by a distance greater than the thickness of the plated metal. A trench is etched into the substrate below the spring to provide clearance during deflection of the spring. Another spring includes a knee (bend) that provides the necessary clearance during deflection. A plating process is limited to the upper side of another spring. A released spring is used as a shadow mask for patterning resist that prevents wedge formation during plating. Various tip arrangements are disclosed that can be utilized with each spring structure.

US Patent:

7018877, Mar 28, 2006

Filed:

Sep 28, 2004

Appl. No.:

10/950413

Inventors:

William Wong - San Carlos CA, US
Chinwen Shih - Santa Clara CA, US
Rene A. Lujan - Sunnyvale CA, US
Eugene Chow - Mountain View CA, US

Assignee:

Palo Alto Research Center - Palo Alto CA

International Classification:

H01L 21/77
H01L 29/786

US Classification:

438158, 257288

Abstract:

Various exemplary embodiments of the systems and methods according to this invention provide for a method of producing a self-aligned thin film transistor, the transistor including a metal layer covering at least a portion of a doped layer, the doped layer covering at least a portion of a dielectric layer, a strain being created in the metal layer, the method includes etching an exposed portion of the doped layer to create a defect at an interface between the doped layer and the dielectric layer so as to initiate a delamination of the doped layer from the dielectric layer. The delamination of the doped layer from the dielectric layer is stopped when the defect propagates into an interface between the doped layer and the dielectric layer that has an adhesive energy that is greater than the strain of the metal layer.

US Patent:

7121859, Oct 17, 2006

Filed:

Sep 13, 2005

Appl. No.:

11/226186

Inventors:

Koenraad F. Van Schuylenbergh - Sunnyvale CA, US
Armin R. Völkel - Mountain View CA, US
Thomas H. DiStefano - Monte Sereno CA, US
Michel A. Rosa - SanJose CA, US
David K. Fork - Los Altos CA, US
Eugene M. Chow - Mountain View CA, US
Meng H. Lean - Santa Clara CA, US

Assignee:

Palo Alto Research Center Incorporated - Palo Alto CA

International Classification:

H01R 13/15

US Classification:

439260, 439498, 439 67, 361803, 361261, 361788

Abstract:

A data transmission interconnect assembly capable of transmission speeds in excess of 40 Gbps in which, for example, a line-card is detachably coupled to a backplane using flexible flat cables that are bent to provide a continuous, smooth curve between the connected boards, and connected by a connection apparatus that employs cable-to-cable interface members that are transparent to the transmitted signal waves. Microspring interface members are formed on the contact structure pressed against the cables to provide interface arrangements that are smaller than a wavelength of the transmitted signal. A connector apparatus uses a cam mechanism to align the cables, and then to press the contact structure, having the microspring interface members formed thereon, against the cables. An alterative contact structure uses anisotropic conductive film.