Eun Kyoung Row from 1973 N Star Cir, San Jose, CA 95131, age 66, Phone: (408)2634141

Us Patents

Method For Grading Surface Topography For Improved Step Coverage And Planarization
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US Patent:

6569295, May 27, 2003
Filed:

Mar 20, 2001
Appl. No.:

09/812608
Inventors:

Cherngye Hwang - San Jose CA
Eun Kyoung Row - San Jose CA
Ning Shi - San Jose CA
Assignee:

International Business Machines Corporation - Armonk NY
International Classification:

C23F 100
US Classification:

2041923, 20419234, 20419235, 216 66, 216 67, 216 22
Abstract:

A method is provided for grading the surface topography of a surface to improve step coverage for an overcoat. In accordance with one aspect of the present invention, an ABS of a slider and sensitive element of a magnetic head is graded to provide better step coverage of an overcoat of ultra-thin DLC film. After lapping the ABS, a thin film is deposited on the lapped surface to cover any scratches, irregularities, and steps. The thin film is sputter etched at a glancing angle to grade the topography of the slider ABS. Sputtering at a glancing angle removes the thin film in planar regions faster than the thin film under the shadow of the glancing angle, which is near surface irregularities. The graded surface is then covered by a DLC deposition.

Method Of Fabricating Slider Pads For A Transducer Operating With Moving Magnetic Media
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US Patent:

6793778, Sep 21, 2004
Filed:

Jul 15, 2002
Appl. No.:

10/196006
Inventors:

Detlef Gador - Mainz, DE
Cherngye Hwang - San Jose CA
Eun Kyoung Row - San Jose CA
Ning Shi - San Jose CA
Assignee:

Hitachi Global Storage Technologies Netherlands N.V. - Amsterdam
International Classification:

C23C 1434
US Classification:

20419211, 20419212, 216 12, 216 52, 216 58, 216 67, 216 83, 427402
Abstract:

A method for fabricating a transducer with landing pads without edge fences is described. Preferably an adhesion layer and then the pad layer are deposited in voids in a photoresist. The thickness of the masking layer on the surface of the pad layer should be sufficient to protect pad layer during the subsequent ashing step, but the thickness of the masking material at the sidewalls on the pad layer fences should be thin enough so that the fences are not protected during ashing. After stripping the photoresist material, the structure is ashed preferably by an oxygen-containing plasma. The ashing process, with assistance from mechanical abrasion, removes the fence structures on the pad layer, since the thinner masking layer at the sidewalls provides less protection to the fence structures than is provided to the bulk of the pad layer where the masking layer is thicker.

Planarization Process For Thin Film Surfaces
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US Patent:

6922890, Aug 2, 2005
Filed:

Nov 15, 2002
Appl. No.:

10/295382
Inventors:

Qing Dai - San Jose CA, US
Jennifer Qing Lu - San Jose CA, US
Dennis Richard McKean - Milpitas CA, US
Eun Row - San Jose CA, US
Li Zheng - Campbell CA, US
Assignee:

International Business Machines Corporation - Armonk NY
International Classification:

H05K003/30
US Classification:

29841, 29855, 29856, 29858, 29867, 29883, 29885, 156268, 156344, 4272071, 42720808, 2642721, 26427211, 26427215, 438455, 438458, 438976
Abstract:

A method is provided for planarization of structures which minimizes step heights, reduces process steps, improves cleanliness, and provides increased ease of debond. Structures are placed with working surfaces facing down onto an adhesive layer such that structures remain fixed during heating. A bi-layer encapsulating film is used to achieve planarization. A carrier is bi-laminated with a thermoplastic film layer followed by a chemically inert protective polymer film layer that can withstand etch and cleaning processes. The thermoplastic layer is laminated on top of the carrier; the polymer layer is laminated on top of the joined thermoplastic layer and carrier. The carrier with bi-layer film is then placed onto the backside of the structures to resist chemical attack from the front side during photostrip and enable planarization. When heat is applied, the bi-layer encapsulating film melts and pushes the polymer layer into the gaps between structures thereby achieving complete planarization.

Planarization In An Encapsulation Process For Thin Film Surfaces
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US Patent:

7223350, May 29, 2007
Filed:

Mar 29, 2002
Appl. No.:

10/109929
Inventors:

Ping-Wei Chang - San Jose CA, US
Brad Lee Jackson - San Diego CA, US
Bulent Nihat Kurdi - San Jose CA, US
Jennifer Lu - San Jose CA, US
Dennis Richard McKean - San Jose CA, US
Eun Kyoung Row - San Jose CA, US
Assignee:

International Business Machines Corporation - Armonk NY
International Classification:

B44C 1/22
US Classification:

216 22
Abstract:

A process to reduce step heights in planarization of thin film carriers in an encapsulation system. The improvements include using an adhesive tape having a thinner adhesive thickness and a stiffer tape for the film sealing the encapsulant on the carrier to result in a low step height surface transition between the carrier and the cured encapsulant. The composition of the encapsulant is modified to reduce the shrinkage upon curing of the encapsulant. The encapsulant may include an absorbent that absorbs the irradiation and cause the top surface to harden first compared to the bulk of the encapsulant, and/or a gas-emitting additive that creates gaseous products that expand upon irradiation to thereby reduce the shrinkage of the encapsulant upon curing. Alternatively, irradiation at very low incidence angle relative to the top surface of the encapsulant causes the top surface to harden before the bulk of the encapsulant.

Planarization Method For A Structure Having A First Surface For Etching And A Second Surface
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US Patent:

7263763, Sep 4, 2007
Filed:

Jun 27, 2005
Appl. No.:

11/168215
Inventors:

Qing Dai - San Jose CA, US
Jennifer Qing Lu - San Jose CA, US
Dennis Richard McKean - Milpitas CA, US
Eun Row - San Jose CA, US
Li Zheng - Campbell CA, US
Assignee:

International Business Machines Corporation - Armonk NY
International Classification:

G11B 5/127
H04R 31/00
US Classification:

2960316, 2960312, 2960318, 3602357, 451 5, 451 41
Abstract:

A method is provided for planarization of structures which minimizes step heights, reduces process steps, improves cleanliness, and provides increased ease of debond. Structures are placed with working surfaces facing down onto an adhesive layer such that structures remain fixed during heating. A bi-layer encapsulating film is used to achieve planarization. A carrier is bi-laminated with a thermoplastic film layer followed by a chemically inert protective polymer film layer that can withstand etch and cleaning processes. The thermoplastic layer is laminated on top of the carrier; the polymer layer is laminated on top of the joined thermoplastic layer and carrier. The carrier with bi-layer film is then placed onto the backside of the structures to resist chemical attack from the front side during photostrip and enable planarization. When heat is applied, the bi-layer encapsulating film melts and pushes the polymer layer into the gaps between structures thereby achieving complete planarization.

Method For Depositing A Thin Film Adhesion Layer
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US Patent:

7300556, Nov 27, 2007
Filed:

Aug 29, 2003
Appl. No.:

10/651632
Inventors:

Cherngye Hwang - San Jose CA, US
Eun Row - San Jose CA, US
Ning Shi - San Jose CA, US
Eric (Yongjian) Sun - San Jose CA, US
Assignee:

Hitachi Global Storage Technologies Netherlands B.V. - Amsterdam
International Classification:

C23C 14/34
US Classification:

20419211, 20419215, 20419238, 427402
Abstract:

A method of physical vapor deposition (PVD) is disclosed in which xenon is used as the operating gas in the vacuum chamber in the deposition of an adhesion layer, preferably silicon, which allows the adhesion layer to be ultra-thin with improved durability over prior art films. The use of argon as is typical in the prior art results in argon atoms being incorporated into the ultra-thin silicon film with deleterious results. In films that are only several angstroms thick, the contamination of the film with argon or other elements can yield a film with reduced adhesion performance and in some cases noble atoms such as argon can escape the film leaving voids or pinholes. The use of the larger and heavier xenon atoms in the vacuum chamber produces a substantially purer film with reduced risk of voids and pinholes. In a preferred embodiment the use of xenon as the operating gas for deposition of the silicon adhesion layer is combined with the use of a filtered cathodic arc (FCA) process to deposit the protective overcoat, preferably carbon based, on a magnetic recording head.

Improved Planarization Process For Producing Carriers With Low Step Height
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US Patent:

20060232886, Oct 19, 2006
Filed:

Jun 21, 2006
Appl. No.:

11/425666
Inventors:

Ping-Wei Chang - San Jose CA, US
Brad Jackson - San Diego CA, US
Bulent Kurdi - San Jose CA, US
Jennifer Lu - San Jose CA, US
Dennis McKean - San Jose CA, US
Eun Row - San Jose CA, US
International Classification:

G11B 5/60
US Classification:

360235800
Abstract:

A process to reduce step heights in planarization of thin film carriers in an encapsulation system. The improvements include using an adhesive tape having a thinner adhesive thickness and a stiffer tape for the film sealing the encapsulant on the carrier to result in a low step height surface transition between the carrier and the cured encapsulant. The composition of the encapsulant is modified to reduce the shrinkage upon curing of the encapsulant. The encapsulant may include an absorbent that absorbs the irradiation and cause the top surface to harden first compared to the bulk of the encapsulant, and/or a gas-emitting additive that creates gaseous products that expand upon irradiation to thereby reduce the shrinkage of the encapsulant upon curing. Alternatively, irradiation at very low incidence angle relative to the top surface of the encapsulant causes the top surface to harden before the bulk of the encapsulant.

Vibration Damper For A Multiple Disk Drive Unit
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US Patent:

54227674, Jun 6, 1995
Filed:

May 17, 1994
Appl. No.:

8/243722
Inventors:

Michael R. Hatchett - San Jose CA
John S. Heath - San Jose CA
Hubert C. Lee - San Jose CA
Eun K. Row - San Jose CA
Roger D. Spencer - San Jose CA
Michael L. Workman - San Jose CA
Assignee:

International Business Machines Corporation - Armonk NY
International Classification:

G11B 1702
US Classification:

360 9801
Abstract:

A multiple disk drive system having two disk-head assemblies (HDA) internally mounted on a rigid frame and accessible via a common industry-standard interface connector is provided. Each HDA is enclosed in a separate housing which is mounted on the disk drive system frame. A vibration damper mounted on the disk drive system frame physically contacts each HDA housing providing a spring force which minimizes the effects of shock and vibration on the operation of the HDAs. The vibration damper is coated with a low-wear, electrically insulating material to provide electrical isolation between the vibration damper and the HDAs housings. The coating material is chosen to also provide a desired coefficient of friction between the vibration damper and the HDA housings. A single electronic controller board is shared by both HDAs and is mounted on the bottom side of the frame underlying the HDAs. The controller board may implement SCSI or IPI interfaces in either differential or single-ended versions.