Feng Chen Chen

US Patent:

7663442, Feb 16, 2010

Filed:

Mar 28, 2005

Appl. No.:

11/091227

Inventors:

Zuoguo Wu - Marlborough MA, US
Feng Chen - Portland OR, US

Assignee:

Intel Corporation - Santa Clara CA

International Classification:

H03F 3/04
H03F 1/30
H03F 3/217
H03F 3/45
H03F 3/26
H03F 3/68
H03M 1/66
H03M 1/06
H03M 1/12
H03M 1/36
H02M 11/00
H03K 17/00
H03L 5/00
H03K 3/59
H03K 17/90
G11C 7/00
G11C 11/00
G01R 33/06
G01N 27/72

US Classification:

330290, 330288, 330250, 330259, 330270, 330295, 330 9, 330 51, 341159, 341155, 341144, 341156, 341118, 327103, 327334, 327124, 327307, 327511, 365205, 365158, 365171, 365173, 365148, 324251, 324225

Abstract:

According to one embodiment, a system, apparatus, and method for receiving high-speed signals using a receiver with a transconductance amplifier is presented. The apparatus comprises a transconductance amplifier to receive input voltage derived from an input signal, a clocked current comparator to receive output current from the transconductance amplifier, and a storage element to receive a binary value from the clocked current comparator.

US Patent:

7773582, Aug 10, 2010

Filed:

Nov 2, 2005

Appl. No.:

11/265379

Inventors:

Lawrence Joseph Smith - Hollis NH, US
John David Doyle - Hollis NH, US
Feng Chen - Chelmsford MA, US
Luis Zamora - Londonderry NH, US

Assignee:

Empirix Inc. - Bedford MA

International Classification:

H04L 12/66

US Classification:

370352, 370401

Abstract:

A method, apparatus and computer program product for performing dynamic Voice Over Internet Protocol (VOIP) endpoint mapping is presented. At least one on net endpoint of a VOIP call is determined. An endpoint data structure is used to store, for each on net endpoint of the call, a key and at least one of an Internet Protocol (IP) address of the end point, a phone number associated with the endpoint, and/or a display name associated with the endpoint. The endpoint data structure is used to correlate call legs across a network. Heuristics of the VOIP call are determined, the heuristics including information relating to the main source call leg and the main destination call leg.

US Patent:

8329576, Dec 11, 2012

Filed:

Jul 1, 2010

Appl. No.:

12/829119

Inventors:

Lana Hiului Chan - Northborough MA, US
Feng Chen - Milpitas CA, US
Karl B. Levy - Los Altos CA, US

Assignee:

Novellus Systems, Inc. - San Jose CA

International Classification:

H01L 21/443

US Classification:

438656, 257E21168

Abstract:

Methods of improving the uniformity and adhesion of low resistivity tungsten films are provided. Low resistivity tungsten films are formed by exposing the tungsten nucleation layer to a reducing agent in a series of pulses before depositing the tungsten bulk layer. According to various embodiments, the methods involve reducing agent pulses with different flow rates, different pulse times and different interval times.

US Patent:

20120199887, Aug 9, 2012

Filed:

Feb 3, 2011

Appl. No.:

13/020748

Inventors:

Lana Chan - Northborough MA, US
Feng Chen - Milpitas CA, US
Roey Shaviv - Palo Alto CA, US

International Classification:

H01L 29/772
C23C 16/46
C23C 16/44
H01L 21/28
C23C 16/06

US Classification:

257288, 438680, 118725, 118697, 257E21158, 257E29242

Abstract:

Methods, apparatus, and systems for depositing tungsten having tailored stress levels are provided. According to various embodiments, the methods involve depositing high stress or low stress tungsten films. In certain embodiments depositing high stress tungsten involves a multi-stage chemical vapor deposition (CVD) process including a low temperature deposition followed by a high temperature deposition. In certain embodiments depositing low stress tungsten involves a CVD process using a relatively low tungsten precursor flow. Also provided are new classes of high and low stress tungsten films, which may also have low resistivity and/or high reflectivity. Also provided are integration methods involving depositing high or low stress tungsten, for example as contacts and/or metal gates, and semiconductor devices incorporating the tungsten films.

US Patent:

20130043119, Feb 21, 2013

Filed:

Aug 17, 2012

Appl. No.:

13/588941

Inventors:

Yashen Xia - Newton MA, US
Feng Chen - Belmont MA, US

International Classification:

B01J 19/08

US Classification:

204165, 42218604, 42218603

Abstract:

Provided are electronegative-ion-aided methods and apparatus to achieve reduction of carbon dioxide gas into useful products. In one embodiment, using different methods of discharge, the electronegative gases forms non-equilibrium electronegative ions, so that carbon dioxide reduction occurs for the production of organic compounds. When carbon dioxide is introduced into the container containing at least one electronegative gas, such as water, ammonia, bromine or iodine vapor, it reacts to form organic compounds, such as ethanol, methanol, and oxalic acid in the case of water, urea in the case of ammonia, and tetraiodomethane in the case of iodine.

US Patent:

51149052, May 19, 1992

Filed:

Mar 8, 1990

Appl. No.:

7/490752

Inventors:

Bill C. Giessen - Cambridge MA
Robert S. Markiewicz - Lexington MA
Feng Chen - Boston MA

Assignee:

Northeastern University - Boston MA

International Classification:

H01L 3912
B06B 102

US Classification:

505 1

Abstract:

A method of processing polycrystalline material by performing multi-axis crystal alignment utilizing anisotropies in the crystalline structure including the step of providing a polycrystalline material in a fluid suspension or malleable form having a magnetic moment. An external force to which the material is reactive is applied to align the individual crystals along a first axis. A magnetic field is applied to orient the magnetic moment of the crystals along a second axis, transverse to the first axis. The crystalline material may have a magnetic moment associated with a rare earth element of the material.

Address:

4 Trailside Dr, Chelmsford, MA 01824

Phone:

(978)2563921

VIN:

JTMBK35V375022144

Make:

TOYOTA

Model:

RAV4

Year:

2007