Feng Y Chen

US Patent:

7323439, Jan 29, 2008

Filed:

Sep 19, 2001

Appl. No.:

09/960708

Inventors:

Gerald R. Crabtree - Woodside CA, US
Isabella Graef - Woodside CA, US
Feng Chen - Palo Alto CA, US

Assignee:

The Board of Trustees of the Leland Stanford Junior University - Palo Alto CA

International Classification:

A61K 31/00
A61K 31/70
C12N 5/00

US Classification:

514 1, 514 2, 435 6, 435 71, 435377

Abstract:

Methods and compositions for modulating angiogenesis in a host are provided. In the subject methods, an effective amount of Ca/calcineurin/NF-ATc signaling pathway modulatory agent is administered to the host. In many embodiments, the Ca/calcineurin/NF-ATc signaling pathway modulatory agent is an NF-ATc antagonist, e. g. , in those embodiments of inhibiting angiogenesis. The subject methods find use in a variety of different applications, including the inhibition of tumor growth and the treatment of disease conditions characterized by tumor presence. Also provided are methods of screening for agents that inhibit angiogenesis by modulating the Ca/calcineurin/NF-ATc signaling pathway.

US Patent:

D680860, Apr 30, 2013

Filed:

Jun 13, 2012

Appl. No.:

29/424621

Inventors:

Martin Schulter - Greenbrae CA, US
Feng Yi Chen - Burlingame CA, US

Assignee:

Nowpak, Inc. - Burlingame CA

International Classification:

0903

US Classification:

D 9426, D9420

US Patent:

D681446, May 7, 2013

Filed:

Jun 13, 2012

Appl. No.:

29/424623

Inventors:

Martin Schulter - Greenbrae CA, US
Feng Yi Chen - Burlingame CA, US

Assignee:

Nowpak Inc. - Burlingame CA

International Classification:

0903

US Classification:

D 9426, D9420, D9761

US Patent:

D681447, May 7, 2013

Filed:

Jun 13, 2012

Appl. No.:

29/424624

Inventors:

Martin Schulter - Greenbrae CA, US
Feng Yi Chen - Burlingame CA, US

Assignee:

Nowpak Inc. - Burlingame CA

International Classification:

0903

US Classification:

D 9426, D9420

US Patent:

20120329678, Dec 27, 2012

Filed:

Jun 27, 2012

Appl. No.:

13/535167

Inventors:

Feng Chen - Castro Valley CA, US
Ze Peng - Moraga CA, US
Zhiying Zhao - Danville CA, US
Nandita Nath - Fremont CA, US
Jeff L. Froula - Walnut Creek CA, US

Assignee:

THE REGENTS OF THE UNIVERSITY OF CALIFORNIA - Oakland CA

International Classification:

C40B 50/06
C40B 40/06

US Classification:

506 16, 506 26

Abstract:

The present disclosure provides methods for generating mate-pair libraries using a recombinase/recombination site system. The method allows for increased insert size, improved efficiency and simplicity of the steps involved, and improved data generation. Mate-pair libraries are helpful in providing positional information for the assembly of sequence data from short read sequencing platforms. The disclosure also embodies the mate-pair libraries as generated from these methods.

US Patent:

20210351072, Nov 11, 2021

Filed:

May 6, 2020

Appl. No.:

16/867990

Inventors:

- Santa Clara CA, US
Christina L. Engler - Union City CA, US
Gang Shen - San Jose CA, US
Feng Chen - San Jose CA, US
Tae Hong Ha - San Jose CA, US
Xianmin Tang - San Jose CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 21/768

Abstract:

Described are methods for doping barrier layers such as tantalum (Ta), tantalum nitride (TaN), tantalum carbide (TaC), niobium (Nb), niobium nitride (NbN), manganese (Mn), manganese nitride (MnN), titanium (Ti), titanium nitride (TiN), molybdenum (Mo), and molybdenum nitride (MoN), and the like. Dopants may include one or more of one or more of ruthenium (Ru), manganese (Mn), niobium (Nb), cobalt (Co), vanadium (V), copper (Cu), aluminum (Al), carbon (C), oxygen (O), silicon (Si), molybdenum (Mo), and the like. The doped barrier layer provides improved adhesion at a thickness of less than about 15 Å.

US Patent:

20210062330, Mar 4, 2021

Filed:

Aug 25, 2020

Appl. No.:

17/002296

Inventors:

- Santa Clara CA, US
Yufei HU - Fremont CA, US
Gang SHEN - San Jose CA, US
Feng CHEN - SAN JOSE CA, US

International Classification:

C23C 16/06
C23C 16/52
C23C 16/455

Abstract:

A method for capping a copper surface on a substrate. In embodiments, the methods include exposing a substrate including a copper surface and a dielectric surface to a cobalt precursor gas and a process gas including a reducing agent to selectively form a first cobalt capping layer over the copper surface while leaving exposed the dielectric surface during a vapor deposition process, wherein a flow rate ratio of process gas to cobalt precursor gas is at least 300:1.