Feng Liu Xu Chen

US Patent:

7663442, Feb 16, 2010

Filed:

Mar 28, 2005

Appl. No.:

11/091227

Inventors:

Zuoguo Wu - Marlborough MA, US
Feng Chen - Portland OR, US

Assignee:

Intel Corporation - Santa Clara CA

International Classification:

H03F 3/04
H03F 1/30
H03F 3/217
H03F 3/45
H03F 3/26
H03F 3/68
H03M 1/66
H03M 1/06
H03M 1/12
H03M 1/36
H02M 11/00
H03K 17/00
H03L 5/00
H03K 3/59
H03K 17/90
G11C 7/00
G11C 11/00
G01R 33/06
G01N 27/72

US Classification:

330290, 330288, 330250, 330259, 330270, 330295, 330 9, 330 51, 341159, 341155, 341144, 341156, 341118, 327103, 327334, 327124, 327307, 327511, 365205, 365158, 365171, 365173, 365148, 324251, 324225

Abstract:

According to one embodiment, a system, apparatus, and method for receiving high-speed signals using a receiver with a transconductance amplifier is presented. The apparatus comprises a transconductance amplifier to receive input voltage derived from an input signal, a clocked current comparator to receive output current from the transconductance amplifier, and a storage element to receive a binary value from the clocked current comparator.

US Patent:

8329576, Dec 11, 2012

Filed:

Jul 1, 2010

Appl. No.:

12/829119

Inventors:

Lana Hiului Chan - Northborough MA, US
Feng Chen - Milpitas CA, US
Karl B. Levy - Los Altos CA, US

Assignee:

Novellus Systems, Inc. - San Jose CA

International Classification:

H01L 21/443

US Classification:

438656, 257E21168

Abstract:

Methods of improving the uniformity and adhesion of low resistivity tungsten films are provided. Low resistivity tungsten films are formed by exposing the tungsten nucleation layer to a reducing agent in a series of pulses before depositing the tungsten bulk layer. According to various embodiments, the methods involve reducing agent pulses with different flow rates, different pulse times and different interval times.

US Patent:

20120199887, Aug 9, 2012

Filed:

Feb 3, 2011

Appl. No.:

13/020748

Inventors:

Lana Chan - Northborough MA, US
Feng Chen - Milpitas CA, US
Roey Shaviv - Palo Alto CA, US

International Classification:

H01L 29/772
C23C 16/46
C23C 16/44
H01L 21/28
C23C 16/06

US Classification:

257288, 438680, 118725, 118697, 257E21158, 257E29242

Abstract:

Methods, apparatus, and systems for depositing tungsten having tailored stress levels are provided. According to various embodiments, the methods involve depositing high stress or low stress tungsten films. In certain embodiments depositing high stress tungsten involves a multi-stage chemical vapor deposition (CVD) process including a low temperature deposition followed by a high temperature deposition. In certain embodiments depositing low stress tungsten involves a CVD process using a relatively low tungsten precursor flow. Also provided are new classes of high and low stress tungsten films, which may also have low resistivity and/or high reflectivity. Also provided are integration methods involving depositing high or low stress tungsten, for example as contacts and/or metal gates, and semiconductor devices incorporating the tungsten films.