Feng Chen

US Patent:

6853578, Feb 8, 2005

Filed:

Mar 18, 2002

Appl. No.:

10/101075

Inventors:

Wei Zhang - Sunnyvale CA, US
Feng Chen - Fremont CA, US
Jianbin Wu - Fremont CA, US

Assignee:

Piconetics, Inc. - Fremont CA

International Classification:

G11C007/00

US Classification:

365154, 365188, 365174, 36518901, 36518903

Abstract:

A single bit line, pulse-operated memory cell. The memory cell includes a first and second inverter, write access and feedback-control transistors, and read access transistor and read buffer transistors. The output of the first inverter is connected to the input of the second inverter and the output of the second inverter is connected to the input of the first inverter through the channel of the feedback-control transistor. The write access and feedback-control transistors are opposite types, and their gates are connected together so that when the feedback control transistor is on the write-access transistor is off and visa versa. Writing the cell thus avoids contending the with the on-transistor of the second inverter. The output of the cell is sensed by the gate of the buffer transistor and coupling the output of the buffer transistor through the read access transistor to the read output line.

US Patent:

7323439, Jan 29, 2008

Filed:

Sep 19, 2001

Appl. No.:

09/960708

Inventors:

Gerald R. Crabtree - Woodside CA, US
Isabella Graef - Woodside CA, US
Feng Chen - Palo Alto CA, US

Assignee:

The Board of Trustees of the Leland Stanford Junior University - Palo Alto CA

International Classification:

A61K 31/00
A61K 31/70
C12N 5/00

US Classification:

514 1, 514 2, 435 6, 435 71, 435377

Abstract:

Methods and compositions for modulating angiogenesis in a host are provided. In the subject methods, an effective amount of Ca/calcineurin/NF-ATc signaling pathway modulatory agent is administered to the host. In many embodiments, the Ca/calcineurin/NF-ATc signaling pathway modulatory agent is an NF-ATc antagonist, e. g. , in those embodiments of inhibiting angiogenesis. The subject methods find use in a variety of different applications, including the inhibition of tumor growth and the treatment of disease conditions characterized by tumor presence. Also provided are methods of screening for agents that inhibit angiogenesis by modulating the Ca/calcineurin/NF-ATc signaling pathway.

US Patent:

RE40661, Mar 10, 2009

Filed:

Sep 21, 2001

Appl. No.:

09/996086

Inventors:

Dong-seek Park - Suwon-si, KR
John Villasenor - Santa Monica CA, US
Feng Chen - Irvine CA, US
Max Luttrell - Venice CA, US
Brendan Dowling - Malibu CA, US

Assignee:

Samsung Electronics Co., Ltd. - Suwon-si
Regents of the University of California - Oakland CA

International Classification:

G06F 11/00

US Classification:

714825, 714775, 714746, 714748, 714751, 375364, 375368

Abstract:

An error protection method for multimedia improves data recovery and channel throughput in channels which cause a random error and a burst error by using a rate compatible punctured convolutional code (RCPC) and an automatic retransmission on request (ARQ). In a process of decoding a plurality of packets of given information, the error protection method includes the steps of a) decoding one of the plurality of packets, b) decoding another packet when an error occurs during the decoding in step a), c) decoding a combination of the packets from steps a) and b) or a third packet when an error occurs in step b), and d) repeating step c) until the decoding error no longer occurs. The error protection method has the characteristics of both Type-1 and Type-2 ARQ methods. Therefore, one can obtain constant channel throughput in a channel containing burst errors, a channel containing random errors, and a channel in which the two types of error patterns coexist simultaneously.

US Patent:

7663442, Feb 16, 2010

Filed:

Mar 28, 2005

Appl. No.:

11/091227

Inventors:

Zuoguo Wu - Marlborough MA, US
Feng Chen - Portland OR, US

Assignee:

Intel Corporation - Santa Clara CA

International Classification:

H03F 3/04
H03F 1/30
H03F 3/217
H03F 3/45
H03F 3/26
H03F 3/68
H03M 1/66
H03M 1/06
H03M 1/12
H03M 1/36
H02M 11/00
H03K 17/00
H03L 5/00
H03K 3/59
H03K 17/90
G11C 7/00
G11C 11/00
G01R 33/06
G01N 27/72

US Classification:

330290, 330288, 330250, 330259, 330270, 330295, 330 9, 330 51, 341159, 341155, 341144, 341156, 341118, 327103, 327334, 327124, 327307, 327511, 365205, 365158, 365171, 365173, 365148, 324251, 324225

Abstract:

According to one embodiment, a system, apparatus, and method for receiving high-speed signals using a receiver with a transconductance amplifier is presented. The apparatus comprises a transconductance amplifier to receive input voltage derived from an input signal, a clocked current comparator to receive output current from the transconductance amplifier, and a storage element to receive a binary value from the clocked current comparator.

US Patent:

7772114, Aug 10, 2010

Filed:

Dec 5, 2007

Appl. No.:

11/951236

Inventors:

Lana Hiului Chan - Santa Clara CA, US
Feng Chen - Milpitas CA, US
Karl B. Levy - Los Altos CA, US

Assignee:

Novellus Systems, Inc. - San Jose CA

International Classification:

H01L 21/443

US Classification:

438656, 438680, 438685, 257E21168

Abstract:

Methods of improving the uniformity and adhesion of low resistivity tungsten films are provided. Low resistivity tungsten films are formed by exposing the tungsten nucleation layer to a reducing agent in a series of pulses before depositing the tungsten bulk layer. According to various embodiments, the methods involve reducing agent pulses with different flow rates, different pulse times and different interval times.

US Patent:

7773582, Aug 10, 2010

Filed:

Nov 2, 2005

Appl. No.:

11/265379

Inventors:

Lawrence Joseph Smith - Hollis NH, US
John David Doyle - Hollis NH, US
Feng Chen - Chelmsford MA, US
Luis Zamora - Londonderry NH, US

Assignee:

Empirix Inc. - Bedford MA

International Classification:

H04L 12/66

US Classification:

370352, 370401

Abstract:

A method, apparatus and computer program product for performing dynamic Voice Over Internet Protocol (VOIP) endpoint mapping is presented. At least one on net endpoint of a VOIP call is determined. An endpoint data structure is used to store, for each on net endpoint of the call, a key and at least one of an Internet Protocol (IP) address of the end point, a phone number associated with the endpoint, and/or a display name associated with the endpoint. The endpoint data structure is used to correlate call legs across a network. Heuristics of the VOIP call are determined, the heuristics including information relating to the main source call leg and the main destination call leg.

US Patent:

D634248, Mar 15, 2011

Filed:

Feb 12, 2010

Appl. No.:

29/355777

Inventors:

Feng Li Chen - Alhambra CA, US

International Classification:

1216

US Classification:

D12177

US Patent:

8058170, Nov 15, 2011

Filed:

Mar 19, 2009

Appl. No.:

12/407541

Inventors:

Anand Chandrashekar - Sunnyvale CA, US
Mirko Glass - Freital, DE
Raashina Humayun - Fremont CA, US
Michael Danek - Cupertino CA, US
Kaihan Ashtiani - Cupertino CA, US
Feng Chen - Sunnyvale CA, US
Lana Hiului Chan - Northborough MA, US
Anil Mane - Sunnyvale CA, US

Assignee:

Novellus Systems, Inc. - San Jose CA

International Classification:

H01L 21/44

US Classification:

438677, 438685, 257E21575

Abstract:

Methods of forming low resistivity tungsten films with good uniformity and good adhesion to the underlying layer are provided. The methods involve forming a tungsten nucleation layer using a pulsed nucleation layer process at low temperature and then treating the deposited nucleation layer prior to depositing the bulk tungsten fill. The treatment operation lowers resistivity of the deposited tungsten film. In certain embodiments, the depositing the nucleation layer involves a boron-based chemistry in the absence of hydrogen. Also in certain embodiments, the treatment operations involve exposing the nucleation layer to alternating cycles of a reducing agent and a tungsten-containing precursor. The methods are useful for depositing films in high aspect ratio and/or narrow features. The films exhibit low resistivity at narrow line widths and excellent step coverage.