Feng Li

US Patent:

6516209, Feb 4, 2003

Filed:

Feb 6, 2001

Appl. No.:

09/778618

Inventors:

Xuefeng Cheng - Milpitas CA
Xiaorong Xu - Menlo Park CA
Shuoming Zhou - Cupertino CA
Lai Wang - Cupertino CA
Ming Wang - San Jose CA
Feng Li - San Jose CA
Guobao Hu - San Jose CA

Assignee:

Photonify Technologies, Inc. - Fremont CA

International Classification:

A61B 500

US Classification:

600323, 600310, 600473, 600476, 2502521

Abstract:

The present invention generally relates to optical imaging systems and methods for providing images of two-dimensional and/or three-dimensional distribution of properties of chromophores in various physiological media. More particularly, the present invention relates to optical imaging systems, optical probes thereof, and methods therefore utilizing self-calibration of their output signals. A typical self-calibrating optical imaging system includes at least one wave source, at least one wave detector, a signal analyzer, a signal processor, and an image processor. The signal analyzer receives, from the wave detector, an output signal representative of the distribution of the chromophores or their properties in target areas of the medium. The signal analyzer analyzes amplitudes of the output signal and selects multiple points of the output signal having substantially similar amplitudes. The signal processor calculates a baseline corresponding to a representative amplitude of the similar amplitudes and provides a self-calibrated output signal.

US Patent:

6735458, May 11, 2004

Filed:

Oct 1, 2002

Appl. No.:

10/262523

Inventors:

Xuefeng Cheng - Milpitas CA
Xiaorong Xu - Menlo Park CA
Shuoming Zhou - Cupertino CA
Lai Wang - Cupertino CA
Ming Wang - San Jose CA
Feng Li - San Jose CA
Guobao Hu - San Jose CA

Assignee:

Photonify Technologies, Inc. - Fremont CA

International Classification:

A61B 500

US Classification:

600323, 600310, 600473, 600476

Abstract:

The present invention generally relates to optical imaging systems and methods for providing images of two-dimensional and/or three-dimensional distribution of properties of chromophores in various physiological media. More particularly, the present invention relates to optical imaging systems, optical probes thereof, and methods therefor utilizing self-calibration of their output signals. A typical self-calibrating optical imaging system includes at least one wave source, at least one wave detector, a signal analyzer, a signal processor, and an image processor. The signal analyzer receives, from the wave detector, an output signal representative of the distribution of the chromophores or their properties in target areas of the medium. The signal analyzer analyzes amplitudes of the output signal and selects multiple points of the output signal having substantially similar amplitudes. The signal processor calculates a baseline corresponding to a representative amplitude of the similar amplitudes and provides a self-calibrated output signal.

US Patent:

7212454, May 1, 2007

Filed:

Jun 22, 2005

Appl. No.:

11/158396

Inventors:

Bendik Kleveland - Santa Clara CA, US
Tae Hee Lee - Saratoga CA, US
Seung Geon Yu - San Ramon CA, US
Chia Yang - San Jose CA, US
Feng Li - San Jose CA, US
Xiaoyu Yang - Campbell CA, US

Assignee:

SanDisk 3D LLC - Sunnyvale CA

International Classification:

G11C 29/00

US Classification:

365200, 365175

Abstract:

A method and apparatus for programming a memory array are disclosed. In one embodiment, after each word line is programmed, an attempt is made to detect a defect on that word line. If a defect is detected, the word line is repaired with a redundant word line. The word lines are then reprogrammed and rechecked for defects. In another embodiment, after each word line is programmed, an attempt is made to detect a defect on that word line. If a defect is detected, that word line is repaired along with a previously-programmed adjacent word line. In yet another embodiment, after each word line is programmed, an attempt is made to detect a defect on that word line and a previously-programmed adjacent word line. If a defect is detected on that word line, that word line and the previously-programmed adjacent word line are repaired with redundant word lines.

US Patent:

7451412, Nov 11, 2008

Filed:

Aug 4, 2005

Appl. No.:

11/198451

Inventors:

Larry G. Jones - San Jose CA, US
Feng Li - San Jose CA, US
Mohan Rangan Govindaraj - Menlo Park CA, US
Bradley R. Roetcisoender - Kirkland WA, US
Michael G. Weaver - Menlo Park CA, US

Assignee:

Synopsys, Inc. - Mountain View CA

International Classification:

G06F 17/50

US Classification:

716 4, 716 5, 716 6, 703 14

Abstract:

One embodiment of the present invention provides a system that speeds up timing analysis by reusing delays computed for isomorphic subcircuit. During operation, the system receives a circuit block to be analyzed, wherein the circuit block is in the form of a netlist. The system then subdivides the circuit block into a set of subcircuits. The subcircuits are then partitioned into equivalence classes, which contain subcircuits which are topologically isomorphic to each other. Next, the system performs a timing analysis by tracing paths through a timing graph for the circuit block. During this timing analysis, whenever a delay is required for a subcircuit, the system determines if a corresponding delay has been already computed for the equivalence class associated with the subcircuit. If so, the system reuses the delay. If not, the system computes the delay for the subcircuit, and then associates the computed delay with the equivalence class so that the computed delay can be reused for isomorphic subcircuits.

US Patent:

7662941, Feb 16, 2010

Filed:

Jan 17, 2006

Appl. No.:

11/332943

Inventors:

Ihor R. Lemischka - Princeton NJ, US
Christoph Schaniel - Princeton NJ, US
Feng Li - Plainsboro NJ, US
Xenla Schafer - Princeton NJ, US
Patrick J. Paddison - Oyster Bay NY, US

Assignee:

The Trustees of the University of Princeton - Princeton University - Princeton NJ

International Classification:

C07H 21/04
A01N 63/00
C12N 15/74

US Classification:

536 231, 4353201, 424 932, 424 9321

Abstract:

The present invention relates to methods and compositions for assaying embryonic stem cell maintenance. In particular, the present invention provides reporter constructs for stem cell pluripotency and differentiation and cells and organisms containing such constructs.

US Patent:

7781805, Aug 24, 2010

Filed:

Feb 6, 2009

Appl. No.:

12/367214

Inventors:

Xiaoyu Yang - Campbell CA, US
Feng Li - San Jose CA, US
Albert T. Meeks - Sunnyvale CA, US

Assignee:

SanDisk 3D LLC - Milpitas CA

International Classification:

H01L 29/66

US Classification:

257209, 257530, 257E29081, 257E29085, 257E29091, 257E2933, 438597, 365103

Abstract:

A memory array having memory cells comprising a diode and an antifuse can be made smaller and programmed at lower voltage by using an antifuse material having a higher dielectric constant and a higher acceleration factor than those of silicon dioxide, and by using a diode having a lower band gap than that of silicon. Such memory arrays can be made to have long operating lifetimes by using the high acceleration factor and lower band gap materials. Antifuse materials having dielectric constants between 5 and 27, for example, hafnium silicon oxynitride or hafnium silicon oxide, are particularly effective. Diode materials with band gaps lower than that of silicon, such as germanium or a silicon-germanium alloy, are particularly effective.

US Patent:

8314023, Nov 20, 2012

Filed:

Feb 6, 2009

Appl. No.:

12/367258

Inventors:

Xiaoyu Yang - Campbell CA, US
Roy E. Scheuerlein - Cupertino CA, US
Feng Li - San Jose CA, US
Albert T. Meeks - Sunnyvale CA, US

Assignee:

SanDisk 3D LLC - Milpitas CA

International Classification:

H01L 21/44

US Classification:

438597, 257530, 257E2933, 257E29081, 257E29085

Abstract:

Methods involve using a memory array having memory cells comprising a diode and an antifuse, in which the antifuse is made smaller and programmed at lower voltage by using an antifuse material having a higher dielectric constant and a higher acceleration factor than those of silicon dioxide, and in which the diode is made of a material having a lower band gap than that of silicon. Such memory arrays can be made to have long operating lifetimes by using the high acceleration factor and lower band gap materials. Antifuse materials having dielectric constants between 5 and 27, for example, hafnium silicon oxynitride or hafnium silicon oxide, are particularly effective. Diode materials with band gaps lower than that of silicon, such as germanium or a silicon-germanium alloy, are particularly effective.

US Patent:

8350299, Jan 8, 2013

Filed:

Jul 14, 2010

Appl. No.:

12/836320

Inventors:

Xiaoyu Yang - Campbell CA, US
Roy E. Scheuerlein - Cupertino CA, US
Feng Li - San Jose CA, US
Albert T. Meeks - Sunnyvale CA, US

Assignee:

SanDisk 3D LLC - Milpitas CA

International Classification:

H01L 29/66

US Classification:

257209, 257530, 257E27111

Abstract:

A memory cell is provided that includes a diode and a resistance-switching material layer coupled in series with the diode. The resistance-switching material layer: (a) has a dielectric constant in the range of about 5 to about 27, and (b) includes a material from the family consisting of XO, wherein X represents an element from the family consisting of Hf and Zr, and wherein the subscripts v and w have non-zero values that form a stable compound. Other aspects are also provided.