Feng L Li

US Patent:

20060179729, Aug 17, 2006

Filed:

Nov 21, 2003

Appl. No.:

10/718349

Inventors:

Feng Li - Parsippany NJ, US

International Classification:

E04H 9/02

US Classification:

052167700

Abstract:

A Shock absorbing support system isolates vibrations that would otherwise pass through the important instrument mounted on the vibration source. The isolation includes springs and dampers under the bottom of the instrument while dampers around tops of the instrument. The combination of the springs and the dampers results in a dissipation of kinetic energy caused by vibrations that would otherwise pass through the instrument and cause significant dynamic load and damages to the support and the instrument.

US Patent:

20210226054, Jul 22, 2021

Filed:

Apr 7, 2021

Appl. No.:

17/224171

Inventors:

- Austin TX, US
Feng Li - Austin TX, US
Vishnu Khemka - Chandler AZ, US
Moaniss Zitouni - Gilbert AZ, US
Tanuj Saxena - Chandler AZ, US

International Classification:

H01L 29/78
H01L 21/8234
H01L 27/088
H01L 29/10
H01L 29/66

Abstract:

A MOSFET includes a substrate having a body region of a first conductivity type. A main field effect transistor (mainFET) and a mirror device are formed in the substrate. The mainFET includes first gate trenches, first source regions of a second conductivity type adjacent to the first gate trenches, and first body implant regions of the first conductivity type extending into the body region adjacent to and interposed between the first source regions. The mirror device includes second gate trenches, second source regions of the second conductivity type adjacent to the second gate trenches, second body implant regions of the first conductivity type extending into the body region adjacent to and interposed between the second source regions, and link elements of the first conductivity type interconnecting pairs of the second body implant regions.

US Patent:

20200373426, Nov 26, 2020

Filed:

May 20, 2019

Appl. No.:

16/417243

Inventors:

- Austin TX, US
Feng Li - Austin TX, US
Vishnu Khemka - Chandler AZ, US
Moaniss Zitouni - Gilbert AZ, US
Tanuj Saxena - Chandler AZ, US

International Classification:

H01L 29/78
H01L 27/088
H01L 29/10
H01L 29/66
H01L 21/8234

Abstract:

A MOSFET includes a substrate having a body region of a first conductivity type. A main field effect transistor (mainFET) and a mirror device are formed in the substrate. The mainFET includes first gate trenches, first source regions of a second conductivity type adjacent to the first gate trenches, and first body implant regions of the first conductivity type extending into the body region adjacent to and interposed between the first source regions. The mirror device includes second gate trenches, second source regions of the second conductivity type adjacent to the second gate trenches, second body implant regions of the first conductivity type extending into the body region adjacent to and interposed between the second source regions, and link elements of the first conductivity type interconnecting pairs of the second body implant regions.