Feng Miao from 624 Mystic Ln, San Mateo, CA 94404, age 42

Graphene Memristor Having Modulated Graphene Interlayer Conduction
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US Patent:

8294132, Oct 23, 2012
Filed:

Mar 30, 2010
Appl. No.:

12/750351
Inventors:

Feng Miao - Mountain View CA, US
Joshua Yang - Palo Alto CA, US
Wei Wu - Palo Alto CA, US
Shih-Yuan Wang - Palo Alto CA, US
R. Stanley Williams - Portola Valley CA, US
Assignee:

Hewlett-Packard Development Company, L.P. - Houston TX
International Classification:

H01L 29/04
H01L 47/00
H01L 29/02
US Classification:

257 3, 257 1, 257 2
Abstract:

A graphene memristor includes a first electrode, a second electrode electrically coupled to the first electrode, an active region interspersed between the first and second electrodes, a defective graphene structure that modulates a barrier height to migration of ions through the active region, fast diffusing ions that migrate under the influence an electric field to change a state of the graphene memristor, and a source that generates the electric field.

Changing A Memristor State
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US Patent:

8331131, Dec 11, 2012
Filed:

Jan 31, 2011
Appl. No.:

13/018040
Inventors:

Feng Miao - Mountain View CA, US
Jianhua Yang - Palo Alto CA, US
Gilberto Medeiros Ribeiro - Menlo Park CA, US
R. Stanley Williams - Portola Valley CA, US
Assignee:

Hewlett-Packard Development Company, L.P. - Houston TX
International Classification:

G11C 11/00
H01L 47/00
H01L 21/20
US Classification:

365148, 257 1, 257 4, 257 5, 257E45001, 257E45002, 438382
Abstract:

A method of changing a state of a memristor having a first intermediate layer, a second intermediate layer, and a third intermediate layer positioned between a first electrode and a second electrode includes applying a first pulse having a first bias voltage across the memristor, wherein the first pulse causes mobile species to flow in a first direction within the memristor and collect in the first intermediate layer thereby causing the memristor to enter into an intermediate state and applying a second pulse having a second bias voltage across the memristor, in which the second pulse causes the mobile species from the first intermediate layer to flow in a second direction within the memristor and collect in the third intermediate layer, wherein the flow of the mobile species in the second direction causes the memristor to enter into a fully changed state.

Memristive Device
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US Patent:

8546785, Oct 1, 2013
Filed:

Mar 31, 2010
Appl. No.:

12/751977
Inventors:

Jianhua Yang - Palo Alto CA, US
Feng Miao - Mountain View CA, US
Wei Wu - Palo Alto CA, US
Shih-Yuan Wang - Palo Alto CA, US
R. Stanley Williams - Portola Valley CA, US
Assignee:

Hewlett-Packard Development Company, L.P. - Houston TX
International Classification:

H01L 27/24
US Classification:

257 5, 257 2, 257 4, 257E45002, 365148, 365157, 365158, 365163
Abstract:

A memristive device includes a first electrode and a second electrode crossing the first electrode at a non-zero angle. An active region is disposed between the first and second electrodes. The active region has defects therein. Graphene or graphite is disposed between the active region and the first electrode and/or between the active region and the second electrode.

Defective Graphene-Based Memristor
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US Patent:

20110240947, Oct 6, 2011
Filed:

Apr 5, 2010
Appl. No.:

12/754300
Inventors:

Joshua Yang - Palo Alto CA, US
Feng Miao - Mountain View CA, US
Wei Wu - Palo Alto CA, US
Shih-Yuan Wang - Palo Alto CA, US
R. Stanley Williams - Portola Valley CA, US
International Classification:

H01L 47/00
US Classification:

257 3, 257E47001, 977734
Abstract:

A graphene-based memristor includes a first electrode, a defective graphene layer adjacent the first electrode, a memristive material that includes a number of ions adjacent the defective graphene layer, a second electrode adjacent the memristive material, and a voltage source that generates an electric field between the first and the second electrodes. Under the influence of the electric field, ions in the memristive material form an ion conducting channel between the second electrode and the defective graphene layer.

Multi-Level Memory Cell With Continuously Tunable Switching
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US Patent:

20130100726, Apr 25, 2013
Filed:

Oct 21, 2011
Appl. No.:

13/278581
Inventors:

Wei Yi - Mountain View CA, US
Feng Miao - Mountain View CA, US
Jianhua Yang - Palo Alto CA, US
International Classification:

G11C 11/00
G11C 7/00
US Classification:

365148, 36518916
Abstract:

The present disclosure provides a data storage device that includes multi-level memory cells. The data storage device may include circuitry configured to write data to the multi-level memory cell. The write circuitry may include compliance circuitry configured to implement continuously tunable switching. The write circuitry may be configured to select a compliance mode for the switching, the compliance mode being selected from the group comprising current compliance and voltage compliance.

Multi-Level Memory Cell With Continuously Tunable Switching
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US Patent:

20140355331, Dec 4, 2014
Filed:

Aug 21, 2014
Appl. No.:

14/464803
Inventors:

- Houston TX, US
Feng Miao - Palo Alto CA, US
Jianhua Yang - Palo Alto CA, US
Assignee:

HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. - Houston TX
International Classification:

G11C 13/00
US Classification:

365148
Abstract:

The present disclosure provides a data storage device that includes multi-level memory cells. The data storage device may include circuitry configured to write data to the multi-level memory cell. The write circuitry may include compliance circuitry configured to implement continuously tunable switching. The write circuitry may be configured to select a compliance mode for the switching, the compliance mode being selected from the group comprising current compliance and voltage compliance.

Memristor With Channel Region In Thermal Equilibrium With Containing Region
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US Patent:

20140346426, Nov 27, 2014
Filed:

Feb 29, 2012
Appl. No.:

14/371492
Inventors:

Feng Miao - Mountain View CA, US
Jianhua Yang - Palo Alto CA, US
John Paul Strachan - Millbrae CA, US
Wei Yi - Mountain View CA, US
Gilberto Medeiros Ribeiro - Palo Alto CA, US
R. Stanley Williams - Portola Valley CA, US
International Classification:

H01L 45/00
H01L 27/24
US Classification:

257 3, 438382
Abstract:

A memristor with a channel region in thermal equilibrium with a containing region. The channel region has a variable concentration of mobile ions. The containing region, formed of stoichiometric crystalline material, contains and is in thermal equilibrium with the channel region.

Memristors Having Mixed Oxide Phases
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US Patent:

20140167042, Jun 19, 2014
Filed:

Jul 14, 2011
Appl. No.:

14/232521
Inventors:

Jianhua Yang - Palo Alto CA, US
Minxian Max Zhang - Mountain View CA, US
Feng Miao - Mountain View CA, US
International Classification:

H01L 45/00
US Classification:

257 43, 438104
Abstract:

A memristor includes a first electrode; a second electrode; and a switching layer interposed between the first electrode and the second electrode, wherein the switching layer includes an electrically semiconducting or nominally insulating and weak ionic switching mixed metal oxide phase for forming at least one switching channel in the switching layer. A method of forming the memristor is also provided.