Feng Kai Wu

age ~44

from Watsonville, CA

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Also known as:

Feng K Wu
Feng C Wu
Kai Wu Feng
Fengkai C Wu
Casey F Wu
Wu Casey

Connected to:

Feng Wu Phones & Addresses

Watsonville, CA
Salinas, CA
Santa Cruz, CA
Goleta, CA

Isbn (Books And Publications)

Advances in Natural Computation: Second International Conference, ICNC 2006, Xi'an, China, September 24-28, 2006, Proceedings, Part I

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Author
Feng Wu

ISBN #
3540459014

Advances in Natural Computation: Second International Conference, ICNC 2006, Xi'an, China, September 24-28, 2006, Proceedings, Part II

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Author
Feng Wu

ISBN #
3540459073

Name / Title

Company / Classification

Phones & Addresses

Feng Wu

GREAT WALL 6023 INC

Feng Wu

FORWARD IX TRADE, LLC

Feng Yan Wu

ASIAN MAMA LLC DBA HOUSE OF ASIA

Feng Feng Wu
President

PI CORP

727 Daffodil Ct #D, Sunnyvale, CA 94086

Us Patents

Anisotropic Strain Control In Semipolar Nitride Quantum Wells By Partially Or Fully Relaxed Aluminum Indium Gallium Nitride Layers With Misfit Dislocations
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US Patent:

8481991, Jul 9, 2013
Filed:

Aug 23, 2010
Appl. No.:

12/861652
Inventors:

Hiroaki Ohta - Goleta CA, US
Feng Wu - Goleta CA, US
Anurag Tyagi - Goleta CA, US
Arpan Chakraborty - Goleta CA, US
James S. Speck - Goleta CA, US
Steven P. DenBaars - Goleta CA, US
Shuji Nakamura - Santa Barbara CA, US
Erin C. Young - Santa Barbara CA, US
Assignee:

The Regents of the University of California - Oakland CA
International Classification:

H01L 29/66
US Classification:

257 14, 257E29168, 257E2109, 438 47
Abstract:

An epitaxial structure for a III-Nitride based optical device, comprising an active layer with anisotropic strain on an underlying layer, where a lattice constant and strain in the underlying layer are partially or fully relaxed in at least one direction due to a presence of misfit dislocations, so that the anisotropic strain in the active layer is modulated by the underlying layer.

Crystal Growth Of M-Plane And Semipolar Planes Of (Al, In, Ga, B)N On Various Substrates
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US Patent:

20080163814, Jul 10, 2008
Filed:

Dec 11, 2007
Appl. No.:

11/954172
Inventors:

Kwang Choong Kim - Seoul, KR
Mathew C. Schmidt - Santa Barbara CA, US
Feng Wu - Goleta CA, US
Asako Hirai - Santa Barbara CA, US
Melvin B. McLaurin - Goleta CA, US
Steven P. DenBaars - Goleta CA, US
Shuji Nakamura - Santa Barbara CA, US
James S. Speck - Goleta CA, US
Assignee:

THE REGENTS OF THE UNIVERSITY OF CALIFORNIA - Oakland CA
International Classification:

C30B 23/04
US Classification:

117 95
Abstract:

A method of reducing threading dislocation densities in non-polar such as a- {11-20} plane and m-{1-100} plane or semi-polar such as {10-1n} plane III-Nitrides by employing lateral epitaxial overgrowth from sidewalls of etched template material through a patterned mask. The method includes depositing a patterned mask on a template material such as a non-polar or semi polar GaN template, etching the template material down to various depths through openings in the mask, and growing non-polar or semi-polar III-Nitride by coalescing laterally from the tops of the sidewalls before the vertically growing material from the trench bottoms reaches the tops of the sidewalls. The coalesced features grow through the openings of the mask, and grow laterally over the dielectric mask until a fully coalesced continuous film is achieved.

Mocvd Growth Technique For Planar Semipolar (Al, In, Ga, B)N Based Light Emitting Diodes
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US Patent:

20090310640, Dec 17, 2009
Filed:

Apr 6, 2009
Appl. No.:

12/419128
Inventors:

Hitoshi Sato - Kanagawa, JP
Roy B. Chung - Goleta CA, US
Feng Wu - Goleta CA, US
James S. Speck - Goleta CA, US
Steven P. DenBaars - Goleta CA, US
Shuji Nakamura - Santa Barbara CA, US
Assignee:

The Regents of the University of California - Oakland CA
International Classification:

H01S 5/343
H01L 29/66
H01L 33/00
H01L 21/20
US Classification:

372 45011, 257 14, 257 13, 438 46, 257E29168, 257E33008, 257E2109
Abstract:

A III-nitride optoelectronic device comprising a light emitting diode (LED) or laser diode with a peak emission wavelength longer than 500 nm. The III-nitride device has a dislocation density, originating from interfaces between an indium containing well layer and barrier layers, less than 9×10cm. The III-nitride device is grown with an interruption time, between growth of the well layer and barrier layers, of more than 1 minute.

Semipolar Nitride-Based Devices On Partially Or Fully Relaxed Alloys With Misfit Dislocations At The Heterointerface
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US Patent:

20110064103, Mar 17, 2011
Filed:

Aug 23, 2010
Appl. No.:

12/861532
Inventors:

Hiroaki Ohta - Goleta CA, US
Feng Wu - Goleta CA, US
Anurag Tyagi - Goleta CA, US
Arpan Chakraborty - Goleta CA, US
James S. Speck - Goleta CA, US
Steven P. DenBaars - Goleta CA, US
Shuji Nakamura - Santa Barbara CA, US
Erin C. Young - Santa Barbara CA, US
Assignee:

THE REGENTS OF THE UNIVERSITY OF CALIFORNIA - Oakland CA
International Classification:

H01S 5/343
H01L 33/04
C30B 23/02
C30B 25/02
B82Y 20/00
US Classification:

372 4501, 257 13, 117108, 117104, 257E33008, 977755, 977951
Abstract:

A dislocation-free high quality template with relaxed lattice constant, fabricated by spatially restricting misfit dislocation(s) around heterointerfaces. This can be used as a template layer for high In composition devices. Specifically, the present invention prepares high quality InGaN templates (In composition is around 5-10%), and can grow much higher In-composition InGaN quantum wells (QWs) (or multi quantum wells (MQWs)) on these templates than would otherwise be possible.

Crystal Growth Of M-Plane And Semipolar Planes Of (Al, In, Ga, B)N On Various Substrates
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US Patent:

20120068192, Mar 22, 2012
Filed:

Nov 30, 2011
Appl. No.:

13/308251
Inventors:

Kwang C. Kim - Seoul, KR
Mathew C. Schmidt - Santa Barbara CA, US
Feng Wu - Goleta CA, US
Asako Hirai - Santa Barbara CA, US
Melvin B. McLaurin - Goleta CA, US
Steven P. DenBaars - Goleta CA, US
Shuji Nakamura - Santa Barbara CA, US
James S. Speck - Goleta CA, US
Assignee:

The Regents of the University of California - Oakland CA
International Classification:

H01L 29/20
C30B 25/02
C30B 23/06
US Classification:

257 76, 117 84, 257E29089
Abstract:

A method of reducing threading dislocation densities in non-polar such as a-{11-20} plane and m-{1-100} plane or semi-polar such as {10-1n} plane III-Nitrides by employing lateral epitaxial overgrowth from sidewalls of etched template material through a patterned mask. The method includes depositing a patterned mask on a template material such as a non-polar or semi polar GaN template, etching the template material down to various depths through openings in the mask, and growing non-polar or semi-polar III-Nitride by coalescing laterally from the tops of the sidewalls before the vertically growing material from the trench bottoms reaches the tops of the sidewalls. The coalesced features grow through the openings of the mask, and grow laterally over the dielectric mask until a fully coalesced continuous film is achieved.

Anisotropic Strain Control In Semipolar Nitride Quantum Wells By Partially Or Fully Relaxed Aluminum Indium Gallium Nitride Layers With Misfit Dislocations
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US Patent:

20130259080, Oct 3, 2013
Filed:

May 29, 2013
Appl. No.:

13/904908
Inventors:

Feng Wu - Goleta CA, US
Anurag Tyagi - Goleta CA, US
Arpan Chakraborty - Goleta CA, US
James S. Speck - Goleta CA, US
Steven P. DenBaars - Goleta CA, US
Shuji Nakamura - Santa Barbara CA, US
Erin C. Young - Santa Barbara CA, US
International Classification:

H01L 33/12
H01S 5/34
H01S 5/32
US Classification:

372 4501, 257 13, 438 47
Abstract:

An epitaxial structure for a III-Nitride based optical device, comprising an active layer with anisotropic strain on an underlying layer, where a lattice constant and strain in the underlying layer are partially or fully relaxed in at least one direction due to a presence of misfit dislocations, so that the anisotropic strain in the active layer is modulated by the underlying layer.

Anisotropic Strain Control In Semipolar Nitride Quantum Wells By Partially Or Fully Relaxed Aluminum Indium Gallium Nitride Layers With Misfit Dislocations
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US Patent:

20140376584, Dec 25, 2014
Filed:

Sep 10, 2014
Appl. No.:

14/482760
Inventors:

- Oakland CA, US
Feng Wu - Goleta CA, US
Anurag Tyagi - San Jose CA, US
Arpan Chakraborty - Goleta CA, US
James S. Speck - Goleta CA, US
Steven P. DenBaars - Goleta CA, US
Shuji Nakamura - Santa Barbara CA, US
Erin C. Young - Santa Barbara CA, US
Assignee:

THE REGENTS OF THE UNIVERSITY OF CALIFORNIA - Oakland CA
International Classification:

H01S 5/343
H01S 5/34
US Classification:

372 45012, 438 47
Abstract:

An epitaxial structure for a III-Nitride based optical device, comprising an active layer with anisotropic strain on an underlying layer, where a lattice constant and strain in the underlying layer are partially or fully relaxed in at least one direction due to a presence of misfit dislocations, so that the anisotropic strain in the active layer is modulated by the underlying layer.