Fengyan Zhang

US Patent:

6541385, Apr 1, 2003

Filed:

May 14, 2001

Appl. No.:

09/855393

Inventors:

Hong Ying - San Jose CA
Fengyan Zhang - Vancouver WA
Jer-Shen Maa - Vancouver WA
Sheng Teng Hsu - Camas WA

Assignee:

Sharp Laboratories of America, Inc. - Camas WA

International Classification:

H01L 21302

US Classification:

438706, 438708, 438711, 438714, 438720, 438726

Abstract:

A method of forming an electrode in an integrated circuit includes preparing a silicon-base substrate, including forming semiconductor structures on the substrate to form an integrated substrate structure; depositing a layer of electrode material on a substrate structure; patterning the layer of electrode material to form electrode elements, wherein said patterning includes plasma etching the layer of electrode material in a plasma reactor in an etching gas atmosphere having a fluorine component therein; and cleaning the substrate structure and electrode elements in a distilled water bath.