Fong F Chang

US Patent:

6618265, Sep 9, 2003

Filed:

Oct 1, 2001

Appl. No.:

09/969202

Inventors:

Fong M. Chang - Los Gatos CA
Yu Chang - San Jose CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H05K 702

US Classification:

361760, 361775, 361823, 361828, 307 12, 307 29

Abstract:

All-or-none operation of a series of modular load elements is ensured by routing high and low voltage lines from a power source through opposite nodes positioned at either end of the series of load elements. This arrangement prevents activation of only a portion of the load elements where electrical connection between them is not successfully established.

US Patent:

6709715, Mar 23, 2004

Filed:

Jun 17, 1999

Appl. No.:

09/336368

Inventors:

Chi-I Lang - Sunnyvale CA
Shin-Puu Jeng - Hsinchu, TW
Yeming Jim Ma - Santa Clara CA
Fong Chang - Los Gatos CA
Peter Wai-Man Lee - San Jose CA
David W. Cheung - Foster City CA

Assignee:

Applied Materials Inc. - Santa Clara CA

International Classification:

H05H 146

US Classification:

427489, 427578, 427579, 427563, 438789, 438788

Abstract:

A method and apparatus for depositing a low dielectric constant film by plasma assisted copolymerization of p-xylylene and a comonomer having carbon-carbon double bonds at a constant RF power level from about 0W to about 100W or a pulsed RF power level from about 20W to about 160W. The copolymer film has a dielectric constant from about 2. 2 to about 2. 5. Preferred comonomers include tetravinyltetramethylcyclotetrasiloxane, tetraallyloxysilane, and trivinylmethylsilane. The copolymer films include at least 1% by weight of the comonomer.

US Patent:

20030003696, Jan 2, 2003

Filed:

Jun 29, 2001

Appl. No.:

09/896124

Inventors:

Avgerinos Gelatos - Redwood City CA, US
Joel Huston - San Jose CA, US
Lawrence Lei - Milipitas CA, US
Vicky Nguyen - San Jose CA, US
Yin Lin - Palo Alto CA, US
Fong Chang - Los Gatos CA, US

International Classification:

H01L021/36
H01L021/20
C30B001/00

US Classification:

438/485000, 438/507000, 438/935000

Abstract:

Generally, a substrate processing apparatus is provided. In one aspect of the invention, a substrate processing apparatus is provided. In one embodiment, the substrate processing apparatus includes one or more chamber bodies coupled to a gas distribution system. The chamber bodies define at least a first processing region and a second processing region within the chamber bodies. The gas distribution system includes a first, a second and a third gas supply circuit. The first gas supply circuit is teed between the first and second processing regions and is adapted to supply a first processing gas thereto. The second gas supply circuit is coupled to the first processing region and adapted to supply a second process gas thereto. The third gas supply circuit is coupled to the second processing region and is adapted to supply a third process gas thereto. Alternatively, the processing regions may be disposed in a single chamber body.

US Patent:

61761982, Jan 23, 2001

Filed:

Nov 2, 1998

Appl. No.:

9/184934

Inventors:

Fong M. Chang - Los Gatos CA
Robert B. Majewski - Scotts Valley CA
John Parks - Richmond CA
David Wanamaker - San Jose CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

C23C 1600

US Classification:

118723ME

Abstract:

The invention provides a deposition system and methods of depositing materials onto substrates. In one aspect, a modular processing chamber is provided which includes a chamber body defining a processing region. The chamber body includes a removable gas feedthrough, an electrical feedthrough, a gas distribution assembly mounted on a chamber lid and a microwave applicator for generating reactive gases remote from the processing region.

US Patent:

59398310, Aug 17, 1999

Filed:

Nov 13, 1996

Appl. No.:

8/746658

Inventors:

Gary Fong - Cupertino CA
Fong Chang - Los Gatos CA
Long Nguyen - Fremont CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

B08B 600

US Classification:

31511121

Abstract:

The present invention provides systems, methods and apparatus for high temperature (at least about 500-800. degree. C. ) processing of semiconductor wafers. The systems, methods and apparatus of the present invention allow multiple process steps to be performed in situ in the same chamber to reduce total processing time and to ensure high quality processing for high aspect ratio devices. Performing multiple process steps in the same chamber also increases the control of the process parameters and reduces device damage. In particular, the present invention can provide high temperature deposition, heating and efficient cleaning for forming dielectric films having thickness uniformity, good gap fill capability, high density, low moisture, and other desired characteristics.

US Patent:

60869526, Jul 11, 2000

Filed:

Jun 15, 1998

Appl. No.:

9/097365

Inventors:

Chi-I Lang - Sunnyvale CA
Yeming Jim Ma - Santa Clara CA
Fong Chang - Los Gatos CA
Peter Wai-Man Lee - San Jose CA
Shin-Puu Jeng - Hsinchu, TW
David Cheung - Foster City CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

C23C 1600

US Classification:

42725529

Abstract:

A method for forming thin polymer layers having low dielectric constants or semiconductor substrates. In one embodiment, the method includes the vaporization of stable di-p-xylylene, the pyrolytic conversion of such gaseous dimer material into reactive monomers, and blending of the resulting gaseous p-xylylene monomers with one or more comonomers having silicon-oxygen bonds and at least two pendent carbon--carbon double bonds. The copolymer films have low dielectric constants, improved thermal stability, and excellent adhesion to silicon oxide layers in comparison to parylene-N homopolymers.

US Patent:

58667954, Feb 2, 1999

Filed:

Mar 17, 1997

Appl. No.:

8/819593

Inventors:

Fong Chang - Los Gatos CA
Thanh Pham - San Jose CA
Jeff Plante - Pleasanton CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

G01L 2500

US Classification:

73 136

Abstract:

An apparatus for controlling the flow of a liquid precursor into a deposition chamber comprises a liquid injection system having a liquid injection outlet connected to a chamber inlet line upstream of the deposition chamber. The liquid injection system includes a liquid precursor supply, a purge gas supply, a carrier gas supply, a liquid flow meter, and a controller managing flows of the liquid precursor and carrier gas to the chamber. A purge line is connected between the purge gas supply and the liquid flow meter and is used to trap a known mass of liquid precursor. To calibrate the flow of the liquid precursor, the purge gas is used to push the trapped liquid precursor through the liquid flow meter at a steady rate. The elapsed time for evacuating the trapped liquid precursor from the purge line is measured. Calibration information is computed using the mass of the trapped liquid precursor and the measured elapsed time based on the direct liquid measurement approach.

US Patent:

59685883, Oct 19, 1999

Filed:

Mar 17, 1997

Appl. No.:

8/819674

Inventors:

Visweswaren Sivaramakrishnan - Santa Clara CA
Fong Chang - Los Gatos CA
Thanh Pham - San Jose CA
Jeff Plante - Pleasanton CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

C23C 1600

US Classification:

427 8

Abstract:

An apparatus for in-situ control of the flow of a liquid precursor into a deposition chamber comprises a liquid injection system having a liquid injection outlet connected to a chamber inlet line upstream of the deposition chamber. The liquid injection system includes a liquid precursor supply, a carrier gas supply, a vaporizer, and a controller managing flows of the liquid precursor and carrier gas to the chamber. A bypass line is connected to the chamber inlet line and includes a bypass valve, a sonic orifice, and a pressure gauge upstream of the sonic orifice. To calibrate the flow of the liquid precursor, a flow of carrier gas is directed into the bypass line at a carrier gas sonic flow rate. A first steady state pressure is measured with the pressure gauge. The liquid precursor is vaporized and directed to the flow of carrier gas into the bypass line.