Francisco R Navarro

US Patent:

53926960, Feb 28, 1995

Filed:

Feb 7, 1994

Appl. No.:

8/192454

Inventors:

Francisco Navarro - Maywood CA
Manuel Valdez - Huntington Park CA
Jose M. Buendia - La Habra CA

Assignee:

Machine Masters, Inc. - El Monte CA

International Classification:

A21B 142

US Classification:

99339

Abstract:

An apparatus and method for maintaining the lateral spacing of parallel rows of tortillas while transferring tortillas between two vertically spaced conveyors. The tortilla transfer guide is positioned adjacent to two generally horizontal, vertically spaced endless belt conveyors. The tortilla transfer guide has at least one scalloped section having a center of curvature aligned with the longitudinal axes respectively corresponding to an associated row of tortillas travelling towards the guide on the upper conveyor and an associated row travelling away from the guide on the lower conveyor. Each scalloped section is capable of moving a laterally misaligned tortilla towards its center of curvature, which is aligned with the proper longitudinal row axis on the lower conveyor.

US Patent:

20150064483, Mar 5, 2015

Filed:

Sep 3, 2014

Appl. No.:

14/476058

Inventors:

- Los Angeles CA, US
Francisco F. Navarro - Los Angeles CA, US

International Classification:

C23C 14/24
C22C 24/00
C22C 20/00
C22C 23/00
C22C 18/00
H01L 51/00
C22C 28/00
C22C 22/00
C22C 5/06
C22C 21/00
C22C 13/00
C22C 11/00
C23C 14/14
C22C 12/00

US Classification:

428457, 427252, 420415, 420525, 420402, 420513, 420576, 420577, 420555, 420434, 420501, 420528, 420557, 420563

Abstract:

A method of depositing a film of a metal having a volatilization temperature higher than 350 C., as well as, a composite material including the same are disclosed. The method can include providing the source material in a vacuum deposition processing chamber, and providing a substrate in the vacuum deposition processing chamber. The substrate can be spaced apart from, but in fluid communication with, the source material, and also maintained at a substrate temperature that is lower than the volatilization temperature. The method can also include reducing an internal pressure of the vacuum deposition processing chamber to a pressure between 0.1 and 14,000 pascals; volatilizing the source material into a volatilized metal by heating the source material to a first temperature that is higher than the volatilization temperature; and transporting the volatilized metal to the substrate using a heated carrier gas, whereby the volatilized metal deposits on the substrate and forms the metal film.