Frank J Evans

US Patent:

6678058, Jan 13, 2004

Filed:

Oct 24, 2001

Appl. No.:

10/039249

Inventors:

Leo B. Baldwin - Beaverton OR
Frank G. Evans - Dundee OR

Assignee:

Electro Scientific Industries, Inc. - Portland OR

International Classification:

G01B 1124

US Classification:

356609, 356620, 356401

Abstract:

A calibration system within an optical inspection apparatus comprising a sensor, lens, fiducials, and a CPU. The CPU is configured to receive information from the sensor relating to the fiducial coordinate system and the sensor coordinate system, and the fiducials are used to determine a physical relationship between the sensor coordinates and fiducial coordinates. The calibration system has a means for calibrating the inspection system and measuring critical dimensions of an object in an accurate manner on-the-fly without additional set-up or manual calibration of the system.

US Patent:

7425471, Sep 16, 2008

Filed:

Feb 4, 2005

Appl. No.:

11/051958

Inventors:

Kelly J. Bruland - Portland OR, US
Brian W. Baird - Oregon City OR, US
Ho Wai Lo - Portland OR, US
Stephen N. Swaringen - Rockwall TX, US
Frank G. Evans - Dundee OR, US

Assignee:

Electro Scientific Industries, Inc. - Portland OR

International Classification:

H01L 21/82

US Classification:

438130, 438 13, 21912168

Abstract:

Methods and systems selectively irradiate structures on or within a semiconductor substrate using a plurality of laser beams. The structures are arranged in a row extending in a generally lengthwise direction. The method generates a first laser beam that propagates along a first laser beam axis that intersects the semiconductor substrate and a second laser beam that propagates along a second laser beam axis that intersects the semiconductor substrate. The method directs the first and second laser beams onto distinct first and second structures in the row. The second spot is offset from the first spot by some amount in a direction perpendicular to the lengthwise direction of the row. The method moves the first and second laser beam axes relative to the semiconductor substrate along the row substantially in unison in a direction substantially parallel to the lengthwise direction of the row.

US Patent:

7923306, Apr 12, 2011

Filed:

Feb 4, 2005

Appl. No.:

11/052000

Inventors:

Kelly J. Bruland - Portland OR, US
Brian W. Baird - Oregon City OR, US
Ho Wai Lo - Portland OR, US
Stephen N. Swaringen - Rockwall TX, US
Frank G. Evans - Dundee OR, US

Assignee:

Electro Scientific Industries, Inc. - Portland OR

International Classification:

H01L 21/00
B23K 26/00

US Classification:

438132, 21912176

Abstract:

Methods and systems selectively irradiate structures on or within a semiconductor substrate using a plurality of pulsed laser beams. The structures are arranged in a row extending in a generally lengthwise direction. The method generates a first pulsed laser beam that propagates along a first laser beam axis that intersects the semiconductor substrate and a second pulsed laser beam that propagates along a second laser beam axis that intersects the semiconductor substrate. The method directs respective first and second pulses from the first and second pulsed laser beams onto distinct first and second structures in the row. The method moves the first and second laser beam axes relative to the semiconductor substrate substantially in unison in a direction substantially parallel to the lengthwise direction of the row.

US Patent:

7935941, May 3, 2011

Filed:

Feb 4, 2005

Appl. No.:

11/051263

Inventors:

Kelly J. Bruland - Portland OR, US
Brian W. Baird - Oregon City OR, US
Ho Wai Lo - Portland OR, US
Frank G. Evans - Dundee OR, US

Assignee:

Electro Scientific Industries, Inc. - Portland OR

International Classification:

B23K 26/08
B23K 26/38

US Classification:

2504922, 25049222, 21912168, 21912169

Abstract:

Methods and systems selectively irradiate structures on or within a semiconductor substrate using a plurality of laser beams. The structures are arranged in a row extending in a generally lengthwise direction. The method generates a first laser beam that propagates along a first laser beam axis that intersects the semiconductor substrate and a second laser beam that propagates along a second laser beam axis that intersects the semiconductor substrate. The method directs the first and second laser beams onto non-adjacent first and second structures in the row. The method moves the first and second laser beam axes relative to the semiconductor substrate along the row substantially in unison in a direction substantially parallel to the lengthwise direction of the row.

US Patent:

8148211, Apr 3, 2012

Filed:

Feb 4, 2005

Appl. No.:

11/051500

Inventors:

Kelly J. Bruland - Portland OR, US
Brian W. Baird - Oregon City OR, US
Ho Wai Lo - Portland OR, US
Stephen N. Swaringen - Rockwall TX, US
Frank G. Evans - Dundee OR, US

Assignee:

Electro Scientific Industries, Inc. - Portland OR

International Classification:

H01L 21/77
B23K 26/02
B23K 26/06
B23K 26/08
B23K 26/40

US Classification:

438131, 438132, 219 68, 219162

Abstract:

Methods and systems selectively irradiate structures on or within a semiconductor substrate using a plurality of laser beams. The structures are arranged in a row extending in a generally lengthwise direction. The method generates a first laser beam that propagates along a first laser beam axis that intersects the semiconductor substrate and a second laser beam that propagates along a second laser beam axis that intersects the semiconductor substrate. The method simultaneously directs the first and second laser beams onto distinct first and second structures in the row. The method moves the first and second laser beam axes relative to the semiconductor substrate substantially in unison in a direction substantially parallel to the lengthwise direction of the row, so as to selectively irradiate structures in the row with one or more of the first and second laser beams simultaneously.

US Patent:

20040141175, Jul 22, 2004

Filed:

Feb 27, 2004

Appl. No.:

10/616548

Inventors:

Leo Baldwin - Portland OR, US
Frank Evans - Dundee OR, US

International Classification:

G01N021/88

US Classification:

356/237200

Abstract:

The present invention provides a light source which improves the lighting for objects which include a nontrivial bi-directional reflectance distribution function and a nominal illumination angle. A two dimensional light source is positioned at an angle which is complementary to the nominal illumination angle such that the object is illuminated at its nominal illumination angle.

US Patent:

20090011614, Jan 8, 2009

Filed:

Sep 15, 2008

Appl. No.:

12/210955

Inventors:

Kelly J. Bruland - Portland OR, US
Brian W. Baird - Oregon City OR, US
Ho Wai Lo - Portland OR, US
Stephen N. Swaringen - Rockwall TX, US
Frank G. Evans - Dundee OR, US

Assignee:

Electro Scientific Industries, Inc. - Portland OR

International Classification:

H01L 21/268
B23K 26/08

US Classification:

438795, 2191218, 257E21347

Abstract:

Methods and systems selectively irradiate structures on or within a semiconductor wafer using multiple laser beams. The structures may be laser-severable conductive links, and the purpose of the irradiation may be to sever selected links. The structures are arranged in rows and may be processed in either an on-axis mode or a cross-axis mode. In the on-axis mode, the beam spots fall on structures in the same row as they move along the row. In the cross-axis mode, the beam spots fall on structures in different rows as they move along the rows.

US Patent:

20110186555, Aug 4, 2011

Filed:

Apr 12, 2011

Appl. No.:

13/085291

Inventors:

Kelly J. Bruland - Portland OR, US
Brian W. Baird - Oregon City OR, US
Ho Wai Lo - Portland OR, US
Stephen N. Swaringen - Rockwall TX, US
Frank G. Evans - Dundee OR, US

International Classification:

B23K 26/06

US Classification:

21912175, 21912176

Abstract:

Methods and systems selectively irradiate structures on or within a semiconductor substrate using a plurality of pulsed laser beams. The structures are arranged in a row extending in a generally lengthwise direction. The method generates a first pulsed laser beam that propagates along a first laser beam axis that intersects the semiconductor substrate and a second pulsed laser beam that propagates along a second laser beam axis that intersects the semiconductor substrate. The method directs respective first and second pulses from the first and second pulsed laser beams onto distinct first and second structures in the row. The method moves the first and second laser beam axes relative to the semiconductor substrate substantially in unison in a direction substantially parallel to the lengthwise direction of the row.