Fred V Richard

US Patent:

6421104, Jul 16, 2002

Filed:

Oct 22, 1999

Appl. No.:

09/426169

Inventors:

Fred Vincent Richard - Scottsdale AZ

Assignee:

Motorola, Inc. - Schaumburg IL

International Classification:

G02F 11335

US Classification:

349 63, 399187, 362 31

Abstract:

A front illumination device for illuminating a reflective liquid crystal display cell ( ) having a light source ( ), a light guide ( ), and a light coupling element ( ). The light guide ( ) has a thin plate element configured to receive light along an edge surface ( ) thereof at an angle such that a majority of the light is totally internally reflected from the front surface ( ) of the light guide ( ). The light coupling element ( ) has a thin plate element having a front surface ( ) that is in contact with the back surface ( ) of planar light guide ( ). The front surface ( ) of the light coupling element ( ) has a plurality of cavities ( ) disposed therein. Light impinging the interfaces ( ) between cavities ( ) and the back surface ( ) is totally internally reflected within light guide Light impinging the interfaces ( ) between the cavities is transmitted into light coupling element ( ) and is allowed to impinge a pixel ( A- K) of liquid crystal display cell ( ) which selectively rotates the polarization according to the selected state of the pixel and reflects the light back through the front surface ( ) of light guide ( ) for viewing by the user. A method of manufacturing the light coupling element ( ) includes depositing a mask on the 100 surface of a silicon substrate ( ), preferentially etching the substrate ( ) and applying metallization to the etched substrate ( ) to form a mold master having an extremely fine intercavity pitch.

US Patent:

6657683, Dec 2, 2003

Filed:

May 9, 2002

Appl. No.:

10/142037

Inventors:

Fred Vincent Richard - Scottsdale AZ

Assignee:

Motorola, Inc. - Schaumburg IL

International Classification:

G02F 11335

US Classification:

349 63, 362 31, 385901

Abstract:

A front illumination device for illuminating a reflective liquid crystal display cell ( ) having a light source ( ), a light guide ( ), and a light coupling element ( ). The light guide ( ) has a thin plate element configured to receive light along an edge surface ( ) thereof at an angle such that a majority of the light is totally internally reflected from the front surface ( ) of the light guide ( ). The light coupling element ( ) has a thin plate element having a front surface ( ) that is in contact with the back surface ( ) of planar light guide ( ). The front surface ( ) of the light coupling element ( ) has a plurality of cavities ( ) disposed therein. Light impinging the interfaces ( ) between cavities ( ) and the back surface ( ) is totally internally reflected within light guide ( ). Light impinging the interfaces ( ) between the cavities is transmitted into light coupling element ( ) and is allowed to impinge a pixel (48A-48K) of liquid crystal display cell ( ) which selectively rotates the polarization according to the selected state of the pixel and reflects the light back through the front surface ( ) of light guide ( ) for viewing by the user. A method of manufacturing the light coupling element ( ) includes depositing a mask on the 100 surface of a silicon substrate ( ), preferentially etching the substrate ( ) and applying metallization to the etched substrate ( ) to form a mold master having an extremely fine intercavity pitch.

US Patent:

6798441, Sep 28, 2004

Filed:

May 25, 2001

Appl. No.:

09/865840

Inventors:

Davis H. Hartman - Scottsdale AZ
Fred Vincent Richard - Scottsdale AZ
Diana Chen - Gilbert AZ
Karen E. Jachimowicz - Laveen AZ
Barbara McNeill Foley - Phoenix AZ
William Peterson - Chandler AZ
Earnest J. Johnson - Mesa AZ

Assignee:

Motorola, Inc. - Schaumburg IL

International Classification:

H04N 714

US Classification:

348 1408, 348 1409, 348 1416

Abstract:

A teleconference system including a plurality of personal presence cells positioned at a local communication site and at a remote communication site. The plurality of personal presence cells are characterized as either sensor cells or display cells. The sensor cells include at least one video camera positioned to sense and transmit an image of the local participant, and an image screen positioned to reflect an image of the local participant toward the at least one video camera and for viewing of an image through the screen. The display cells each include at least one projection display positioned to display a multi-dimensional image of a remote participant on a display screen. A transmission link interfaces the plurality of personal presence cells positioned at the local communication site and the plurality of presence cells positioned at the remote communication site.

US Patent:

6963061, Nov 8, 2005

Filed:

Aug 15, 2002

Appl. No.:

10/222187

Inventors:

Fred Vincent Richard - Scottsdale AZ, US
Paige Holm - Phoenix AZ, US

Assignee:

Motorola, Inc. - Schaumburg IL

International Classification:

G01J001/04
G01J001/42
G01J005/08

US Classification:

25022714, 257 82, 257 98, 257432, 385 14, 385 15

Abstract:

The transceivers of the present invention use orthogonal coupling, i. e. , perpendicular to the substrate, for a single fiber implementation of a transceiver incorporating both a VCSEL and a detector. The methods of the present invention include aligning and bonding a substrate wafer to a coupling wafer, prior to dicing the resultant compound wafer.

US Patent:

6965128, Nov 15, 2005

Filed:

Feb 3, 2003

Appl. No.:

10/356549

Inventors:

Paige M. Holm - Phoenix AZ, US
Barbara Foley Barenburg - Gilbert AZ, US
Joyce K. Yamamoto - Chandler AZ, US
Fred V. Richard - Scottsdale AZ, US

Assignee:

Freescale Semiconductor, Inc. - Austin TX

International Classification:

H01L033/00

US Classification:

257103, 257184, 257189, 385 4, 385 11, 385 15

Abstract:

High quality epitaxial layers of monocrystalline materials () can be grown overlying monocrystalline substrates () such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer () comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer () of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy and epitaxial growth of single crystal silicon onto single crystal oxide materials. A microresonator device is formed overlying the monocrystalline substrate. Portions or an entirety of the microresonator device can also overly the accommodating buffer layer, or the monocrystalline material layer.

US Patent:

20030021014, Jan 30, 2003

Filed:

Jul 25, 2001

Appl. No.:

09/911420

Inventors:

Barbara Barenburg - Gilbert AZ, US
Fred Richard - Scottsdale AZ, US

Assignee:

MOTOROLA, INC. - Schaumgurg IL

International Classification:

H01S003/00

US Classification:

359/344000

Abstract:

High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. The compliant substrate includes an optical laser array configured as a linear optical amplifier.

US Patent:

20030026311, Feb 6, 2003

Filed:

Aug 6, 2001

Appl. No.:

09/921896

Inventors:

Barbara Barenburg - Gilbert AZ, US
Fred Richard - Scottsdale AZ, US
Joyce Yamamoto - Chandler AZ, US

Assignee:

MOTOROLA, INC. - Schaumburg IL

International Classification:

H01S005/00

US Classification:

372/050000

Abstract:

High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials. From the foregoing, a multiplexing apparatus of optical lasers can be formed in accordance with the present invention.

US Patent:

20030030062, Feb 13, 2003

Filed:

Aug 9, 2001

Appl. No.:

09/924481

Inventors:

Paige Holm - Phoenix AZ, US
Barbara Barenburg - Gilbert AZ, US
Fred Richard - Scottsdale AZ, US
Joyce Yamamoto - Chandler AZ, US

Assignee:

MOTOROLA, INC. - Schaumburg IL

International Classification:

H01L027/15

US Classification:

257/080000, 257/079000, 257/084000

Abstract:

High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials. The foregoing is utilized for fabricating a laser cavity of a laser.