Gary D Alley

US Patent:

6887339, May 3, 2005

Filed:

Sep 20, 2001

Appl. No.:

09/960227

Inventors:

Daniel Goodman - Lexington MA, US
Andrzej Bortkiewicz - Hamilton MA, US
Gary D. Alley - Londonderry NH, US
Stephen F. Horne - Chelmsford MA, US
William M. Holber - Winchester MA, US

Assignee:

Applied Science and Technology, Inc. - Wilmington MA

International Classification:

H05H001/00
C23C016/00

US Classification:

15634528, 15634548, 15634547, 15634541, 118723 E, 118723 I, 118723 MW

Abstract:

The invention features an RF plasma generator. The RF plasma generator includes a variable frequency RF generator, comprising an H-bridge and an RF output. The RF generator generates electromagnetic radiation having a power. The RF plasma generator further includes a matching network that includes at least one variable impedance component. The matching network also includes a first port that is electromagnetically coupled to the output of the RF generator and a second port. The RF plasma generator also includes a load that is electromagnetically coupled to the second port of the matching network, and a plasma chamber for containing a plasma having a power. The plasma chamber is electromagnetically coupled to the load and receives electromagnetic radiation having a power from the load. Adjusting at least one of the frequency of the RF generator and the variable impedance component in the matching network changes the power in the plasma.

US Patent:

50325388, Jul 16, 1991

Filed:

Jul 7, 1987

Appl. No.:

7/073912

Inventors:

Carl O. Bozler - Sudbury MA
Gary D. Alley - Londonderry NH
William T. Lindley - Lexington MA
R. Allen Murphy - Hudson MA

Assignee:

Massachusetts Institute of Technology - Cambridge MA

International Classification:

H01L 2120
H01L 2174
H01L 2195

US Classification:

437 83

Abstract:

A permeable base transistor (30) including a metal base layer (34) embedded in a semiconductor crystal (32) to separate collector (38) and emitter (40) regions and form a Schottky barrier with each is disclosed. The metal base layer has at least one opening (37) through which the crystal semiconductor (32) joins the collector (38) and emitter (40) regions. Ohmic contacts (42,44) are made to the emitter (38) and collector (40) regions. The width of all openings (37) in the base layer (34) is of the order of the zero bias depletion width corresponding to the carrier concentration in the opening. The thickness of the metal layer (34) is in the order of 10% of this zero bias depletion width. As a result, a potential barrier in each opening limits current flow over the lower portion of the bias range. With increasing forward base bias the potential in the openings, which is lower than along the metal of the base layer (34), is lowered sufficiently to permit substantial increase in the barrier limited current flow from the collector (38) to emitter (40).

US Patent:

52987876, Mar 29, 1994

Filed:

Apr 1, 1991

Appl. No.:

7/678670

Inventors:

Carl O. Bozler - Sudbury MA
Gary D. Alley - Londonderry NH
William T. Lindley - Lexington NH
R. Allen Murphy - Hudson MA

Assignee:

Massachusetts Institute of Technology - Cambridge MA

International Classification:

H01L 27082
H01L 2900
H01L 27102
H01L 2930

US Classification:

257592

Abstract:

A permeable base transistor (30) including a metal base layer (34) embedded in a semiconductor crystal (32) to separate collector (38) and emitter (40) regions and form a Schottky barrier with each is diclosed. The metal base layer has at least one opening (37) through which the crystal semiconductor (32) joins the collector (38) and emitter (40) regions. Ohmic contacts (42,44) are made to the emitter (38) and collector (40) regions. The width of all openings (37) in the base layer (34) is of the order of the zero bias depletion width corresponding to the carrier concentration in the opening. The thickness of the metal layer (34) is in the order of 10% of this zero bias depletion width. As a result, a potential barrier in each opening limits current flow over the lower portion of the bias range. With increasing forward base bias the potential in the openings, which is lower than along the metal of the base layer (34), is lowered sufficiently to permit substantial increase in the barrier limited current flow from the collector (38) to emitter (40).

US Patent:

45532656, Nov 12, 1985

Filed:

Dec 8, 1983

Appl. No.:

6/559609

Inventors:

Brian J. Clifton - Sudbury MA
Gary D. Alley - Londonderry NH

International Classification:

H04B 126

US Classification:

455325

Abstract:

A monolithic mixer which is impedance matched to a fundamental waveguide, utilizes a slot coupler and a coplanar transmission line to apply an RF and local oscillator signal to a Schotty-barrier diode. The dielectric substrate is utilized to create a dielectric surface wave resonance which is utilized by centering a slot coupler with respect thereto, to provide a reactive image termination at the upper sideband and thereby enhance single and double sideband mixer operation. The IF signal which is available at the output of the Schottky-barrier diode is filtered by means of an RF bypass capacitor that is located on the dielectric substrate surface.

US Patent:

43786294, Apr 5, 1983

Filed:

Aug 10, 1979

Appl. No.:

6/065514

Inventors:

Carl O. Bozler - Sudbury MA
Gary D. Alley - Londonderry NH
William T. Lindley - Lexington MA
R. Allen Murphy - Hudson MA

Assignee:

Massachusetts Institute of Technology - Cambridge MA

International Classification:

H01L 2120
H01L 2174
H01L 2195

US Classification:

29580

Abstract:

A layer of material such as the metal base of a transistor is embedded in single crystal. A layer of the material with small, uniformly dimensioned and uniformly spaced openings is formed on a single crystal substrate, and the single crystal is grown from the exposed portions of the substrate over the layer of material. For best results, the layer of material to be embedded is deposited relative to the crystal orientation to provide a much greater rate of crystal growth laterally across the layer than away from the crystal substrate. The method is particularly useful in fabricating a permeable base transistor having slits formed in the metal base layer. An integrated circuit can be fabricated by forming a pattern of conductive material on a single crystal, that pattern having continuous regions which inhibit further crystal growth and narrow regions or regions having openings therein which permit lateral crystal growth across those regions. In that way, the conductive pattern is selectively embedded with the continuous regions left exposed after crystal growth. Connections can be made between the exposed regions and a pattern on the new crystal layer.

US Patent:

59306785, Jul 27, 1999

Filed:

May 13, 1996

Appl. No.:

8/645302

Inventors:

Gary Dale Alley - Londonderry NH
Yen-Long Kuo - Andover MA

Assignee:

Lucent Technologies Inc - Murray Hill NJ

International Classification:

H04H 102
H04N 710
H04J 1500

US Classification:

455 61

Abstract:

A method and apparatus for providing spectral control of intermodulation products in communications systems to reduce the distorting and interfering effects of system nonlinearities. The method provides a technique which controls the phases of video carriers in order to minimize second and third order intermodulation distortion products both in-band and out-of-band.

US Patent:

44110227, Oct 18, 1983

Filed:

Jan 27, 1982

Appl. No.:

6/343034

Inventors:

Brian J. Clifton - Sudbury MA
Gary D. Alley - Londonderry NH
Ralph A. Murphy - Hudson MA

Assignee:

The United States of America as represented by the Secretary of the Air
Force - Washington DC

International Classification:

H04B 126

US Classification:

455327

Abstract:

An integrated circuit mixer which is impedance matched to a fundamental waveguide, utilizes a slot coupler and a coplanar transmission line to apply an RF and local oscillator signal to a Schottky-barrier diode. The IF signal which is available at the output of the Schottky-barrier diode is filtered by means of an RF bypass capacitor that is located on the dielectric substrate surface. At 110 GHz, a mixer module when mounted in the end of a waveguide horn, has an uncooled double-sideband (DSB) mixer noise temperature of 339. degree. K. and conversion loss of 3. 8 dB.