Gary P O'Brien

US Patent:

6913941, Jul 5, 2005

Filed:

Sep 9, 2002

Appl. No.:

10/238062

Inventors:

Gary J. O'Brien - Gilbert AZ, US
David J. Monk - Mesa AZ, US

Assignee:

Freescale Semiconductor, Inc. - Schaumburg IL

International Classification:

H01L021/00

US Classification:

438 48, 438 50, 438 52

Abstract:

A method for creating a MEMS structure is provided. In accordance with the method, a substrate () is provided having a sacrificial layer () disposed thereon and having a layer of silicon () disposed over the sacrificial layer. A first trench () is created which extends through the silica layer and the sacrificial layer and which separates the sacrificial layer into a first region () enclosed by the first trench and a second region () exterior to the first trench. A first material () is deposited into the first trench such that the first material fills the first trench to a depth at least equal to the thickness of the sacrificial layer. A second trench () is created exterior to the first trench which extends through at least the silicon layer and exposes at least a portion of the second region of the sacrificial layer. The second region of the sacrificial layer is contacted, by way of the second trench, with a chemical etching solution adapted to etch the sacrificial layer, said etching solution being selective to the first material.

US Patent:

7005193, Feb 28, 2006

Filed:

Apr 29, 2003

Appl. No.:

10/426148

Inventors:

Andrew C. McNeil - Scottsdale AZ, US
Gary Li - Gilbert AZ, US
Gary J. O'Brien - Gilbert AZ, US

Assignee:

Motorola, Inc. - Schaumburg IL

International Classification:

B32B 15/00
G01P 15/02
C23F 1/00

US Classification:

428450, 428446, 7351401, 7351436, 7351438, 216 2, 216 99

Abstract:

A proof mass () for a MEMS device is provided herein. The proof mass comprises a base () comprising a semiconductor material, and at least one appendage () adjoined to said base by way of a stem (). The appendage () comprises a metal () or other such material that may be disposed on a semiconductor material (). The metal increases the total mass of the proof mass () as compared to a proof mass of similar dimensions made solely from semiconductor materials, without increasing the size of the proof mass. At the same time, the attachment of the appendage () by way of a stem () prevents stresses arising from CTE differentials in the appendage from being transmitted to the base, where they could contribute to temperature errors.

US Patent:

6307298, Oct 23, 2001

Filed:

Mar 20, 2000

Appl. No.:

9/531697

Inventors:

Gary J. O'Brien - Gilbert AZ

Assignee:

Motorola, Inc. - Schaumburg IL

International Classification:

H02N 100

US Classification:

310309

Abstract:

An actuator includes a support layer (110), a stationary structure (130) located over the support layer and including two portions (131, 132, 731, 732, 831, 832) adjacent to each other and separated from each other by a gap (133), and a movable structure (140, 240, 340, 440, 540, 650, 740, 840) coupled to and located over the support layer, located adjacent to the stationary structure, and movable relative to the stationary structure and the support layer. A portion (143, 243, 343, 443, 543, 643, 743, 843) of the movable structure is located in the gap between the two portions of the stationary structure, and the portion of the movable structure comprises a body (144) and an asymmetric structure (145, 245, 345, 445, 545, 645, 745, 845) extending from the body.

US Patent:

59005300, May 4, 1999

Filed:

Nov 24, 1997

Appl. No.:

8/979331

Inventors:

Gary J. O'Brien - Phoenix AZ
Andrew C. McNeil - Scottsdale AZ
Mark D. Summers - Phoenix AZ

Assignee:

Motorola, Inc. - Schaumburg IL

International Classification:

G01L 2700

US Classification:

73 157

Abstract:

Pressure sensors that are fabricated to sense low pressures are tested and calibrated by providing a controlled gas flow or leak to create a pressure during testing. Rather than placing the pressure sensor in a sealed environment, a controlled leak of a gas is used to induce a stable and controllable pressure region over the pressure sensor during testing. The stable low pressure region is monitored via a sensing tube.

US Patent:

59518936, Sep 14, 1999

Filed:

Jun 10, 1997

Appl. No.:

8/872803

Inventors:

Gordon Bitko - Phoenix AZ
Gary O'Brien - Phoenix AZ

Assignee:

Motorola, Inc. - Schaumburg IL

International Classification:

H05B 302
B23K 1116
H05K 118

US Classification:

219209

Abstract:

Heater circuits (13) are placed in close proximity or integrated with connection points (12) of an integrated circuit. A connection point is an area where a wire bond or conductive bump is coupled for providing electrical interconnection external to an integrated circuit. Heater circuits (13) are polysilicon strips that form resistive heat elements. A DC voltage or a pulsed voltage is applied to the heater circuits (13) to generate a local heat at the connection points that can reach temperatures exceed 1000 degrees centigrade. The heat is localized to an area near the connection point to prevent damage to temperature sensitive material. The heater circuits (13) raise the temperature of the connection points (12) to increase bond strength of a wire bond or to reflow a conductive bump to adhere to a connection point of another substrate.