Gary R Taylor

Address:

3523 Macpherson Pl, Cincinnati, OH 45245

VIN:

JHLRE485X7C014872

Make:

HONDA

Model:

CR-V

Year:

2007

US Patent:

54879671, Jan 30, 1996

Filed:

Feb 17, 1995

Appl. No.:

8/390733

Inventors:

Richard S. Hutton - Summit NJ
Gary N. Taylor - Bridgewater NJ
David R. Wheeler - Albuquerque NM

Assignee:

AT&T Corp. - Murray Hill NJ

International Classification:

G03F 738

US Classification:

430322

Abstract:

A surface-imaging technique for lithographic processes is disclosed. The lithographic processes are used to manufacture integrated circuit devices. An image is produced on a resist that is applied onto a substrate. The image is produced by exposing selected regions of the resist material to radiation. The selected exposed regions correspond to the image. The resist is then exposed to a silylating reagent that selectively reacts with either the exposed or the unexposed region of the resist. The silylating reagent is combined with a cross-linking reagent. The silylated resist is then subjected to reactive ion etching, which forms an in situ silicon oxide etch mask over the silylated regions of the resist. The mask so formed provides etching selectivity which provides precise image transfer from the resist into the substrate.

US Patent:

57364249, Apr 7, 1998

Filed:

Aug 1, 1996

Appl. No.:

8/695181

Inventors:

Judith Ann Prybyla - Edison NJ
Gary Newton Taylor - Bridgewater NJ

Assignee:

Lucent Technologies Inc. - Murray Hill NJ

International Classification:

H01L 21311

US Classification:

437228

Abstract:

Planarization of geometrically difficult semiconductor device surfaces is accomplished utilizing a coating technique in which on an object with a flat surface is used to planarize the coating material. In particular, device processing is accomplished by including a step that produces a planar surface by coating a nonplanar surface with a material that has a viscosity of less than 1000 cp. An object with a flat surface is placed into contact with the material in such a manner that the material is planarized to a desired degree. The material is cured while in contact with the object's flat surface. The object is then separated from the material. The planarity of the planarizing material is then transferred into the underlying layer using conventional techniques.

US Patent:

42321107, Nov 4, 1980

Filed:

Mar 12, 1979

Appl. No.:

6/019711

Inventors:

Gary N. Taylor - Fanwood NJ

Assignee:

Bell Telephone Laboratories, Incorporated - Murray Hill NJ

International Classification:

H05K 300
G03C 500

US Classification:

430313

Abstract:

A process of dry etching to form negative resist patterns is described. A host polymer is mixed with one or more monomers capable of being locked into place by electromagnetic radiation and is deposited as a film on a substrate. The film is then selectively irradiated, and then fixed by heating, or vacuum, or both, and etched by means of an oxygen plasma. The rate of removal is higher in the unirradiated region than in the irradiated region, yielding a negative resist pattern. A sensitizer may be added to allow use of various radiation wavelengths. The desirable properties of monomer and host polymer materials are discussed, and specific compositions given of aromatic monomers, silicon containing monomers, and chlorinated polymers.

US Patent:

40618293, Dec 6, 1977

Filed:

Apr 26, 1976

Appl. No.:

5/680156

Inventors:

Gary Newton Taylor - Fanwood NJ

Assignee:

Bell Telephone Laboratories, Incorporated - Murray Hill NJ

International Classification:

B05D 306

US Classification:

428451

Abstract:

A class of chlorinated or brominated polymeric negative resists for high resolution X-ray or electron lithographic processes is described. Chlorine and bromine atoms have a generally high mass absorption coefficient for X-rays and can be incorporated into the polymer in high weight percents. The chlorinated resists are especially sensitive to the 4. 37 Angstrom characteristic X-rays from a Pd target.

US Patent:

44002351, Aug 23, 1983

Filed:

Mar 25, 1982

Appl. No.:

6/362045

Inventors:

Gerald A. Coquin - New Providence NJ
Joseph M. Moran - Berkeley Heights NJ
Gary N. Taylor - Bridgewater NJ

Assignee:

Bell Telephone Laboratories, Incorporated - Murray Hill NJ

International Classification:

H01L 21306
B44C 122
C03C 1500
C03C 2506

US Classification:

156643

Abstract:

In a plasma-assisted dry etching process designed to pattern VLSI devices, a relatively high and uniform etch rate exhibiting low contamination is achieved over the entire surface extent of each wafer to be etched. This is accomplished by mounting the wafers in a unique fashion on one of two spaced-apart electrodes in the reaction chamber of a dry etching system. In particular, the front surface of each wafer is maintained in substantially the same plane as that of surrounding dielectric material. Additionally, the thickness of the surrounding dielectric material is designed to be considerably greater than the thickness of any dielectric material in contact with the back surface of each wafer. In that way, the entire front surface extent of each wafer is influenced by a relatively uniform electric field. Moreover, the available field in the chamber is in effect focussed onto the wafer surfaces, thereby achieving a relatively high etch rate characterized by low contamination.

US Patent:

57503125, May 12, 1998

Filed:

May 2, 1994

Appl. No.:

8/236706

Inventors:

Edwin Arthur Chandross - Berkeley Heights NJ
Omkaram Nalamasu - Basking Ridge NJ
Elsa Reichmanis - Westfield NJ
Gary Newton Taylor - Bridgewater NJ
Larry Flack Thompson - Millington NJ

Assignee:

Lucent Technologies Inc. - Murray Hill NJ

International Classification:

G03C 500
G03F 700

US Classification:

4302731

Abstract:

It has been found that surface reactions with basic materials such as amines found in the processing environment during lithographic processing contribute to a loss of linewidth control for resists such as chemically amplified resists. This loss in linewidth results from the reaction of the acid generated by exposing radiation with, for example, the amine resulting in a lack of chemical reaction where such reaction is desired. The problem is solved in one embodiment by employing an acid containing barrier layer on the resist.

US Patent:

52158675, Jun 1, 1993

Filed:

May 15, 1987

Appl. No.:

7/054147

Inventors:

Larry E. Stillwagon - Summit NJ
Gary N. Taylor - Bridgewater NJ
Thirumalai N. C. Venkatesan - Bridgewater NJ
Thomas M. Wolf - Succasunna NJ

Assignee:

AT&T Bell Laboratories - Murray Hill NJ

International Classification:

G03F 736
G03F 7008

US Classification:

430323

Abstract:

A resist is formed by sorption of an inorganic-containing gas into an organic material. The development of the resist occurs by exposure to a plasma (e. g. , oxygen reactive ion etching) that forms a protective compound (e. g. , a metal oxide) selectively in the resist. The selected regions can be defined by patterning radiation of various types, including visible, ultraviolet, electron beam, and ion beam. In an alternate embodiment, the selected regions are defined by an overlying resist, with the gas sorption protecting the underlying layer in a bilevel resist. The protective compound can protect the organic resist layer during etching of an underlying inorganic layer, such as metal, silicide, oxide, nitride, etc.

US Patent:

42256640, Sep 30, 1980

Filed:

Feb 22, 1979

Appl. No.:

6/014243

Inventors:

Joseph M. Moran - Berkeley Heights NJ
Gary N. Taylor - Fanwood NJ

Assignee:

Bell Telephone Laboratories, Incorporated - Murray Hill NJ

International Classification:

G03C 171
B05D 306

US Classification:

430306

Abstract:

A mixture of poly(2,3-dichloro-1-propyl acrylate) and poly(glycidyl methacrylate-co-ethyl acrylate), with the latter forming between 1 percent and 20 percent by weight, of the total polymer mixture, has been found to form an x-ray resist having adhesive and resolving properties superior to those of poly(2,3-dichloro-1-propyl acrylate) which is a good x-ray resist material. Superior properties of the mixture are attributed to the fact that the two polymers form a compatible polymer mixture which is a relatively rare and unpredictable event in polymer chemistry.