George D Templeton

US Patent:

7817389, Oct 19, 2010

Filed:

Feb 18, 2009

Appl. No.:

12/379294

Inventors:

Alfredo Ochoa - Cave Creek AZ, US
George Templeton - Tempe AZ, US
James Washburn - Scottsdale AZ, US

International Classification:

H02H 3/20
H02H 9/04

US Classification:

361 56, 361111, 361 911

Abstract:

A semiconductor device for coupling a transient voltage at an input node to a reference node, the device having a bipolar transistor adapted to couple its collector to an input node and its emitter to the reference node and a driver device adapted to be coupled between the input node and the base terminal of the transistor such that the driver device is responsive to a transient voltage at the input node to turn on the transistor, thereby shunting the transient voltage to the reference node. Preferably, the input node is coupled to a high speed data transmission line that operates below 5 v and the reference node is coupled to ground and the transistor is an NPN transistor. The driver may preferably be a gate-drain connected MOS transistor with its gate-drain terminal coupled to the collector terminal of the transistor and its source terminal coupled to the base terminal of the transistor. Alternatively, the driver may be a light emitting diode (LED) or any other diode with a different material (band-gap) and die size than the LED, connected to the bipolar transistor to create a low voltage clamping device.

US Patent:

7968907, Jun 28, 2011

Filed:

Dec 9, 2008

Appl. No.:

12/314375

Inventors:

George Templeton - Tempe AZ, US
James Washburn - Scottsdale AZ, US

Assignee:

Pan Jit Americas, Inc. - Tempe AZ

International Classification:

H01L 21/70

US Classification:

257173, 257112, 257119, 257130, 257157, 257E21515, 257E23187

Abstract:

An over-voltage protection thyristor has reduced junction capacitance making it suitable for use in high bandwidth applications. The reduced capacitance is achieved through the introduction of a deep base region. The deep base region has a graded doping concentration which reduces with depth into the substrate. The thyristor is useful for protecting sensitive electrical equipment from transient surges.

US Patent:

20020125507, Sep 12, 2002

Filed:

Mar 5, 2002

Appl. No.:

10/090535

Inventors:

James Washburn - Scottsdale AZ, US
George Templeton - Tempe AZ, US

International Classification:

H01L029/76

US Classification:

257/213000

Abstract:

Interruptible high-voltage current limiter in a monolithic configuration: The structure comprises serially-connected complementary depletion-mode FET's where at least the gate of one of the FET's shares a common semiconductor region with the drain of the other FET. In a preferred embodiment, the FET's comprise a vertical n-channel depletion mode FET and a lateral depletion mode P-type FET. A Zener diode may be used to help control the cutoff voltage of the limiter.

US Patent:

20060082938, Apr 20, 2006

Filed:

Mar 9, 2005

Appl. No.:

11/075416

Inventors:

Alfredo Ochoa - Cave Creek AZ, US
George Templeton - Tempe AZ, US
James Washburn - Scottsdale AZ, US

International Classification:

H02H 9/00

US Classification:

361056000

Abstract:

A semiconductor device for coupling a transient voltage at an input node to a reference node, the device having a bipolar transistor adapted to couple its collector to an input node and its emitter to the reference node and a driver device adapted to be coupled between the input node and the base terminal of the transistor such that the driver device is responsive to a transient voltage at the input node to turn on the transistor, thereby shunting the transient voltage to the reference node. Preferably, the input node is coupled to a high speed data transmission line that operates below 5v and the reference node is coupled to ground and the transistor is an NPN transistor. The driver may preferably be a gate-drain connected MOS transistor with its gate-drain terminal coupled to the collector terminal of the transistor and its source terminal coupled to the base terminal of the transistor. Alternatively, the driver may be a light emitting diode (LED) or any other diode with a different material (band-gap) and die size than the LED, connected to the bipolar transistor to create a low voltage clamping device.

US Patent:

20060124959, Jun 15, 2006

Filed:

Nov 15, 2005

Appl. No.:

11/273609

Inventors:

George Templeton - Tempe AZ, US
James Washburn - Arlington VA, US

International Classification:

H01L 29/74

US Classification:

257157000

Abstract:

An over-voltage protection thyristor has reduced junction capacitance making it suitable for use in high bandwidth applications. The reduced capacitance is achieved through the introduction of a deep base region. The deep base region has a graded doping concentration which reduces with depth into the substrate. The thyristor is useful for protecting sensitive electrical equipment from transient surges.