Gerald C Banks

US Patent:

6339545, Jan 15, 2002

Filed:

Feb 28, 2001

Appl. No.:

09/794043

Inventors:

Gerald J. Banks - Fremont CA

Assignee:

BTG International Inc. - West Conshohocken PA

International Classification:

G11C 1300

US Classification:

36518503, 365201, 365207

Abstract:

An electrically alterable, non-volatile memory cell has more than two memory states that can be programmed selectively. Programming of the cell is conducted by applying a plurality of programming signals having different characteristics to the cell. The programming signals include at least a first programming signal which programs the cell by a first increment and a subsequent programming signal which programs the cell by a second increment smaller than the first increment. As the cell is being programmed to a selected state, its programming status is verified independently of reference values bounding the memory states. For this purpose, a signal indicative of the programming status (e. g. , the cells bit line signal) is compared with a reference signal corresponding to the selected state but having a value different from the reference value or values bounding the selected state. The programming operation can thus be controlled without actually reading the memory state of the cell.

US Patent:

6343034, Jan 29, 2002

Filed:

Jan 28, 2000

Appl. No.:

09/493140

Inventors:

Gerald J. Banks - Fremont CA

Assignee:

BTG International Inc. - West Conshohocken PA

International Classification:

G11C 700

US Classification:

36518901, 36523002

Abstract:

An electrically alterable, non-volatile memory cell has more than two memory states that can be programmed selectively. Programming of the cell is conducted by applying a plurality of programming signals having different characteristics to the cell. The programming signals include at least a first programming signal which programs the cell by a first increment and a subsequent programming signal which programs the cell by a second increment smaller than the first increment. As the cell is being programmed to a selected state, its programming status is verified independently of reference values bounding the memory states. For this purpose, a signal indicative of the programming status (e. g. , the cells bit line signal) is compared with a reference signal corresponding to the selected state but having a value different from the reference value or values bounding the selected state. The programming operation can thus be controlled without reading out the cell.

US Patent:

6344998, Feb 5, 2002

Filed:

Feb 28, 2001

Appl. No.:

09/794042

Inventors:

Gerald J. Banks - Fremont CA

Assignee:

BTG International Inc. - West Conshohocken PA

International Classification:

G11C 1300

US Classification:

36518522, 36518901, 36523001, 365233

Abstract:

An electrically alterable, non-volatile memory cell has more than two memory states that can be programmed selectively. Programming of the cell is conducted by applying a plurality of programming signals having different characteristics to the cell. The programming signals include at least a first programming signal which programs the cell by a first increment and a subsequent programming signal which programs the cell by a second increment smaller than the first increment. As the cell is being programmed to a selected state, its programming status is verified independently of reference values bounding the memory states. For this purpose, a signal indicative of the programming status (e. g. , the cells bit line signal) is compared with a reference signal corresponding to the selected state but having a value different from the reference value or values bounding the selected state. The programming operation can thus be controlled without actually reading the memory state of the cell.

US Patent:

6353554, Mar 5, 2002

Filed:

Dec 12, 2000

Appl. No.:

09/733937

Inventors:

Gerald J. Banks - Fremont CA

Assignee:

BTG International Inc. - West Conshohocken PA

International Classification:

G11C 0700

US Classification:

36518503, 36523001, 36523903

Abstract:

Memory states of a multi-bit memory cell are demarcated by generating read reference signals having levels that constitute boundaries of the memory states. The read reference signals are dependent upon the levels of programming reference signals used for controlling the programming of the memory cell. The memory cell can thus be programmed without reading out its memory state during the programming process, with programming margins being assured by the dependence of the read reference signals on the programming reference signals. Both sets of reference signals may be generated by reference cells which track variations in the operating characteristics of the memory cell with changes in conditions, such as temperature and system voltages, to enhance the reliability of memory programming and readout.

US Patent:

6356486, Mar 12, 2002

Filed:

Jun 5, 2000

Appl. No.:

09/586967

Inventors:

Gerald J. Banks - Fremont CA

Assignee:

BTG International Inc. - West Conshohocken PA

International Classification:

G11C 1300

US Classification:

36518901, 365 45, 3651851, 3651852, 365233

Abstract:

An electrically alterable, non-volatile memory cell has more than two memory states that can be programmed selectively. Programming of the cell is conducted by applying a plurality of programming signals having different characteristics to the cell. The programming signals include at least a first programming signals which programs the cell by a first increment and a subsequent programming signal which programs the cell by a second increment smaller than the first increment. As the cell is being programmed to a selected state, its programming status is verified independently of reference values bounding the memory states. For this purpose, a signal indicative of the programming status (e. g. , the cells bit line signal) is compared with a reference signal corresponding to the selected state but having a value different from the reference value or values bounding the selected state. The programming operation can thus be controlled without actually reading the memory state of the cell.

US Patent:

6381172, Apr 30, 2002

Filed:

Jun 29, 2001

Appl. No.:

09/894134

Inventors:

Gerald J. Banks - Fremont CA

Assignee:

BTG International Inc. - West Conshohocken PA

International Classification:

G11C 1300

US Classification:

36518503, 36518901, 36518907, 365168

Abstract:

Memory states of a multi-bit memory cell are demarcated by generating read reference signals having levels that constitute boundaries of the memory states. The read reference signals may be dependent upon the levels of programming reference signals used for controlling the programming of the memory cell. The memory cell can thus be programmed without reading out its memory state during the programming process, with programming margins being assured by the dependence of the read reference signals on the programming reference signals. Both sets of reference signals may be generated by reference cells which track variations in the operating characteristics of the memory cell with changes in conditions, such as temperature and system voltages, to enhance the reliability of memory programming and readout.

US Patent:

6404675, Jun 11, 2002

Filed:

Feb 28, 2001

Appl. No.:

09/794041

Inventors:

Gerald J. Banks - Fremont CA

Assignee:

BTG International Inc. - West Conshohocken PA

International Classification:

G11C 1604

US Classification:

36518503, 36518522, 365168

Abstract:

An electrically alterable, non-volatile memory cell has more than two memory states that can be programmed selectively. Programming of the cell is conducted by applying a plurality of programming signals having different characteristics to the cell. The programming signals include at least a first programming signal which programs the cell by a first increment and a subsequent programming signal which programs the cell by a second increment smaller than the first increment. As the cell is being programmed to a selected state, its programming status is verified independently of reference values bounding the memory states. For this purpose, a signal indicative of the programming status (e. g. , the cells bit line signal) is compared with a reference signal corresponding to the selected state but having a value different from the reference value or values bounding the selected state. The programming operation can thus be controlled without actually reading the memory state of the cell.

US Patent:

6434050, Aug 13, 2002

Filed:

Jun 29, 2001

Appl. No.:

09/893545

Inventors:

Gerald J. Banks - Fremont CA

Assignee:

BTG International Inc. - West Conshohocken PA

International Classification:

G11C 1606

US Classification:

3651852, 36518503, 36518522, 36518524

Abstract:

Memory states of a multi-bit memory cell are demarcated by generating read reference signals having levels that constitute boundaries of the memory states. The read reference signals may be dependent upon the levels of programming reference signals used for controlling the programming of the memory cell. The memory cell can thus be programmed without reading out its memory state during the programming process, with programming margins being assured by the dependence of the read reference signals on the programming reference signals. Both sets of reference signals may be generated by reference cells which track variations in the operating characteristics of the memory cell with changes in conditions, such as temperature and system voltages, to enhance the reliability of memory programming and readout.