Gerald Lynn Miller

US Patent:

60722118, Jun 6, 2000

Filed:

Aug 3, 1998

Appl. No.:

9/128022

Inventors:

Gerald R. Miller - Scottsdale AZ
Lakshminarayan Viswanathan - Phoenix AZ
Alan D. Wood - Mesa AZ

Assignee:

Motorola, Inc. - Schaumburg IL

International Classification:

H01L 27108
H01L 2976
H01L 2994
H01L 31119

US Classification:

257308

Abstract:

A semiconductor package (10) forms an impedance matching capacitor by utilizing an insulator (12), a conductor (19) on the dielectric, and a substrate (11) as elements of the capacitor. The capacitor is electrically connected, as part of an impedance matching network to shunt the inductance of the bonding wires (21) that connect the semiconductor die (18) an input lead (17).

US Patent:

D3722180, Jul 30, 1996

Filed:

Mar 20, 1995

Appl. No.:

D/036418

Inventors:

James S. Herzberg - Long Beach CA
Gerald D. Miller - Manhattan Beach CA

Assignee:

Rockwell International Corporation - Seal Beach CA

US Classification:

D12333

US Patent:

41097564, Aug 29, 1978

Filed:

Nov 17, 1976

Appl. No.:

5/742726

Inventors:

Gerald A. Miller - Fountain Valley CA
John M. Zabsky - Santa Ana CA

Assignee:

Dresser Industries, Inc. - Dallas TX

International Classification:

F01N 108

US Classification:

181266

Abstract:

A dissipative-type muffler for attenuating the high velocity discharge of a high pressure-high temperature safety valve. A path of flow constituting four stages of controlled turbulence suppressed diffusion is formed internally of the muffler extending from an intake into a plenum chamber then distributed past a plurality of parallel arranged radial diffuser flanges and an acoustical liner before exiting to atmosphere at relatively low velocity and low noise level. Laminar flow to small scale turbulence is obtained in the first stage by a jet impingement directional reversal in a controlled spacing discharge from an intake pipe within the plenum chamber. In the second stage, small scale discharge turbulence of high frequency is achieved by laminar flow induced via radial diffusion through controlled gap spacings between the diffuser flanges. Buffer plate impingement of the second stage discharge is then effected in the third stage after which high frequency noise attenuation by means of an acoustical composition is obtained in the fourth stage before exiting to atmosphere.

US Patent:

6072238, Jun 6, 2000

Filed:

Apr 7, 1999

Appl. No.:

9/287282

Inventors:

Lakshminarayan Viswanathan - Phoenix AZ
David F. Abdo - Scottsdale AZ
Gerald R. Miller - Scottsdale AZ

Assignee:

Motorola, Inc. - Schaumburg IL

International Classification:

H01L 2334

US Classification:

257719

Abstract:

A semiconductor device (10) suitable for use in RF applications and a method of forming the semiconductor device (10). An RF transistor die (31) is bonded to a heatsink (21). The heatsink (21) having the semiconductor chip (31) mounted thereto is coupled to a printed circuit board (11), wherein the RF transistor die (31) extends through an opening (14) in the printed circuit board (11). Conductors (18, 19) on the printed circuit board (11) are coupled to the semiconductor chip (31) via wirebonds (35, 36).

US Patent:

53113993, May 10, 1994

Filed:

Jun 24, 1992

Appl. No.:

7/903422

Inventors:

Felician A. Zell - Litchfield Park AZ
Gerald R. Miller - Scottsdale AZ

Assignee:

The Carborundum Company - Niagara Falls NY

International Classification:

H05K 720

US Classification:

361707

Abstract:

A microelectronic package comprising a ceramic substrate (22) having a first surface bonded to a metal heat sink (25) and a second surface (30) opposite said first surface and having at least one metallized island (32) bonded to a lead frame (26), wherein the island has a uniform pullback (35) of metallization from the edge (36) of the substrate.

US Patent:

62618687, Jul 17, 2001

Filed:

Apr 2, 1999

Appl. No.:

9/285827

Inventors:

Gerald R. Miller - Scottsdale AZ
Lakshminarayan Viswanathan - Phoenix AZ

Assignee:

Motorola, Inc. - Schaumburg IL

International Classification:

H01L 2144
H01L 2148
H01L 2150

US Classification:

438123

Abstract:

A method for packaging a semiconductor device (23) to form a semiconductor component (10). A die attach material (17) is disposed on a flange (11). A semiconductor chip (23) is bonded to the die attach material (17). After disposing the die attach material (17) on the flange (11), an insulator material (28) is coupled to the flange (11). A leadframe (32) is coupled to the semiconductor chip (23) via a plurality of wirebonds (36). The wirebonds (36) and the semiconductor chip (23) are protected by a lid (37).