Hyong Y. Lee - Beavercreek OH Belinda Johnson - Dayton OH Rocky Reston - Beavercreek OH Chris Ito - Colorado Springs CO Gerald Trombley - Centerville OH Charles Havasy - Beavercreek OH
Assignee:
The United States of America as represented by the Secretary of the Air Force - Washington DC
International Classification:
H01L 310256 H01L 2920
US Classification:
257192
Abstract:
The incorporation of an aluminum arsenide (AlAs) buffer layer in a gallium arsenide (GaAs) field effect transistor (FET) structure is found to improve the overall device performance, particularly in the high temperature operating regime. Similar characteristics may be obtained from devices fabricated with an Al. sub. x Ga. sub. 1-x As 0. 2. ltoreq. x. ltoreq. 1 barrier layer. At temperatures greater than 250. degree. C. , the semi-insulating gallium arsenide substrate begins to conduct significant amounts of current. The highly resistive AlAs buffer layer limits this increased conduction, thus permitting device operation at temperatures where parasitic leakage currents would impede or prevent device operation. Devices fabricated with AlAs buffer layers exhibited lower drain parasitic leakage currents and showed improved output conductance characteristics at 350. degree. C. ambient temperature.
Process For Improving Gallium Arsenide Field Effect Transistor Performance Using An Aluminum Arsenide Or An Aluminum Gallium Arsenide Buffer Layer
Hyong Y. Lee - Fairborn OH Belinda Johnson - Dayton OH Rocky Reston - Beavercreek OH Chris Ito - Colorado Springs CO Gerald Trombley - Centerville OH Charles Havasy - Beavercreek OH
Assignee:
The United States of America as represented by the Secretary of the Air Force - Washington DC
International Classification:
H01L 21338
US Classification:
437 40
Abstract:
The incorporation of an aluminum arsenide (AlAs) buffer layer in a gallium arsenide (GaAs) field effect transistor (FET) structure is found to improve the overall device performance, particularly in the high temperature operating regime. Similar characteristics may be obtained from devices fabricated with an Al. sub. x Ga. sub. 1-x As (0. 2. ltoreq. x. ltoreq. 1) barrier layer. At temperatures greater than 250. degree. C. , the semi-insulating gallium arsenide substrate begins to conduct significant amounts of current. The highly resistive AlAs buffer layer limits this increased conduction, thus permitting device operation at temperatures where parasitic leakage currents would impede or prevent device operation. Devices fabricated with AlAs buffer layers exhibited lower drain parasitic leakage currents and showed improved output conductance characteristics at 350. degree. C. ambient temperature.