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Gerald J Trombley

age ~66

from Centreville, VA

Also known as:
  • Gerald Trombley
Phone and address:
6706 White Post Rd, Centreville, VA 20121
(703)2661137

Gerald Trombley Phones & Addresses

  • 6706 White Post Rd, Centreville, VA 20121 • (703)2661137 • (703)8300497 • (703)8306337
  • 6797 Stone Maple Ter, Centreville, VA 20121 • (703)8300497
  • 80 Lynn Rae Cir, Dayton, OH 45458
  • 7359 Swan Point Way, Columbia, MD 21045 • (410)3816325
  • Chantilly, VA
  • Apex, NC
  • Oakland, MI
  • 6706 White Post Rd, Centreville, VA 20121

Work

  • Position:
    Military

Education

  • Degree:
    Associate degree or higher

Us Patents

  • Elevated Temperature Gallium Arsenide Field Effect Transistor With Aluminum Arsenide To Aluminum Gallium Arsenide Mole Fractioned Buffer Layer

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  • US Patent:
    55942628, Jan 14, 1997
  • Filed:
    Apr 7, 1995
  • Appl. No.:
    8/418747
  • Inventors:
    Hyong Y. Lee - Beavercreek OH
    Belinda Johnson - Dayton OH
    Rocky Reston - Beavercreek OH
    Chris Ito - Colorado Springs CO
    Gerald Trombley - Centerville OH
    Charles Havasy - Beavercreek OH
  • Assignee:
    The United States of America as represented by the Secretary of the Air
    Force - Washington DC
  • International Classification:
    H01L 310256
    H01L 2920
  • US Classification:
    257192
  • Abstract:
    The incorporation of an aluminum arsenide (AlAs) buffer layer in a gallium arsenide (GaAs) field effect transistor (FET) structure is found to improve the overall device performance, particularly in the high temperature operating regime. Similar characteristics may be obtained from devices fabricated with an Al. sub. x Ga. sub. 1-x As 0. 2. ltoreq. x. ltoreq. 1 barrier layer. At temperatures greater than 250. degree. C. , the semi-insulating gallium arsenide substrate begins to conduct significant amounts of current. The highly resistive AlAs buffer layer limits this increased conduction, thus permitting device operation at temperatures where parasitic leakage currents would impede or prevent device operation. Devices fabricated with AlAs buffer layers exhibited lower drain parasitic leakage currents and showed improved output conductance characteristics at 350. degree. C. ambient temperature.
  • Process For Improving Gallium Arsenide Field Effect Transistor Performance Using An Aluminum Arsenide Or An Aluminum Gallium Arsenide Buffer Layer

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  • US Patent:
    54119022, May 2, 1995
  • Filed:
    Jun 6, 1994
  • Appl. No.:
    8/254722
  • Inventors:
    Hyong Y. Lee - Fairborn OH
    Belinda Johnson - Dayton OH
    Rocky Reston - Beavercreek OH
    Chris Ito - Colorado Springs CO
    Gerald Trombley - Centerville OH
    Charles Havasy - Beavercreek OH
  • Assignee:
    The United States of America as represented by the Secretary of the Air
    Force - Washington DC
  • International Classification:
    H01L 21338
  • US Classification:
    437 40
  • Abstract:
    The incorporation of an aluminum arsenide (AlAs) buffer layer in a gallium arsenide (GaAs) field effect transistor (FET) structure is found to improve the overall device performance, particularly in the high temperature operating regime. Similar characteristics may be obtained from devices fabricated with an Al. sub. x Ga. sub. 1-x As (0. 2. ltoreq. x. ltoreq. 1) barrier layer. At temperatures greater than 250. degree. C. , the semi-insulating gallium arsenide substrate begins to conduct significant amounts of current. The highly resistive AlAs buffer layer limits this increased conduction, thus permitting device operation at temperatures where parasitic leakage currents would impede or prevent device operation. Devices fabricated with AlAs buffer layers exhibited lower drain parasitic leakage currents and showed improved output conductance characteristics at 350. degree. C. ambient temperature.

Classmates

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Northern Adirdack High Sc...

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Gerald J Trombley

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Myspace

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gerald trombley

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Locality:
brown town, Montana
Birthday:
1949
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Gerald Trombley's My Phot...

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