Geraldine D Schwartz

US Patent:

46750720, Jun 23, 1987

Filed:

Jun 25, 1986

Appl. No.:

6/878144

Inventors:

Reid S. Bennett - Wappingers Falls NY
Linda M. Ephrath - LaGrange NY
Geraldine C. Schwartz - Poughkeepsie NY
Gary S. Selwyn - Hopewell Junction NY

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 21306
B44C 122
C03C 1500
C23F 102

US Classification:

156626

Abstract:

Laser induced fluorescence is utilized to detect and control the reactive ion etch-through of a given layer in a wafer by detecting a large change in the concentration of a selected minor species from the wafer in the etching plasma. This selected minor species must be present in a significantly different concentration in the etched given layer compared to adjacent layers in the wafer in order to provide a proper endpoint detection. In one embodiment, when the large change in the selected minor species concentration is detected, then the RF electrodes for the reactor are automatically de-energized.

US Patent:

43964583, Aug 2, 1983

Filed:

Dec 21, 1981

Appl. No.:

6/333196

Inventors:

Valeria Platter - Poughkeepsie NY
Laura B. Rothman - South Kent CT
Paul M. Schaible - Poughkeepsie NY
Geraldine C. Schwartz - Poughkeepsie NY

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 21306
B44C 122
C03C 1500
C03C 2506

US Classification:

156643

Abstract:

Formation of planar conductor/insulator semiconductor devices utilizing hafnium coated aluminum based metallization with a magnesium oxide mask for dry etching of the metallization and deposition of planar insulation. The hafnium coating is used to protect the aluminum metallization during mask removal, and as a registration enhancer for subsequent electron-beam processing.

US Patent:

43671195, Jan 4, 1983

Filed:

Aug 18, 1980

Appl. No.:

6/179145

Inventors:

Joseph S. Logan - Poughkeepsie NY
John L. Mauer - Sherman CT
Laura B. Rothman - Sherman CT
Geraldine C. Schwartz - Poughkeepsie NY
Charles L. Standley - Wappingers Falls NY

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

B44C 122
C03C 1500
C03C 2506
C23F 102

US Classification:

156643

Abstract:

Use of a dual composite mask for a lift-off multi-layered structure process in which a base component layer acts as an etch stop for reactive ion etching of overlying layers.

US Patent:

56335229, May 27, 1997

Filed:

May 15, 1996

Appl. No.:

8/648457

Inventors:

Fernand Dorleans - Wappingers Falls NY
Louis L. C. Hsu - Fishkill NY
Gerald R. Larsen - Cornwall NY
Geraldine C. Schwartz - Poughkeepsie NY

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 2976
H01L 2994
H01L 31062
H01L 31113

US Classification:

257344

Abstract:

The present invention is directed to a unique silicon based MOS transistor having an inverse-T refractory metal gate structure. The gate fabricated according to this invention comprises a main CVD tungsten portion and a lower sputtered tungsten portion outwardly extending from the bottom of the CVD portion such that a cross section of the gate appears as an inverted "T". A Cl. sub. 2 /O. sub. 2 plasma etch is used to etch the CVD tungsten layer and a chemical etch is used to etch the sputtered tungsten layer to form the gate electrode. It has been discovered that sputtered tungsten is more resistant to Cl. sub. 2 /O. sub. 2 reactive ion etch than is CVD tungsten. The sputtered tungsten layer acts as a shield to protect the underlying gate oxide layer from ion damage throughout the fabrication process.

US Patent:

41325869, Jan 2, 1979

Filed:

Dec 20, 1977

Appl. No.:

5/862262

Inventors:

Paul M. Schaible - Poughkeepsie NY
Geraldine C. Schwartz - Poughkeepsie NY
Laura B. Zielinski - New Fairfield CT

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

C23F 102

US Classification:

156643

Abstract:

Magnesium oxide is deposited on a substrate as a mask with a pattern of openings which exposes a corresponding pattern of a surface of a substrate which is to be subjected to dry etching. In a specific application, the magnesium oxide mask is employed to delineate a conductor pattern on semiconductor substrates by dry etching.

US Patent:

43527167, Oct 5, 1982

Filed:

Dec 24, 1980

Appl. No.:

6/219645

Inventors:

Paul M. Schaible - Poughkeepsie NY
Geraldine C. Schwartz - Poughkeepsie NY

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

C23F 102

US Classification:

156643

Abstract:

The use of a molybdenum diffusion barrier between a copper layer and a magnesium oxide dry etch mask to obtain and insure adhesion between the two.

US Patent:

46019391, Jul 22, 1986

Filed:

Sep 20, 1983

Appl. No.:

6/534036

Inventors:

George S. Gati - Wappingers Falls NY
Albert P. Lee - Poughkeepsie NY
Geraldine C. Schwartz - Poughkeepsie NY
Charles L. Standley - Wappingers Falls NY

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

B32B 302

US Classification:

428161

Abstract:

A composite insulator structure separating adjacent layers of patterned metal on an LSI chip is disclosed. The bottom layer of sputtered oxide is thicker than the top layer and is preferably planarized. The top layer is conformal plasma nitride so as to uncover unwanted projections on the underlying metal and prevent interlevel shorting between the patterned layers.

US Patent:

44478240, May 8, 1984

Filed:

Sep 10, 1982

Appl. No.:

6/416437

Inventors:

Joseph S. Logan - Poughkeepsie NY
John L. Mauer - Sherman CT
Laura B. Rothman - Sherman CT
Geraldine C. Schwartz - Poughkeepsie NY
Charles L. Standley - Wappingers Falls NY

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 4348
H01L 2934
H01L 2944
H01L 2952

US Classification:

357 71

Abstract:

Use of a dual composite mask for a lift-off multi-layered structure process in which a base component layer acts as an etch stop for reactive ion etching of overlying layers.