Geraldine K Schwartz from Tampa, FL, age 73

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Author
Geraldine Schwartz

ISBN #
0774801646

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Location:

Greater New York City Area

Industry:

Public Relations and Communications

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Location:

Greater New York City Area

Industry:

Consumer Goods

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Location:

Greater New York City Area

Industry:

Law Practice

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Specialties:

Nursing (Registered Nurse)

Address:

5 Lighthouse Rd, Sands Point, NY 11050
(516)9446424 (Phone)

Languages:

English

Trench Etch Endpoint Detection By Lif
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US Patent:

46750720, Jun 23, 1987
Filed:

Jun 25, 1986
Appl. No.:

6/878144
Inventors:

Reid S. Bennett - Wappingers Falls NY
Linda M. Ephrath - LaGrange NY
Geraldine C. Schwartz - Poughkeepsie NY
Gary S. Selwyn - Hopewell Junction NY
Assignee:

International Business Machines Corporation - Armonk NY
International Classification:

H01L 21306
B44C 122
C03C 1500
C23F 102
US Classification:

156626
Abstract:

Laser induced fluorescence is utilized to detect and control the reactive ion etch-through of a given layer in a wafer by detecting a large change in the concentration of a selected minor species from the wafer in the etching plasma. This selected minor species must be present in a significantly different concentration in the etched given layer compared to adjacent layers in the wafer in order to provide a proper endpoint detection. In one embodiment, when the large change in the selected minor species concentration is detected, then the RF electrodes for the reactor are automatically de-energized.

Sicr Microfuses
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US Patent:

52850994, Feb 8, 1994
Filed:

Dec 15, 1992
Appl. No.:

7/990679
Inventors:

Roy A. Carruthers - Stormville NY
Fernand J. Dorleans - Wappinger Falls NY
John A. Fitzsimmons - Poughkeepsie NY
Richard Flitsch - Poughkeepsie NY
James A. Jubinsky - Clinton Corners NY
Gerald R. Larsen - Cornwall NY
Geraldine C. Schwartz - Poughkeepsie NY
Paul J. Tsang - Poughkeepsie NY
Robert W. Zielinski - Wappinger Falls NY
Assignee:

International Business Machines Corporation - Armonk NY
International Classification:

H01L 2702
H01L
H01L 2946
US Classification:

257529
Abstract:

A SiCr microfuse, deletable either by electrical voltage pulses or by laser pulses, for rerouting the various components in an integrated circuit, as where redundancy in array structures is implemented, and the method of fabricating same, at any wiring level of the chip, by utilizing a direct resist masking of the SiCr fuse layer to eliminate problems of mask damage and residual metal adjacent the fuse.

Cmos Transistor With Two-Layer Inverse-T Tungsten Gate
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US Patent:

56335229, May 27, 1997
Filed:

May 15, 1996
Appl. No.:

8/648457
Inventors:

Fernand Dorleans - Wappingers Falls NY
Louis L. C. Hsu - Fishkill NY
Gerald R. Larsen - Cornwall NY
Geraldine C. Schwartz - Poughkeepsie NY
Assignee:

International Business Machines Corporation - Armonk NY
International Classification:

H01L 2976
H01L 2994
H01L 31062
H01L 31113
US Classification:

257344
Abstract:

The present invention is directed to a unique silicon based MOS transistor having an inverse-T refractory metal gate structure. The gate fabricated according to this invention comprises a main CVD tungsten portion and a lower sputtered tungsten portion outwardly extending from the bottom of the CVD portion such that a cross section of the gate appears as an inverted "T". A Cl. sub. 2 /O. sub. 2 plasma etch is used to etch the CVD tungsten layer and a chemical etch is used to etch the sputtered tungsten layer to form the gate electrode. It has been discovered that sputtered tungsten is more resistant to Cl. sub. 2 /O. sub. 2 reactive ion etch than is CVD tungsten. The sputtered tungsten layer acts as a shield to protect the underlying gate oxide layer from ion damage throughout the fabrication process.

Composite Insulator Structure
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US Patent:

46019391, Jul 22, 1986
Filed:

Sep 20, 1983
Appl. No.:

6/534036
Inventors:

George S. Gati - Wappingers Falls NY
Albert P. Lee - Poughkeepsie NY
Geraldine C. Schwartz - Poughkeepsie NY
Charles L. Standley - Wappingers Falls NY
Assignee:

International Business Machines Corporation - Armonk NY
International Classification:

B32B 302
US Classification:

428161
Abstract:

A composite insulator structure separating adjacent layers of patterned metal on an LSI chip is disclosed. The bottom layer of sputtered oxide is thicker than the top layer and is preferably planarized. The top layer is conformal plasma nitride so as to uncover unwanted projections on the underlying metal and prevent interlevel shorting between the patterned layers.

Method For Fabricating A Mos Transistor With Two-Layer Inverse-T Tungsten Gate Structure
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US Patent:

55997252, Feb 4, 1997
Filed:

Nov 22, 1994
Appl. No.:

8/346210
Inventors:

Fernand Dorleans - Wappingers Falls NY
Louis L. C. Hsu - Fishkill NY
Gerald R. Larsen - Cornwall NY
Geraldine C. Schwartz - Poughkeepsie NY
Assignee:

International Business Machines Corporation - Armonk NY
International Classification:

H01L 218234
US Classification:

437 40
Abstract:

The present invention is directed to a unique method for fabricating a silicon based MOS transistor having an inverse-T refractory metal gate structure. The gate fabricated according to this invention comprises a main CVD tungsten portion and a lower sputtered tungsten portion outwardly extending from the bottom of the CVD portion such that a cross section of the gate appears as an inverted "T". A Cl. sub. 2 /O. sub. 2 plasma etch is used to etch the CVD tungsten layer and a chemical etch is used to etch the sputtered tungsten layer to form the gate electrode. It has been discovered that sputtered tungsten is more resistant to Cl. sub. 2 /O. sub. 2 reactive ion etch than is CVD tungsten. The sputtered tungsten layer acts as a shield to protect the underlying gate oxide layer from ion damage throughout the fabrication process.

Structure And Fabrication Of Sicr Microfuses
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US Patent:

53407750, Aug 23, 1994
Filed:

Nov 9, 1993
Appl. No.:

8/149250
Inventors:

Roy A. Carruthers - Stormville NY
Fernand J. Dorleans - Wappinger Falls NY
John A. Fitzsimmons - Poughkeepsie NY
Richard Flitsch - Poughkeepsie NY
James A. Jubinsky - Clinton Corners NY
Gerald R. Larsen - Cornwall NY
Geraldine C. Schwartz - Poughkeepsie NY
Paul J. Tsang - Poughkeepsie NY
Robert W. Zielinski - Wappinger Falls NY
Assignee:

International Business Machines Corporation - Armonk NY
International Classification:

H01L 21465
US Classification:

437246
Abstract:

A SiCr microfuse, deletable either by electrical voltage pulses or by laser pulses, for rerouting the various components in an integrated circuit, as where redundancy in array structures is implemented, and the method of fabricating same, at any wiring level of the chip, by utilizing a direct resist masking of the SiCr fuse layer to eliminate problems of mask damage and residual metal adjacent the fuse.