Gilbert O Carrasquillo

age ~67

from Hackensack, NJ

Get Report

Also known as:

Gilberto G Carrasquillo
Gilbert L Carrasquillo
Gilbert Carraquillo
Gabriel Carrasquillo
Gilbert Carasquillo
Gilberto O Carrasquill
Carrasquillo Gilbert

Connected to:

Gilbert Carrasquillo Phones & Addresses

Hackensack, NJ
316 Partridge Run, Mountainside, NJ 07092 • (908)3891713
Piscataway, NJ
Dorchester, MA
North Brunswick, NJ
316 Partridge Run, Mountainside, NJ 07092 • (856)9832290

Work

Position:

Clerical/White Collar

Education

Degree:

Graduate or professional degree

Resumes

Photographer

view source

Location:

316 Partridge Run, Mountainside, NJ 07092

Industry:

Photography

Work:

Getty Images
Photographer
Splash News
Contributing Photographer and Videographer
Gc Media
Owner

Education:

University of Notre Dame
University of Hawaii at Manoa

Skills:

Photojournalism
Editorial
Image Editing
Magazines
Commercial Photography
Celebrity
Fashion
Event Photography
Photos
Photography
Digital Photography
Fine Art Photography
Photoshop
Video
Mac
Lightroom
Lifestyle Photography
Sports Photography
Fashion Photography
Nikon
Adobe Creative Suite
Portraits
Location Photography
Photo Editing
Black and White
Still Life
Reportage
Styling
Travel Photography
Studio Lighting
Breaking News
Photo Editor
Celebrity Photography
Street Photography

Interests:

Politics
Poverty Alleviation
Science and Technology
Human Rights
Arts and Culture

Languages:

Spanish
Italian
Bulgarian
Portuguese
English
Catalan

Materials Lab Manager

view source

Location:

Mountainside, NJ

Industry:

Glass, Ceramics, & Concrete

Work:

Morgan Tecnical Ceramics-Certech
Materials Lab Manager

Us Patents

Super Tough Monolithic Silicon Nitride
view source
US Patent:

51008475, Mar 31, 1992
Filed:

Sep 17, 1991
Appl. No.:

7/759970
Inventors:

Chien-Wei Li - Livingston NJ
Jean Yamanis - Morristown NJ
Gilbert Carrasquillo - Piscataway NJ
Assignee:

Allied-Signal Inc. - Morris Township, Morris County NJ
International Classification:

C04B 3558
US Classification:

501 97
Abstract:

A monolithic silicon nitride ceramic is densified at temperatures lower than 2000. degree. C. and heat treated at temperatures greater than 2000. degree. C. in the presence of at least 6. 5 w % of multi-component sintering aids. This monolithic silicon nitride has a highly acicular microstructure Chevron Notch fracture toughness greater than 9 MPa. multidot. m. sup. 1/2, R-curve behavior, high Weibull modulus, excellent damage tolerance, high thermal conductivity, and other desirable properties.