Gregory L Horner

US Patent:

8278937, Oct 2, 2012

Filed:

Feb 8, 2010

Appl. No.:

12/658489

Inventors:

Leonid A. Vasilyev - Beaverton OR, US
John M. Schmidt - Oakland CA, US
James E. Hudson - Portland OR, US
Gregory S. Horner - Felton CA, US

Assignee:

Tau Science Corporation - Felton CA

International Classification:

G01R 31/02

US Classification:

324537, 324555

Abstract:

The current invention provides a shunt defect detection device that includes a device under test (DUT) that is fixedly held by a thermally isolating mount, a power source disposed to provide a directional bias condition to the DUT, a probe disposed to provide a localized power to the DUT from the power source, an emission detector disposed to measure a temporal emission from the DUT when in the directional bias condition, where the measured temporal emission is output as temporal data from the emission detector to a suitably programmed computer that uses the temporal data to determine a heating rate of the DUT and is disposed to estimate an overheat risk level of the DUT, where an output from the computer designates the DUT a pass status, an uncertain status, a fail status or a process to bin status according to the overheat risk level.

US Patent:

20150084664, Mar 26, 2015

Filed:

Dec 5, 2014

Appl. No.:

14/561667

Inventors:

- Hillsboro OR, US
Gregory S. Horner - Hillsboro OR, US
Leonid A. Vasilyev - Beaverton OR, US
James E. Hudson - Portland OR, US
Kyle Lu - Tigard OR, US

International Classification:

G01R 31/265
G01R 31/40
G01R 31/26

US Classification:

32476101

Abstract:

A method of quantum efficiency (QE) photovoltaic measurement is provided that includes coupling measurement electronics to a p-n junction of a Cell Under Test (CUT) that are capable of measuring a pulsed DC photocurrent. The measurement electronics output a response by the CUT to turning on and turning off the pulsed DC photocurrent that are digitized and analyzed for the magnitude that is representative of a conversion efficiency of the CUT to a wavelength of the DC photocurrent, where a measured decay time represents the p-n junction or the minority carrier lifetime. The CUT is exposed to the pulsed DC photocurrent, where signatures of the response to turning off and on to the pulsed DC photocurrent overlap, where a combined amplitude of the response is proportional to an efficiency of a production of photocarriers, where a value of a spectral response at a wavelength is determined.