Gregory M Bartlett

US Patent:

7648579, Jan 19, 2010

Filed:

Feb 11, 2005

Appl. No.:

11/057111

Inventors:

Matt G. Goodman - Chandler AZ, US
Ravinder Aggarwal - Gilbert AZ, US
Mike Halpin - Scottsdale AZ, US
Tony Keeton - Mesa AZ, US
Mark Hawkins - Gilbert AZ, US
Lee Haen - Phoenix AZ, US
Armand Ferro - Phoenix AZ, US
Paul Brabant - Phoenix AZ, US
Robert Vyne - Gilbert AZ, US
Gregory M. Bartlett - Chandler AZ, US
Joseph P. Italiano - Phoenix AZ, US
Bob Haro - Gilbert AZ, US

Assignee:

ASM America, Inc. - Phoenix AZ

International Classification:

C23C 16/458
C23C 16/00
H01L 21/306

US Classification:

118730, 118715, 118725, 118728, 118500, 15634533, 15634551, 15634552, 15634554

Abstract:

A substrate support system comprises a substrate holder having a plurality of passages extending between top and bottom surfaces thereof. The substrate holder supports a peripheral portion of the substrate backside so that a thin gap is formed between the substrate and the substrate holder. A hollow support member provides support to an underside of, and is configured to convey gas upward into one or more of the passages of, the substrate holder. The upwardly conveyed gas flows into the gap between the substrate and the substrate holder. Depending upon the embodiment, the gas then flows either outward and upward around the substrate edge (to inhibit backside deposition of reactant gases above the substrate) or downward through passages of the substrate holder, if any, that do not lead back into the hollow support member (to inhibit autodoping by sweeping out-diffused dopant atoms away from the substrate backside).

US Patent:

8047706, Nov 1, 2011

Filed:

Nov 18, 2008

Appl. No.:

12/273440

Inventors:

Matthew G. Goodman - Chandler AZ, US
Mark Hawkins - Gilbert AZ, US
Ravinder Aggarwal - Gilbert AZ, US
Michael Givens - Phoenix AZ, US
Eric Hill - Goodyear AZ, US
Gregory Bartlett - Chandler AZ, US

Assignee:

ASM America, Inc. - Phoenix AZ

International Classification:

G01K 15/00

US Classification:

374 1, 374102, 374178, 702 99, 438 14, 32475002

Abstract:

Methods and systems for calibrating a temperature control system in a vapor deposition chamber. A temperature sensor senses temperature within a semiconductor processing chamber and generates an output signal. A temperature control system controls a chamber temperature by controlling a heating apparatus based on the output signal. A method includes instructing the control system to target a setpoint temperature, and depositing a layer of material onto a surface in the chamber by a vapor deposition process. A variation of a property of the layer is measured while depositing the layer, the property known to vary cyclically as a thickness of the layer increases. The measured property is allowed to vary cyclically for one or more cycles. If there is a difference between a time period of one or more of the cycles and an expected time period associated with the setpoint temperature, the temperature control system is adjusted based on the difference.

US Patent:

8088225, Jan 3, 2012

Filed:

Dec 18, 2009

Appl. No.:

12/641712

Inventors:

Matt G. Goodman - Chandler AZ, US
Ravinder Aggarwal - Gilbert AZ, US
Mike Halpin - Scottsdale AZ, US
Tony Keeton - Mesa AZ, US
Mark Hawkins - Gilbert AZ, US
Lee Haen - Phoenix AZ, US
Armand Ferro - Phoenix AZ, US
Paul Brabant - Phoenix AZ, US
Robert Vyne - Gilbert AZ, US
Gregory M. Bartlett - Chandler AZ, US
Joseph P. Italiano - Phoenix AZ, US
Bob Haro - Gilbert AZ, US

Assignee:

ASM America, Inc. - Phoenix AZ

International Classification:

C23C 16/458
C23C 16/00
H01L 21/306

US Classification:

118730, 118715, 118725, 118728, 118500, 15634533, 15634534, 15634552, 15634554

Abstract:

A substrate support system comprises a substrate holder having a plurality of passages extending between top and bottom surfaces thereof. The substrate holder supports a peripheral portion of the substrate backside so that a thin gap is formed between the substrate and the substrate holder. A hollow support member provides support to an underside of, and is configured to convey gas upward into one or more of the passages of, the substrate holder. The upwardly conveyed gas flows into the gap between the substrate and the substrate holder. Depending upon the embodiment, the gas then flows either outward and upward around the substrate edge (to inhibit backside deposition of reactant gases above the substrate) or downward through passages of the substrate holder, if any, that do not lead back into the hollow support member (to inhibit autodoping by sweeping out-diffused dopant atoms away from the substrate backside).

US Patent:

20130029496, Jan 31, 2013

Filed:

Jul 29, 2011

Appl. No.:

13/194799

Inventors:

Matthias Bauer - Phoenix AZ, US
Gregory M. Bartlett - Chandler AZ, US

International Classification:

H01L 21/302
H01L 21/3065

US Classification:

438758, 15634526, 257E21214

Abstract:

A gas panel according to various aspects of the present invention is configured to deliver a constant flow rate of gases to a reaction chamber during a deposition process step. In one embodiment, the gas panel comprises a deposition sub-panel having a deposition injection line, a deposition vent line, and at least one deposition process gas line. The deposition injection line supplies a mass flow rate of a carrier gas to a reactor chamber. Each deposition process gas line may include a pair of switching valves that are configured to selectively direct a deposition process gas to the reactor chamber or a vent line. The deposition vent line also includes a switching valve configured to selectively direct a second mass flow rate of the carrier gas that is equal to the sum of the mass flow rate for all of the deposition process gases to the reactor chamber or a vent line. The gas panel is configured to substitute the mass flow rate of the deposition vent line with the mass flow rate of the deposition process lines, such that when the deposition vent line is directed to the reactor chamber the deposition process lines are directed to the vent line and when the deposition vent line is directed to the vent line the deposition process lines are directed to the reactor chamber. The substitution of the two mass flow rates maintains a constant mass flow rate of gases to the reactor chamber throughout the deposition process step.

US Patent:

20140060147, Mar 6, 2014

Filed:

Aug 28, 2012

Appl. No.:

13/597043

Inventors:

Michael Christopher Sarin - Phoenix AZ, US
Rafael Mendez - Phoenix AZ, US
Gregory Bartlett - Phoenix AZ, US
Eric Hill - Phoenix AZ, US
Keith R. Lawson - Phoenix AZ, US
Andy Rosser - Bristol, GB

Assignee:

ASM IP Holding B.V. - Almere

International Classification:

G01F 25/00
F17D 1/00

US Classification:

73 116, 137 2, 137455

Abstract:

A method and system are disclosed for verifying the flow rate of gas through a mass flow controller, such as a mass flow controller used with a tool for semiconductor or solar cell fabrication. To verify the mass flow rate measured by the mass flow controller, gas passing through the mass flow controller is also passed through a mass flow meter. The measured flow rate through the mass flow controller is compared to the measured flow rate through the mass flow meter and any difference between the two measured flow rates is determined. Depending upon the magnitude of any difference, the flow of gas to the mass flow controller may be altered.

US Patent:

20210310125, Oct 7, 2021

Filed:

Jun 18, 2021

Appl. No.:

17/352011

Inventors:

- Almere, NL
Junwei Su - Tempe AZ, US
Alexandros Demos - Scottsdale AZ, US
Xing Lin - Chandler AZ, US
Sam Kim - Chandler AZ, US
Gregory Michael Bartlett - Phoenix AZ, US

International Classification:

C23C 16/52
C23C 16/455
B01J 4/00
C23C 16/44
H01J 37/32

Abstract:

A gas injection system, a reactor system including the gas injection system, and methods of using the gas injection system and reactor system are disclosed. The gas injection system can be used in gas-phase reactor systems to independently monitor and control gas flow rates in a plurality of channels of a gas injection system coupled to a reaction chamber.

US Patent:

20200040458, Feb 6, 2020

Filed:

Aug 6, 2018

Appl. No.:

16/055532

Inventors:

- Almere, NL
Junwei Su - Tempe AZ, US
Alexandros Demos - Scottsdale AZ, US
Xing Lin - Chandler AZ, US
Sam Kim - Chandler AZ, US
Gregory Michael Bartlett - Phoenix AZ, US

International Classification:

C23C 16/52
C23C 16/455
C23C 16/44
H01J 37/32
B01J 4/00

Abstract:

A gas injection system, a reactor system including the gas injection system, and methods of using the gas injection system and reactor system are disclosed. The gas injection system can be used in gas-phase reactor systems to independently monitor and control gas flow rates in a plurality of channels of a gas injection system coupled to a reaction chamber.

US Patent:

20180151358, May 31, 2018

Filed:

Jan 5, 2018

Appl. No.:

15/863340

Inventors:

- Almere, NL
John Tolle - Gilbert AZ, US
Gregory Bartlett - Phoenix AZ, US
Nupur Bhargava - Phoenix AZ, US

International Classification:

H01L 21/02
C23C 16/455
C23C 16/24

Abstract:

A gas distribution system is disclosed in order to obtain better film uniformity on a substrate in a cross-flow reactor. The better film uniformity may be achieved by an asymmetric bias on individual injection ports of the gas distribution system. The gas distribution may allow for varied tunability of the film properties.