Gregory Lewis Whiting

US Patent:

8040609, Oct 18, 2011

Filed:

Nov 29, 2010

Appl. No.:

12/955743

Inventors:

Philipp H. Schmaelzle - Los Altos CA, US
Gregory L. Whiting - Mountain View CA, US
Joerg Martini - San Francisco CA, US
David K. Fork - Mountain View CA, US
Patrick Y. Maeda - Mountain View CA, US

Assignee:

Palo Alto Research Center Incorporated - Palo Alto CA

International Classification:

F24J 2/00
F24J 2/46
H02N 6/00

US Classification:

359591, 136246, 136 89, 356415, 356432, 356445, 356446, 126589, 126585

Abstract:

A self-adjusting solar light transmission (daylighting) apparatus includes a sunlight concentrating member (e. g. , a lens array) for concentrating direct sunlight in focal zone regions disposed inside a sheet containing an evenly-distributed stimuli-responsive material (SRM) that has a relatively high transparency state in the absence of concentrated sunlight, and changes to a relatively opaque (light scattering or absorbing) state in small portions located in the focal zone regions in response to concentrated direct sunlight. Thereby, 80% or more of direct sunlight is prevented from passing through the apparatus, but 80% or more of diffuse light is passed. The outer sheet surfaces are locally parallel (e. g. , planar) such that sunlight scattered by the light-scattering SRM portions is transmitted by total internal reflection through the remaining transparent sheet material, and outcoupled to one or more optional solar energy absorbing structures (e. g. , heatsinks or PV cells) disposed along the peripheral edge of the sheet.

US Patent:

8053818, Nov 8, 2011

Filed:

Dec 18, 2009

Appl. No.:

12/642132

Inventors:

Sanjiv Sambandan - Sunnyvale CA, US
Ana Claudia Arias - Los Gatos CA, US
Gregory Lewis Whiting - Menlo Park CA, US

Assignee:

Palo Alto Research Center Incorporated - Palo Alto CA

International Classification:

H01L 27/148
H01L 21/3205

US Classification:

257250, 438588

Abstract:

A thin film field effect transistor is disclosed which provides improved time-based channel stability. The field effect transistor includes first and second disordered semiconductor layers separated by an insulator. In an embodiment a carrier injection terminal is provided in a thin semiconductor layer closest to the gate terminal. An electric field is established in the thin semiconductor layer. At sufficient field strength, the electric field extends into the second semiconductor layer, which is in contact with the source and drain terminals. At sufficient field strength a channel is established in the second semiconductor layer, permitting current to flow between source and drain terminals. Above a certain gate voltage, there is sufficient free charge is induced in the first semiconductor layer so that the field does not extend into the second semiconductor, effectively shutting off current between source and drain. Single-device transition detection (as well as other applications) may be obtained.

US Patent:

8089065, Jan 3, 2012

Filed:

Apr 3, 2008

Appl. No.:

12/529286

Inventors:

Gregory Whiting - Menlo Park CA, US
Jonathan Halls - Cambridge, GB

Assignee:

Cambridge Display Technology Limited - Cambridgeshire

International Classification:

H01L 35/24

US Classification:

257 40, 257 49, 257 66

Abstract:

A method of forming an organic thin film transistor comprising: providing a structure comprising source and drain electrodes with a channel region therebetween, a gate electrode, and a dielectric layer disposed between the source and drain electrodes and the gate electrode; and patterning the dielectric layer using the source and drain electrodes as a mask to form a region of dielectric material in the channel region which is thinner than regions of dielectric material adjacent the channel region.

US Patent:

8164122, Apr 24, 2012

Filed:

Sep 21, 2011

Appl. No.:

13/239078

Inventors:

Sanjiv Sambandan - Sunnyvale CA, US
Ana Claudia Arias - Los Gatos CA, US
Gregory Lewis Whiting - Menlo Park CA, US

Assignee:

Palo Alto Research Center Incorporated - Palo Alto CA

International Classification:

H01L 27/148
H01L 21/3205

US Classification:

257250, 438588

Abstract:

A thin film field effect transistor is disclosed which provides improved time-based channel stability. The field effect transistor includes first and second disordered semiconductor layers separated by an insulator. In an embodiment a carrier injection terminal is provided in a thin semiconductor layer closest to the gate terminal. An electric field is established in the thin semiconductor layer. At sufficient field strength, the electric field extends into the second semiconductor layer, which is in contact with the source and drain terminals. At sufficient field strength a channel is established in the second semiconductor layer, permitting current to flow between source and drain terminals. Above a certain gate voltage, there is sufficient free charge is induced in the first semiconductor layer so that the field does not extend into the second semiconductor, effectively shutting off current between source and drain. Single-device transition detection (as well as other applications) may be obtained.

US Patent:

8288799, Oct 16, 2012

Filed:

Mar 21, 2012

Appl. No.:

13/426518

Inventors:

Sanjiv Sambandan - Sunnyvale CA, US
Ana Claudia Arias - Los Gatos CA, US
Gregory Lewis Whiting - Menlo Park CA, US

Assignee:

Palo Alto Research Center Incorporated - Palo Alto CA

International Classification:

H01L 27/148
H01L 21/3205

US Classification:

257250, 438588

Abstract:

A thin film field effect transistor is disclosed which provides improved time-based channel stability. The field effect transistor includes first and second disordered semiconductor layers separated by an insulator. In an embodiment a carrier injection terminal is provided in a thin semiconductor layer closest to the gate terminal. An electric field is established in the thin semiconductor layer. At sufficient field strength, the electric field extends into the second semiconductor layer, which is in contact with the source and drain terminals. At sufficient field strength a channel is established in the second semiconductor layer, permitting current to flow between source and drain terminals. Above a certain gate voltage, there is sufficient free charge is induced in the first semiconductor layer so that the field does not extend into the second semiconductor, effectively shutting off current between source and drain. Single-device transition detection (as well as other applications) may be obtained.

US Patent:

8394665, Mar 12, 2013

Filed:

Jun 13, 2008

Appl. No.:

12/664015

Inventors:

Sadayoshi Hotta - Osaka, JP
Jonathan Halls - Cambridge, GB
Gregory Whiting - Menlo Park CA, US

Assignee:

Cambridge Display Technology Limited - Cambridgeshire
Panasonic Corporation - Osaka

International Classification:

H01L 51/40

US Classification:

438 99, 257 40, 257E21007

Abstract:

A method of manufacturing an organic thin film transistor, the method comprising: depositing a source and drain electrode; forming a thin self-assembled layer of material on the source and drain electrodes, the thin self-assembled layer of material comprising a dopant moiety for chemically doping an organic semi-conductive material by accepting or donating charge and a separate attachment moiety bonded to the dopant moiety and selectively bonded to the source and drain electrodes; and depositing a solution comprising a solvent and an organic semi-conductive material in a channel region between the source and drain electrode.

US Patent:

8430705, Apr 30, 2013

Filed:

Nov 8, 2011

Appl. No.:

13/291593

Inventors:

Sanjiv Sambandan - Bangalore, IN
John E. Northrup - Palo Alto CA, US
Gregory L. Whiting - Menlo Park CA, US
Robert A. Street - Palo Alto CA, US

Assignee:

Palo Alto Research Center Incorporated - Palo Alto CA

International Classification:

H01J 1/62
H01J 63/04
H01J 9/00

US Classification:

445 50, 445 1, 445 49, 445 46, 313495

Abstract:

A first side has a first surface on which is located a material, at least a portion of which is to be formed into at least one tip. A second side has a second surface which is heated. At least one of the first and second surfaces being moved so material located on the first surface comes into physical contact with the second surface. Then at least one of the first side and the second side are moved, wherein the physical contact between the material and the second surface is maintained, causing the material to stretch between the second surface and the first surface, generating at least one capillary bridge. Movement is continued until the physical contact between the material and the second surface is broken resulting in the formation of at least one sharp conductive tip.

US Patent:

8450142, May 28, 2013

Filed:

Apr 3, 2008

Appl. No.:

12/532629

Inventors:

Sadayoshi Hotta - Osaka, JP
Jeremy Henley Burroughes - Cambridge, GB
Gregory Lewis Whiting - Menlo Park CA, US

Assignee:

Cambridge Display Technology Limited - Cambridgeshire
Panasonic Corporation - Kadoma-Shi, Osaka

International Classification:

H01L 51/10
H01L 51/40
H01L 21/336
H01L 29/786

US Classification:

438 99, 257E51006, 257E29273, 257E21411, 438151

Abstract:

An organic thin film transistor comprising: a substrate; a source electrode and a drain electrode defining a channel; a layer of insulating material disposed over the source and drain electrodes; a layer of organic semi-conductive material extending across the channel; a layer of dielectric material; and a gate electrode disposed over the layer of dielectric material.